公开(公告)号：US20080118858A1

公开(公告)日：2008-05-22

申请号：US11943749

申请日：2007-11-21

申请人： Shigenori YUUYA ,  Katsuhiro KOHDA

发明人： Shigenori YUUYA ,  Katsuhiro KOHDA

IPC分类号： G03G5/08

CPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G03G5/08292

摘要： A polycrystalline photo-conductor containing Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti, is produced by hydrothermal synthesis processing. The photo-conductor is adapted for constituting a radiation imaging panel capable of recording radiation image information.

摘要翻译： 制备含有Bi 12 M 20 O 20的多晶光导体，其中M表示选自Ge，Si和Ti中的至少一种元素， 通过水热合成处理。 光导体适于构成能够记录放射线图像信息的放射线图像面板。

公开(公告)号：US20080116385A1

公开(公告)日：2008-05-22

申请号：US11943680

申请日：2007-11-21

申请人： Shigenori YUUYA ,  Katsuhiro KOHDA

发明人： Shigenori YUUYA ,  Katsuhiro KOHDA

IPC分类号： G01T1/24

CPC分类号： H01L27/14676 ,  H01L27/14683

摘要： A photo-conductor, which is adapted for use in constituting a radiation detector and which is capable of forming electric charges by being exposed to radiation, contains Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. The photo-conductor has characteristics such that a proportion of a diffuse reflectivity at a wavelength of 450 nm with respect to the diffuse reflectivity at a wavelength of 600 nm is equal to at least 75%.

摘要翻译： 适用于构成放射线检测器并且能够通过暴露于辐射而形成电荷的光导体包含Bi 12 N 20 O 20， 其中M表示选自Ge，Si和Ti中的至少一种元素。 光导体具有这样的特性，使得波长450nm处的漫反射率相对于在600nm波长处的漫反射率的比例等于至少75％。

公开(公告)号：US20090032096A1

公开(公告)日：2009-02-05

申请号：US12182358

申请日：2008-07-30

申请人： Atsushi TANAKA ,  Kenichi UMEDA ,  Kohei HIGASHI ,  Hiroshi SUNAGAWA ,  Katsuhiro KOHDA

发明人： Atsushi TANAKA ,  Kenichi UMEDA ,  Kohei HIGASHI ,  Hiroshi SUNAGAWA ,  Katsuhiro KOHDA

IPC分类号： H01L31/00 ,  B32B27/00 ,  B05D3/06

CPC分类号： H01L31/072 ,  H01L27/1218 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/3244 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  H01L51/0096 ,  H01L51/5256 ,  Y02E10/541 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/31504

摘要： In a process for producing a thin-film device having an inorganic film formed over a resin-based substrate, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over the thermal-buffer layer, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing the proportion of the short-wavelength light which reaches the substrate. Thereafter, a non-monocrystalline film which is to be annealed is formed over the light-cutting layer, where the non-monocrystalline film transmits the short-wavelength light to such a degree that the short-wavelength light can damage the substrate. Then, an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.

摘要翻译： 在制造具有在树脂基基板上形成的无机膜的薄膜器件的方法中，在包含树脂材料作为主要成分的基片上形成热缓冲层，形成光切割层 在热缓冲层上，通过减少到达基板的短波长光的比例，光切割层防止从短波长光到基板的损伤。 此后，在光切割层上形成待退火的非单晶膜，其中非单晶膜将短波长光发射到短波长光可损坏衬底的程度。 然后，通过用短波长光照射非单晶膜以使非单晶膜退火来形成无机膜。

公开(公告)号：US20100240164A1

公开(公告)日：2010-09-23

申请号：US12725042

申请日：2010-03-16

申请人： Katsuhiro KOHDA ,  Naoharu KIYOTO

发明人： Katsuhiro KOHDA ,  Naoharu KIYOTO

IPC分类号： H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14659 ,  H01L27/14696

摘要： A coating film is formed by applying, on a tentative support, a dispersion solution in which at least an inorganic semiconductor particle and a binder are dispersed. Then, a radiation photoconductive layer is formed by subjecting the coating film to thermal compression, and the radiation photoconductive layer is joined to an active matrix layer in which multiple switching elements are arranged. This allows the radiation photoconductive layer to generate a charge in response to radiation of an electromagnetic wave representing image information and to be arranged such that the charge is read out by the active matrix layer.

摘要翻译： 通过在暂时的载体上涂布至少分散有无机半导体颗粒和粘合剂的分散液形成涂膜。 然后，通过对涂膜进行热压缩而形成放射光电导层，并且将辐射光电导层接合到其中布置有多个开关元件的有源矩阵层。 这允许辐射光电导层响应于表示图像信息的电磁波的辐射而产生电荷，并且被布置为使得电荷被有源矩阵层读出。

公开(公告)号：US20090230309A1

公开(公告)日：2009-09-17

申请号：US12404685

申请日：2009-03-16

申请人： Katsuhiro KOHDA

发明人： Katsuhiro KOHDA

IPC分类号： G01T1/24 ,  H01L21/00

CPC分类号： G01T1/24

摘要： A method for manufacturing a solid state radiation detector having an active matrix layer, in which a great number of reading elements are arranged, and a radiation photoconductive layer that generates electric charges when irradiated by electromagnetic waves that bear image information, provided such that the electric charges are read out by the active matrix layer, is characterized by: the active matrix layer being formed directly on the radiation photoconductive layer.

摘要翻译： 一种制造固体放射线检测器的方法，该固体放射线检测器具有排列有大量读取元件的有源矩阵层，以及辐射光电导层，当照射具有图像信息的电磁波照射时产生电荷， 电荷由有源矩阵层读出，其特征在于：有源矩阵层直接形成在辐射光电导层上。