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公开(公告)号：US20170194151A1
公开(公告)日：2017-07-06
申请号：US14892199
申请日：2015-06-25
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L29/66 , H01L29/786
CPC classification number: H01L21/26513 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1285 , H01L29/66757 , H01L29/78675
Abstract: The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (1), and forming the polysilicon thin film (3) on the substrate (1), and a thickness of the polysilicon thin film (3) accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (3), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.
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公开(公告)号：US10204787B2
公开(公告)日：2019-02-12
申请号：US14892199
申请日：2015-06-25
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L29/66 , H01L29/786 , H01L21/02 , H01L27/12
Abstract: The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (1), and forming the polysilicon thin film (3) on the substrate (1), and a thickness of the polysilicon thin film (3) accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (3), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.
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公开(公告)号：US20190131132A1
公开(公告)日：2019-05-02
申请号：US16233027
申请日：2018-12-26
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: A polysilicon thin film transistor (TFT) structure includes a substrate, a buffer layer covering the substrate, an island shaped semiconductor layer positioned on the buffer layer, a gate isolation layer covering the island shaped semiconductor layer, a gate positioned on the gate isolation layer, a passivation layer positioned on the gate and the gate isolation layer, and a source and a drain positioned on the passivation layer. The island shaped semiconductor layer is formed with a process that includes forming a polysilicon thin film on the substrate and implementing silicon self-ion implantation to the polysilicon thin film with a dosage and an energy level that prevent the polysilicon thin film from being decrystallized. The silicon self-ion implanted polysilicon thin film is further subjected to photolithography and ion doping to form the island shaped semiconductor layer with ion doping areas.
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公开(公告)号：US09470925B2
公开(公告)日：2016-10-18
申请号：US14428356
申请日：2014-10-28
Inventor： Shuichih Lien , Chihtsung Kang , Yicheng Kuo
IPC: G02F1/1335 , F21V8/00
CPC classification number: G02F1/133504 , G02B6/0053 , G02B6/0055 , G02B6/0056 , G02B6/0073 , G02F1/133514 , G02F1/133526 , G02F1/133528 , G02F1/133553 , G02F1/133605 , G02F1/133615 , G02F1/13362 , G02F2001/133507 , G02F2001/133548
Abstract: A liquid crystal display device includes a liquid crystal panel and a collimated exit light backlight module. The liquid crystal panel includes a CF substrate, an array substrate, and a liquid crystal layer. The CF substrate has an upper surface on which an upper polarizer film is arranged. The array substrate has a lower surface on which a lower polarizer film is arranged. The upper polarizer film includes a view angle diffusion film arranged thereon. The collimated exit light backlight module includes two backlight sources, a metallic grating reflector plate, a wire grid polarizer, and an optic film assembly. The two backlight sources, the metallic grating reflector plate, and the wire grid polarizer collectively define a light guide chamber. The liquid crystal display device greatly improves light transmittance and light extraction efficiency and also effectively overcomes the issue of color deviation at a large view angle.
Abstract translation: 液晶显示装置包括液晶面板和准直的出射光背光模块。 液晶面板包括CF基板，阵列基板和液晶层。 CF基板具有布置有上偏振膜的上表面。 阵列基板具有配置有下偏振膜的下表面。 上偏振片包括设置在其上的视角扩散膜。 准直的出射光背光模块包括两个背光源，金属光栅反射板，线栅偏振器和光学膜组件。 两个背光源，金属光栅反射板和线栅偏光镜共同限定一个导光室。 液晶显示装置大大提高了透光率和光提取效率，并且还有效地克服了在大视角下的颜色偏差的问题。
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