公开(公告)号：US08304335B2

公开(公告)日：2012-11-06

申请号：US13269153

申请日：2011-10-07

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

摘要翻译： 根据本发明，提供了一种电极结构，其包括：氮化物半导体层; 设置在氮化物半导体层上的电极; 以及设置在所述电极上的电极保护膜，其中所述氮化物半导体层包含含有Nb，Hf或Zr作为构成元素的金属氮化物，所述电极具有含有作为其中形成的构成元素的Ti或V的金属氧化物的部分， 并且所述电极保护膜覆盖所述电极的至少一部分，并且包含具有Au或Pt作为构成要素的保护层。

公开(公告)号：US08169078B2

公开(公告)日：2012-05-01

申请号：US12519698

申请日：2007-12-11

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L23/48

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

公开(公告)号：US20100200863A1

公开(公告)日：2010-08-12

申请号：US11917124

申请日：2006-07-06

申请人： Tatsuya Sasaki ,  Kazuhiro Shiba ,  Shigeru Koumoto ,  Masayoshi Sumino

发明人： Tatsuya Sasaki ,  Kazuhiro Shiba ,  Shigeru Koumoto ,  Masayoshi Sumino

IPC分类号： H01L29/40 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01S5/32341 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22

摘要： A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11.

摘要翻译： 在GaN衬底11上形成包含Ti作为构成元素的第一层，含有Nb作为构成元素的第二层和含有Au作为构成元素的第三层。此后，GaN衬底11和第一至第三层 保持在700℃以上且1300℃以下。 这允许Ti的金属氧化物从GaN衬底11和电极14之间的界面延伸到电极14的内部。此外，在GaN衬底11的内部形成Nb的金属氮化物 Nb的金属氮化物将从电极14的内部扩散到GaN衬底11的内部。

公开(公告)号：US20100032839A1

公开(公告)日：2010-02-11

申请号：US12519698

申请日：2007-12-11

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

摘要翻译： 根据本发明，提供了一种电极结构，其包括：氮化物半导体层; 设置在氮化物半导体层上的电极; 以及设置在所述电极上的电极保护膜，其中所述氮化物半导体层包含含有Hb，Hf或Zr作为构成元素的金属氮化物，所述电极具有含有作为其中形成的构成元素的Ti或V的金属氧化物的部分， 并且所述电极保护膜覆盖所述电极的至少一部分，并且包含具有Au或Pt作为构成要素的保护层。

公开(公告)号：US08330242B2

公开(公告)日：2012-12-11

申请号：US12919551

申请日：2009-03-05

申请人： Kazuhiro Shiba ,  Junichi Fujikata

发明人： Kazuhiro Shiba ,  Junichi Fujikata

IPC分类号： G02B6/26

CPC分类号： H01L31/105 ,  G02B6/12004 ,  G02B6/125 ,  H01L31/107

摘要： The Si waveguide 305 includes a first conductivity-type Si layer 301 and an intrinsic Si layer 302, and a second conductivity-type light-absorption layer 303 is partially formed on an area thereof. During operation, a reverse bias is applied between the first conductivity-type Si layer 301 and the light-absorption layer 303. Since the light-absorption layer 303 has a conductivity type, it is not depleted when a voltage is applied, but the intrinsic Si layer 302 forming the Si waveguide 305 is depleted. Therefore, it is possible to reduce a CR time constant. Furthermore, since the intrinsic Si layer 302 can be formed on the first conductivity-type Si layer 301 in a continuous manner, it is possible to reduce lattice defects. As a result, it is possible to suppress the dark current generated in the light-receiving element.

摘要翻译： Si波导305包括第一导电型Si层301和本征Si层302，并且在其一部分上部分地形成第二导电型光吸收层303。 在操作期间，在第一导电型Si层301和光吸收层303之间施加反向偏压。由于光吸收层303具有导电类型，所以在施加电压时不会耗尽，而是内在的 形成Si波导305的Si层302耗尽。 因此，可以减少CR时间常数。 此外，由于本征Si层302可以以连续的方式形成在第一导电型Si层301上，所以可以减少晶格缺陷。 结果，可以抑制在光接收元件中产生的暗电流。

公开(公告)号：US20090160033A1

公开(公告)日：2009-06-25

申请号：US12095031

申请日：2006-12-20

申请人： Sawaki Watanabe ,  Kazuhiro Shiba ,  Takeshi Nakata

发明人： Sawaki Watanabe ,  Kazuhiro Shiba ,  Takeshi Nakata

IPC分类号： H01L29/06 ,  H01L31/0352 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L31/022408 ,  H01L31/035281 ,  H01L31/1075 ,  H01L31/109 ,  Y02E10/50

摘要： A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.

摘要翻译： 光接收元件1具有半导体衬底101; 设置在半导体衬底101上的第一台面11，并且具有有源区和设置在有源区上的第一电极（p侧电极111）; 设置在半导体衬底101上的第二台面12，并且具有设置在半导体层上的半导体层和第二电极（n侧电极121）; 以及设置在半导体衬底101上并具有半导体层的第三台面13，其中第三台面13布置成围绕第一台面11。

公开(公告)号：US06728595B2

公开(公告)日：2004-04-27

申请号：US10176134

申请日：2002-06-21

申请人： Minoru Hamamura ,  Jun Fujita ,  Kazuhiro Shiba

发明人： Minoru Hamamura ,  Jun Fujita ,  Kazuhiro Shiba

IPC分类号： G06F1900

CPC分类号： G05B19/4163 ,  G05B2219/35473 ,  G05B2219/43201

摘要： A feed velocity of a control axis and acceleration thereof do not exceed a maximum feed velocity and a maximum acceleration defined in mechanical specifications even if a radial operation is carried out for the purpose of a cut-in or escape operation in a contour describing control. A radial permissible maximum velocity (Vnp) and a radial permissible maximum acceleration (&agr;np) in a contour describing control using a circular interpolation is set separately from a setting value of a maximum feed velocity (Vm) of a control axis and that of a maximum acceleration (&agr;m) thereof set as mechanical specifications, and when a command of the circular interpolation is given, limitations are given to a radial velocity (Vn) and acceleration (&agr;n) so that the radial velocity (Vn) and acceleration (&agr;n) do not exceed the radial permissible maximum velocity (Vnp) and permissible maximum acceleration (&agr;np).

摘要翻译： 控制轴的进给速度及其加速度不会超过在机械规格中定义的最大进给速度和最大加速度，即使在轮廓描述控制中进行切入或逃逸操作的径向操作。 使用圆弧插补描述控制的轮廓中的径向允许最大速度（Vnp）和径向允许最大加速度（alphanp）与控制轴的最大进给速度（Vm）和最大进给速度（Vm）的设定值分开设置 加速度（alpham）设定为机械规格，当给出圆弧插补的指令时，对径向速度（Vn）和加速度（alphan）给出限制，使得径向速度（Vn）和加速度（alphan） 不超过径向允许最大速度（Vnp）和允许的最大加速度（alphanp）。

公开(公告)号：US20090050933A1

公开(公告)日：2009-02-26

申请号：US11815003

申请日：2005-12-15

申请人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

发明人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

IPC分类号： H01L31/0304 ,  H01L21/00

CPC分类号： H01L31/02161 ,  H01L31/035281 ,  H01L31/107 ,  Y02E10/50

摘要： Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

摘要翻译： 公开了一种具有高再现性和可靠性的半导体光接收装置。 还公开了一种用于制造半导体光接收装置的方法。 具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6， 暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。 电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

公开(公告)号：US06895297B2

公开(公告)日：2005-05-17

申请号：US10281983

申请日：2002-10-29

申请人： Kazuhiro Shiba ,  Minoru Hamamura

发明人： Kazuhiro Shiba ,  Minoru Hamamura

IPC分类号： B23Q15/00 ,  G05B19/404 ,  G05B19/409 ,  G05B19/4155 ,  G05B23/02 ,  G06F19/00

CPC分类号： G05B19/409 ,  G05B2219/33119 ,  G05B2219/35398 ,  G05B2219/35439 ,  G05B2219/35472

摘要： A numerical control device is disclosed having a parameter memory section 12B that stores discrete optimum parameters for respective operational modes, an operational mode setting switch 20 to allow operational modes to be selectively set through user's operation, and a defect content setting means for registering defect contents of machined results. The optimum parameter, suited for a particular operational mode selected and set with the operational mode setting switch 20, is retrieved for executing setting of the parameter while enabling setting of the parameter based on information obtained with the defect content setting means.

摘要翻译： 公开了一种数字控制装置，具有存储用于各个操作模式的离散最优参数的参数存储部分12B，操作模式设置开关20，以允许通过用户操作来选择性地设置操作模式;以及缺陷内容设置装置，用于记录缺陷 加工结果的内容。 检索适合于使用操作模式设置开关20选择和设置的特定操作模式的最佳参数，以便执行参数的设置，同时基于使用缺陷内容设置装置获得的信息来设置参数。

公开(公告)号：US06889115B2

公开(公告)日：2005-05-03

申请号：US10108866

申请日：2002-03-29

申请人： Kazuhiro Shiba ,  Minoru Hamamura ,  Jun Fujita

发明人： Kazuhiro Shiba ,  Minoru Hamamura ,  Jun Fujita

IPC分类号： G05B11/01 ,  G05B19/404 ,  G05D3/12 ,  H02P5/00 ,  H02P29/00 ,  G06F19/00

CPC分类号： G05B19/404 ,  G05B2219/41041 ,  G05B2219/41045

摘要： A position control apparatus and method has been devised which provides for an improved means of suppressing tracking error from a variable position reference occurring when a control object positioned via a transmission mechanism with mechanical transmission error resumes movement from a state stopped at a target position. A selection between two alternative tracking error compensating means within the control apparatus is made based on whether the detected position of the control object changes in a period after the control object stops and before the variable position reference is input again to a control deviation generating unit.

摘要翻译： 已经设计了一种位置控制装置和方法，其提供了一种改进的方法，用于当经由具有机械传动错误的传动机构定位的控制对象从在目标位置处停止的状态恢复运动时，从可变位置参考中消除跟踪误差。 基于控制对象的检测位置是否在控制对象停止之后的时段内以及在可变位置参考被再次输入到控制偏差产生单元之前，进行控制装置内的两个可选跟踪误差补偿装置之间的选择。