-
公开(公告)号：US20150204488A1
公开(公告)日：2015-07-23
申请号：US14345943
申请日：2014-01-24
Inventor： Changcheng Lo , Chong Huang , Yewen Wang
CPC classification number: F21K9/30 , F21K9/90 , H01L25/0753 , H01L33/641 , H01L33/644 , H01L2924/0002 , H05K1/056 , H05K2201/0162 , H05K2201/0323 , H05K2201/10106 , Y10T29/49146 , H01L2924/00
Abstract: The present invention provides a method for manufacturing an LED light bar and an LED light bar thereof. The method includes (1) providing a metal substrate (20) and a plurality of LED lights (40); (2) forming a graphene layer (60) on the metal substrate (20) in such a way that the graphene layer (60) includes hollow sections (62) formed to correspond to the LED lights (40); (3) mounting the LED lights (40) to the metal substrate (20) in the hollow sections (62); and (4) forming silicone layers (80) in the hollow sections (62). The method for manufacturing the LED light bar and the LED light bar thereof according to the present invention use a graphene layer formed on a metal substrate and use silicone layers for planarization and heat transfer so as to effectively enhance heat dissipation performance of the LED light bar and extend lifespan of the LED light bar.
Abstract translation: 本发明提供一种制造LED灯条及其LED灯条的方法。 该方法包括（1）提供金属基板（20）和多个LED灯（40）; （2）在所述金属基板（20）上形成石墨烯层（60），使得所述石墨烯层（60）包括形成为对应于所述LED灯（40）的中空部分（62）。 （3）将LED灯（40）安装在中空部（62）中的金属基板（20）上; 和（4）在中空部分（62）中形成硅氧烷层（80）。 根据本发明的LED灯条及其LED灯条的制造方法使用形成在金属基板上的石墨烯层，并使用有机硅层进行平坦化和传热，以有效提高LED灯条的散热性能 并延长LED灯条的使用寿命。
-
公开(公告)号：US09303834B1
公开(公告)日：2016-04-05
申请号：US14956123
申请日：2015-12-01
Inventor： Changcheng Lo , Chong Huang , Yewen Wang
CPC classification number: F21S4/28 , F21V19/0015 , F21Y2103/10 , F21Y2115/10 , H05K1/056 , H05K2201/0162 , H05K2201/0323 , H05K2201/10106
Abstract: Disclosed is a method for manufacturing an LED light bar and an LED light bar thereof. The method includes: providing a metal substrate and a plurality of LED lights; forming a graphene layer on the metal substrate in such a way that the graphene layer includes hollow sections formed to correspond to the LED lights; mounting the LED lights to the metal substrate in the hollow sections; and forming silicone layers in the hollow sections. The LED light bar includes a graphene layer formed on a metal substrate and silicone layers are provided for planarization and heat transfer so as to effectively enhance heat dissipation performance of the LED light bar and extend lifespan of the LED light bar.
Abstract translation: 公开了一种制造LED灯条及其LED灯条的方法。 该方法包括：提供金属基板和多个LED灯; 在所述金属基板上形成石墨烯层，使得所述石墨烯层包括形成为对应于所述LED灯的中空部分; 将LED灯安装在中空部分的金属基板上; 并在中空部分中形成硅氧烷层。 LED灯条包括形成在金属基板上的石墨烯层，并且为了平坦化和传热提供硅树脂层，以有效地提高LED灯条的散热性能并延长LED灯条的使用寿命。
-
公开(公告)号：US09947737B2
公开(公告)日：2018-04-17
申请号：US15622171
申请日：2017-06-14
Inventor： Wenhui Li , Changcheng Lo , Chihyuan Tseng , Yutong Hu
IPC: H01L27/32 , G09G3/3225 , G09G3/32 , H01L29/786
CPC classification number: H01L27/3265 , G09G3/32 , G09G3/3225 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2300/0852 , H01L27/32 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/786
Abstract: A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. An isolation layer with a flat top surface is sandwiched between a transparent electrode and a pixel electrode to form a transparent capacitor.
-
公开(公告)号：US20170194151A1
公开(公告)日：2017-07-06
申请号：US14892199
申请日：2015-06-25
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L29/66 , H01L29/786
CPC classification number: H01L21/26513 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1285 , H01L29/66757 , H01L29/78675
Abstract: The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (1), and forming the polysilicon thin film (3) on the substrate (1), and a thickness of the polysilicon thin film (3) accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (3), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.
-
公开(公告)号：US20190131132A1
公开(公告)日：2019-05-02
申请号：US16233027
申请日：2018-12-26
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: A polysilicon thin film transistor (TFT) structure includes a substrate, a buffer layer covering the substrate, an island shaped semiconductor layer positioned on the buffer layer, a gate isolation layer covering the island shaped semiconductor layer, a gate positioned on the gate isolation layer, a passivation layer positioned on the gate and the gate isolation layer, and a source and a drain positioned on the passivation layer. The island shaped semiconductor layer is formed with a process that includes forming a polysilicon thin film on the substrate and implementing silicon self-ion implantation to the polysilicon thin film with a dosage and an energy level that prevent the polysilicon thin film from being decrystallized. The silicon self-ion implanted polysilicon thin film is further subjected to photolithography and ion doping to form the island shaped semiconductor layer with ion doping areas.
-
Patent Agency Ranking
公开(公告)号：US09704937B2
公开(公告)日：2017-07-11
申请号：US14426987
申请日：2014-09-19
Inventor： Wenhui Li , Changcheng Lo , Chihyuan Tseng , Yutong Hu
IPC: H01L27/32 , G09G3/32 , H01L29/786 , G09G3/3225
CPC classification number: H01L27/3265 , G09G3/32 , G09G3/3225 , G09G2300/0465 , G09G2300/0809 , H01L27/32 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/786
Abstract: A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. A transparent electrode, a pixel electrode and a flat isolation layer sandwiched between the transparent electrode and the pixel electrode construct a transparent capacitor.
-
公开(公告)号：US09698372B2
公开(公告)日：2017-07-04
申请号：US14424526
申请日：2015-02-09
Inventor： Weijing Zeng , Changcheng Lo
CPC classification number: H01L51/5253 , G06F3/0412 , G06F3/045 , G06F2203/04103 , H01L27/323 , H01L51/5218 , H01L51/5234 , H01L51/5281 , H01L51/56
Abstract: The present invention provides an OLED touch control display device and a manufacture method thereof. The OLED touch control display device comprises: a transparent substrate (10), a transparent package cover plate (20), an OLED thin film element (11) located at one side of the transparent substrate (10) facing the transparent package cover plate (20), a thin film package layer (12) being located on the OLED thin film element (11) and completely covering the OLED thin film element (11), a transparent conductive outer layer (31) located on the thin film package layer (12), an antiglare layer (34) located at one side of the transparent package cover plate (20) facing the transparent substrate (10), a transparent conductive inner layer (33) located under the antiglare layer (34) and a transparent isolation dot layer (32) located under the transparent conductive inner layer (33); the transparent conductive outer layer (31), the transparent isolation dot layer (32) and the transparent conductive inner layer (33) construct a touch control panel (30); the OLED touch control display device reduces the difficulty of the manufacture process and contributes to raise the productivity.
-
公开(公告)号：US09276046B2
公开(公告)日：2016-03-01
申请号：US14384672
申请日：2014-08-15
Inventor： Yawei Liu , Yifan Wang , Changcheng Lo
CPC classification number: H01L27/322 , H01L27/1214 , H01L27/3213 , H01L27/3244 , H01L27/3262 , H01L51/502 , H01L51/5024 , H01L51/5036 , H01L51/5237 , H01L51/5246 , H01L2251/5369
Abstract: The invention provides a color display device structure, including a substrate (1), an anode (21), a thin film transistor array (23), a hole injection layer (24), a hole transport layer (25), a light emitting layer (26), an electron transport layer (27), a cathode (28), a cover plate (3), a color conversion layer (4) formed on the inner side of the cover plate (3), and a sealant (6). The light emitting layer (26) is a blue and green light emitting layer (26). The color conversion layer (4) includes a blue filter unit (41), a green filter unit (43) and a red conversion unit (45) separated one another. The blue light and the green light emitted by the blue and green light emitting layer (26) is filtered to become blue light by the blue filter unit (41). The blue light and the green light emitted by the blue and green light emitting layer (26) is filtered to become green light by the green filter unit (43). The blue light and the green light emitted by the blue and green light emitting layer (26) is converted to red light by the red conversion unit (45). The color display is achieved by the color display device structure. The color display device structure is manufactured by a simple production process, and has the features of high color purity, good emitting efficiency, high stability, ultra-thin, and so on.
Abstract translation: 本发明提供一种彩色显示装置结构，包括基板（1），阳极（21），薄膜晶体管阵列（23），空穴注入层（24），空穴传输层（25），发光 层（26），电子传输层（27），阴极（28），盖板（3），形成在盖板（3）内侧的颜色转换层（4） 6）。 发光层（26）是蓝色和绿色发光层（26）。 颜色转换层（4）包括蓝色滤色器单元（41），绿色滤光单元（43）和红色转换单元（45）。 由蓝色滤色器单元（41）将由蓝色和绿色发光层（26）发出的蓝色光和绿色光过滤成蓝色光。 蓝色和绿色发光层（26）发出的蓝色光和绿色光被绿色滤光器单元（43）滤波成绿色光。 由蓝色和绿色发光层（26）发射的蓝色光和绿色光被红色转换单元（45）转换成红色光。 彩色显示是通过彩色显示装置的结构实现的。 彩色显示装置结构通过简单的制作工艺制造，具有色纯度高，发光效率好，稳定性高，超薄等特点。
-
公开(公告)号：US10204787B2
公开(公告)日：2019-02-12
申请号：US14892199
申请日：2015-06-25
Inventor： Liangfen Zhang , Shuichih Lien , Changcheng Lo , Yuanchun Wu , Yuanjun Hsu , Hoising Kwok , Man Wong , Rongsheng Chen , Wei Zhou , Meng Zhang
IPC: H01L21/265 , H01L29/66 , H01L29/786 , H01L21/02 , H01L27/12
Abstract: The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (1), and forming the polysilicon thin film (3) on the substrate (1), and a thickness of the polysilicon thin film (3) accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (3), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.
-
公开(公告)号：US09466809B2
公开(公告)日：2016-10-11
申请号：US14430200
申请日：2014-09-11
Inventor： Yawei Liu , Yifan Wang , Changcheng Lo
IPC: H01L33/00 , H01L51/52 , H01L51/56 , H01L23/544 , H01L27/32
CPC classification number: H01L51/5246 , H01L23/544 , H01L27/3244 , H01L51/5259 , H01L51/56 , H01L2223/54426 , H01L2223/54486 , H01L2227/323 , H01L2251/303 , H01L2251/558
Abstract: The present invention provides an OLED packaging method and structure. The method includes the following steps: providing an OLED substrate (1) and a package cover (4) and forming an alignment mark on the package cover (4); forming a circle of patternized desiccant layer (3) on the package cover (4); coating a circle of frame resin (5) on the package cover (4) at an outer side of the desiccant layer (3); attaching the package cover (4) and the OLED substrate (1) to each other; and subjecting the frame resin (5) to irradiation of a UV light source or heating for curing so as to complete packaging of the OLED substrate (1) with he package cover (4).
Abstract translation: 本发明提供一种OLED封装方法和结构。 该方法包括以下步骤：提供OLED基板（1）和封装盖（4）并在封装盖（4）上形成对准标记; 在包装盖（4）上形成图案化的干燥剂层（3）的一圈; 在干燥剂层（3）的外侧在包装盖（4）上涂覆一圈框架树脂（5）; 将所述封装盖（4）和所述OLED基板（1）彼此连接; 对所述框架树脂（5）进行UV光源照射或加热固化，以完成所述OLED基板（1）与所述封装盖（4）的封装。
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.021 seconds)
