Light-emitting diode and method for manufacturing the same
    1.
    发明授权
    Light-emitting diode and method for manufacturing the same 有权
    发光二极管及其制造方法

    公开(公告)号:US07675077B2

    公开(公告)日:2010-03-09

    申请号:US11627013

    申请日:2007-01-25

    IPC分类号: H01L33/00

    摘要: A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.

    摘要翻译: 对发光二极管(LED)及其制造方法进行说明。 发光二极管包括:导电基板,包括第一表面和与第一表面相对的第二表面; 金属接合层,其设置在所述导电性基板的第一面上; 反射金属层,其设置在金属接合层上; 放置在反射金属层上的N型半导体层; 位于N型半导体层上的有源层; 位于有源层上的P型半导体层; 窗口层位于P型半导体层上,其中窗口层的厚度基本上至少为50μm,窗口层由透明导电材料构成; 以及放置在窗口层上的P型电极。

    METHOD OF MAKING A VERTICALLY STRUCTURED LIGHT EMITTING DIODE
    2.
    发明申请
    METHOD OF MAKING A VERTICALLY STRUCTURED LIGHT EMITTING DIODE 审中-公开
    制造垂直结构发光二极管的方法

    公开(公告)号:US20110076794A1

    公开(公告)日:2011-03-31

    申请号:US12872560

    申请日:2010-08-31

    IPC分类号: H01L33/02

    CPC分类号: H01L33/0095 H01L33/0079

    摘要: A method of making a vertically structured light emitting diode includes: providing a sacrificial substrate having first and second portions; forming a first buffer layer on a surface of the sacrificial substrate; forming a second buffer layer on a surface of the first buffer layer; forming a light emitting unit on a surface of the second buffer layer; forming a device substrate on a surface of the light emitting unit; etching the first portion of the sacrificial substrate such that the second portion of the sacrificial substrate remains on the first buffer layer; dry-etching the second portion of the sacrificial substrate; dry-etching the first buffer layer; and etching the second buffer layer. An etch rate of a material of the second buffer layer is lower than an etch rate of a material of the first buffer layer.

    摘要翻译: 制造垂直结构的发光二极管的方法包括:提供具有第一和第二部分的牺牲衬底; 在所述牺牲衬底的表面上形成第一缓冲层; 在所述第一缓冲层的表面上形成第二缓冲层; 在所述第二缓冲层的表面上形成发光单元; 在所述发光单元的表面上形成器件基板; 蚀刻牺牲衬底的第一部分,使得牺牲衬底的第二部分保留在第一缓冲层上; 干蚀刻牺牲衬底的第二部分; 干蚀刻第一缓冲层; 并蚀刻第二缓冲层。 第二缓冲层的材料的蚀刻速率低于第一缓冲层的材料的蚀刻速率。

    Method and structure of a reusable substrate
    3.
    发明申请
    Method and structure of a reusable substrate 审中-公开
    可重复使用的基材的方法和结构

    公开(公告)号:US20090035534A1

    公开(公告)日:2009-02-05

    申请号:US12155870

    申请日:2008-06-11

    IPC分类号: H01L21/311 B32B5/00

    摘要: A reusable substrate structure and a method of handling the reusable substrate are disclosed. The reusable substrate structure comprises a substrate, at least one epitaxial layer and at least one inter layer. The method used in this invention is by employing a separating method in order to decompose the inter layer. Since the inter layer is decomposed, the substrate and the epitaxial layer will be separated. This achieves the goal of reusable substrate and then can save the material cost without additional wasting.

    摘要翻译: 公开了可重复使用的基板结构和处理可重复使用的基板的方法。 可重复使用的衬底结构包括衬底,至少一个外延层和至少一个内层。 本发明中使用的方法是采用分离方法以分解层间。 由于层间分解,衬底和外延层将被分离。 这实现了可重复使用的基板的目标,然后可以节省材料成本而没有额外的浪费。