公开(公告)号：US08097534B2

公开(公告)日：2012-01-17

申请号：US12222442

申请日：2008-08-08

申请人： Shuhei Ogawa ,  Shin Hirotsu

发明人： Shuhei Ogawa ,  Shin Hirotsu

IPC分类号： H01L21/4763

CPC分类号： H01L21/31138 ,  H01L21/76808 ,  H01L21/76816

摘要： On an etching target film formed on a substrate, a three-layer resist is laminated. This three-layer resist includes an organic film and a resist film developed into a resist pattern. Through the resist pattern, the organic film is etched into a mask pattern through which the etching target film will be etched.The organic film is etched with plasma which is obtained by exciting a process gas containing carbon dioxide and hydrogen to the plasma state. This scheme makes it possible to form a high perpendicularity mask pattern in the organic film.

摘要翻译： 在形成在基板上的蚀刻目标膜上层叠三层抗蚀剂。 该三层抗蚀剂包括显影成抗蚀剂图案的有机膜和抗蚀剂膜。 通过抗蚀剂图案，将有机膜蚀刻成蚀刻目标膜将被蚀刻的掩模图案。 用等离子体蚀刻有机膜，该等离子体是通过将含有二氧化碳和氢气的工艺气体激发到等离子体状态获得的。 该方案使得可以在有机膜中形成高垂直度掩模图案。

公开(公告)号：US20090047794A1

公开(公告)日：2009-02-19

申请号：US12222442

申请日：2008-08-08

申请人： Shuhei Ogawa ,  Shin Hirotsu

发明人： Shuhei Ogawa ,  Shin Hirotsu

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01L21/76808 ,  H01L21/76816

摘要： [Object] It is an object of the present invention to provide a semiconductor device manufacturing method capable of forming a high perpendicularity mask pattern, which is laminated on an etching target film on a substrate, through a resist pattern formed from a resist film laminated on the organic film, for use as an etching mask for the etching target film.[Means for Solving the Problem] There is provided a step of etching an organic film in a multi-layered resist laminated on an etching target film on a substrate, the multi-layered resist including the organic film and a resist film having a resist pattern laminated on the organic film, by a plasma, which has been obtained by making a process gas containing carbon dioxide and hydrogen, along the resist pattern, so as to form a mask pattern for etching the etching target film.

摘要翻译： 本发明的目的是提供一种半导体器件制造方法，该半导体器件制造方法能够通过由抗蚀剂图案形成的抗蚀剂图案形成高垂直性掩模图案，该抗蚀剂图案层压在基板上的蚀刻目标膜上 该有机膜用作蚀刻目标膜的蚀刻掩模。 解决问题的手段提供了在层叠在基板上的蚀刻对象膜上的多层抗蚀剂中蚀刻有机膜的步骤，包含有机膜的多层抗蚀剂和具有抗蚀剂图案的抗蚀剂膜 通过沿着抗蚀剂图案制造包含二氧化碳和氢气的工艺气体而获得的等离子体，以形成用于蚀刻蚀刻靶膜的掩模图案，在有机膜上层压。

公开(公告)号：US07465670B2

公开(公告)日：2008-12-16

申请号：US11390248

申请日：2006-03-28

申请人： Shin Hirotsu ,  Shuhei Ogawa

发明人： Shin Hirotsu ,  Shuhei Ogawa

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L21/31144 ,  H01L21/31633

摘要： On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2 mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.

摘要翻译： 在半导体晶片W的表面上依次形成SiCN膜，SiCOH膜，TEOS膜，抗反射膜和抗蚀剂膜（ArF抗蚀剂）作为掩模。 通过用包含混合气体的预定蚀刻气体例如CF4 / CH2F2 / N2 / O2混合气体（不含Ar气等稀有气体）等离子体蚀刻SiCOH膜而形成通孔。 由此，可以提高包含含碳氧化硅的低介电常数绝缘膜与抗蚀剂之间的选择比。 同时，即使孔具有微小直径和高纵横比，也可以在令人满意的状态下形成孔的内壁面。

公开(公告)号：US20060213866A1

公开(公告)日：2006-09-28

申请号：US11390248

申请日：2006-03-28

申请人： Shin Hirotsu ,  Shuhei Ogawa

发明人： Shin Hirotsu ,  Shuhei Ogawa

IPC分类号： C23F1/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L21/31144 ,  H01L21/31633

摘要： On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2 mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.

摘要翻译： 在半导体晶片W的表面上依次形成SiCN膜，SiCOH膜，TEOS膜，抗反射膜和抗蚀剂膜（ArF抗蚀剂）作为掩模。 通过用包含混合气体的预定蚀刻气体等离子体蚀刻SiCOH膜形成通孔，例如CF 4 / CH 2 F 2， 混合气体（不含Ar气等稀有气体）。 由此，可以提高包含含碳氧化硅的低介电常数绝缘膜与抗蚀剂之间的选择比。 同时，即使孔具有微小直径和高纵横比，也可以在令人满意的状态下形成孔的内壁面。

公开(公告)号：US07943523B2

公开(公告)日：2011-05-17

申请号：US11677759

申请日：2007-02-22

申请人： Shin Hirotsu ,  Wakako Naito ,  Yoshinori Suzuki

发明人： Shin Hirotsu ,  Wakako Naito ,  Yoshinori Suzuki

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01J37/32027 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31144

摘要： A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.

摘要翻译： 用于等离子体蚀刻形成在目标物体上的抗反射涂层的等离子体蚀刻方法包括将目标物体放置在具有彼此相对设置的具有第一电极和第二电极的处理室中的步骤，目标物体包括蚀刻 目标膜，抗反射涂层和在基板上依次形成的图案化的光致抗蚀剂膜。 等离子体蚀刻方法还包括将处理气体引入处理室的步骤; 通过向所述第一电极和所述第二电极之一施加高频电力来产生等离子体; 以及向所述第一电极和所述第二电极之一施加DC电压。

公开(公告)号：US20080020584A1

公开(公告)日：2008-01-24

申请号：US11725559

申请日：2007-03-20

申请人： Shin Hirotsu ,  Yoshinori Suzuki

发明人： Shin Hirotsu ,  Yoshinori Suzuki

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76808

摘要： The method of manufacturing a semiconductor device according to the present invention includes a step of etching an organic film formed to be embedded in recesses in a low dielectric constant film which is made of a material containing silicon, carbon, oxygen, and hydrogen. The organic film is typically a sacrifice film formed on the low dielectric constant film to be embedded in recesses formed in the low dielectric constant for embedding electrodes therein. The etching is performed with plasma of a process gas containing carbon dioxide. With the method, the organic film can be etched while suppressing damage to the low dielectric constant film.

摘要翻译： 根据本发明的制造半导体器件的方法包括在由含有硅，碳，氧和氢的材料制成的低介电常数膜中蚀刻形成为嵌入凹陷中的有机膜的步骤。 有机膜通常是在低介电常数膜上形成的牺牲膜，其被埋入形成为低介电常数的凹部中，用于将电极嵌入其中。 用包含二氧化碳的工艺气体的等离子体进行蚀刻。 通过该方法，可以蚀刻有机膜，同时抑制对低介电常数膜的损伤。