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    Ion beam implant current, spot width and position tuning
    1.
    发明申请
    Ion beam implant current, spot width and position tuning 有权
    离子束注入电流，光斑宽度和位置调整

    公开(公告)号：US20060076510A1

    公开(公告)日：2006-04-13

    申请号：US10960904

    申请日：2004-10-07

    申请人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

    发明人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30461 ,  H01J2237/31703

    摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

    摘要翻译： 公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。 此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能 横跨许多设置。

    Ion implanter optimizer scan waveform retention and recovery
    2.
    发明授权
    Ion implanter optimizer scan waveform retention and recovery 有权
    离子注入机优化器扫描波形保留和恢复

    公开(公告)号：US07547460B2

    公开(公告)日：2009-06-16

    申请号：US09950939

    申请日：2001-09-12

    申请人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

    发明人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

    IPC分类号： C23C14/54 ,  C23C14/48

    CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J2237/3045

    摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

    摘要翻译： 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。 根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用 在第二次植入过程中调用扫描波形。

    Ion beam contamination determination
    3.
    发明申请
    Ion beam contamination determination 有权
    离子束污染测定

    公开(公告)号：US20070241276A1

    公开(公告)日：2007-10-18

    申请号：US11289885

    申请日：2005-11-30

    申请人： Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

    发明人： Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

    IPC分类号： B01D59/44

    CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/31705 ,  H01L22/12

    摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

    摘要翻译： 公开了一种用于确定离子束污染的系统，方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量 测量的第三离子，与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

    Methods and apparatus for ion beam angle measurement in two dimensions
    7.
    发明申请
    Methods and apparatus for ion beam angle measurement in two dimensions 有权
    二维离子束角度测量的方法和装置

    公开(公告)号：US20060219936A1

    公开(公告)日：2006-10-05

    申请号：US11099119

    申请日：2005-04-05

    申请人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

    发明人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

    IPC分类号： G01K1/08 ,  H01J3/14

    CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31701

    摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.

    摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记拦截至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并产生具有代表第一特征的第一信号分量和表示第二特征的第二信号分量的传感器信号。 标志的第一和第二信号分量和对应的位置代表垂直于平移路径的方向上离子束的角度。 感测装置可以是束电流传感器的二维阵列。 该系统可以提供水平和垂直波束角度的测量，同时仅在一个方向上翻译标志。

    Ion implant ion beam parallelism and direction integrity determination and adjusting
    9.
    发明申请
    Ion implant ion beam parallelism and direction integrity determination and adjusting 审中-公开
    离子注入离子束平行度和方向完整性确定和调整

    公开(公告)号：US20060169922A1

    公开(公告)日：2006-08-03

    申请号：US11246410

    申请日：2005-10-07

    申请人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

    发明人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/244 ,  H01J2237/31703

    摘要： A system, method and program product for controlling parallelism and/or direction integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes multiple faraday cups to measure a profile of at least a portion of the ion beam. The results of the measurement are then processed to determine parallelism and/or direction integrity of the ion beam. The results of the parallelism and/or direction integrity determination are then used to adjust the ion implanter system operating parameters to control parallelism and the direction of the ion beam.

    摘要翻译： 公开了一种用于控制由离子注入机系统产生的离子束的并行性和/或方向完整性的系统，方法和程序产品。 本发明利用多个法拉第杯来测量离子束的至少一部分的轮廓。 然后处理测量结果以确定离子束的平行度和/或方向完整性。 然后使用平行度和/或方向完整性确定的结果来调整离子注入系统的操作参数以控制离子束的平行度和方向。

    WEAKENING FOCUSING EFFECT OF ACCELERATION-DECELERATION COLUMN OF ION IMPLANTER
    10.
    发明申请
    WEAKENING FOCUSING EFFECT OF ACCELERATION-DECELERATION COLUMN OF ION IMPLANTER 有权
    弱化加速离子注入柱的影响

    公开(公告)号：US20060108543A1

    公开(公告)日：2006-05-25

    申请号：US10993346

    申请日：2004-11-19

    申请人： Shengwu Chang ,  Joseph Olson ,  Donald Anderson ,  Daniel McGillicuddy

    发明人： Shengwu Chang ,  Joseph Olson ,  Donald Anderson ,  Daniel McGillicuddy

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J2237/047 ,  H01J2237/12

    摘要： A method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode are disclosed. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.

    摘要翻译： 公开了一种用于在减速模式期间减弱离子注入机的加速 - 减速列的强焦点效应的方法和装置。 该装置包括围绕加速减速柱的减速透镜的离子束的管透镜。 管透镜引起离子束在管透镜入口处的散焦，这降低了柱产生的离子色散问题。 本发明还包括加速减速柱和并入管透镜的离子注入机。 还可以在管透镜之后添加附加减速抑制电极，以将电子限制在管透镜内。