公开(公告)号：US20060076510A1

公开(公告)日：2006-04-13

申请号：US10960904

申请日：2004-10-07

申请人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

发明人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30461 ,  H01J2237/31703

摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

摘要翻译： 公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。 此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能 横跨许多设置。

公开(公告)号：US07547460B2

公开(公告)日：2009-06-16

申请号：US09950939

申请日：2001-09-12

申请人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

发明人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

IPC分类号： C23C14/54 ,  C23C14/48

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J2237/3045

摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

摘要翻译： 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。 根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用 在第二次植入过程中调用扫描波形。

公开(公告)号：US20050133728A1

公开(公告)日：2005-06-23

申请号：US10744250

申请日：2003-12-22

申请人： Tamer Onat ,  Rajen Sud ,  Gregory Gibilaro ,  Joseph Dzengeleski

发明人： Tamer Onat ,  Rajen Sud ,  Gregory Gibilaro ,  Joseph Dzengeleski

IPC分类号： H01J3/14 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

摘要： A systematic in-situ analysis is provided for ensuring that a uniform and accurate ion implantation dose for workpieces is being realized. Prior to implantation the system determines whether the calibration of a dose controller is within predetermined tolerance values. If the dose controller is outside of these values, the implantation process is halted so that the calibration can be remedied without further damaging any workpieces by mis-dosing.

摘要翻译： 提供了系统的原位分析，用于确保正在实现工件的均匀和准确的离子注入剂量。 在植入之前，系统确定剂量控制器的校准是否在预定的容许值内。 如果剂量控制器在这些值之外，则停止注入过程，以便可以纠正校准，而不会通过误配来进一步损坏任何工件。