公开(公告)号：US09076995B2

公开(公告)日：2015-07-07

申请号：US13426020

申请日：2012-03-21

申请人： Shin Serizawa ,  Hiroo Takahashi ,  Daisuke Kawasaki ,  Jiro Iriyama ,  Ryuichi Kasahara ,  Emiko Fujii ,  Tetsuya Kajita ,  Tatsuji Numata

发明人： Shin Serizawa ,  Hiroo Takahashi ,  Daisuke Kawasaki ,  Jiro Iriyama ,  Ryuichi Kasahara ,  Emiko Fujii ,  Tetsuya Kajita ,  Tatsuji Numata

IPC分类号： H01M2/12 ,  H01M2/02

CPC分类号： H01M2/02 ,  H01M2/0212 ,  H01M2/12 ,  H01M2/1235 ,  H01M2/1247 ,  H01M2/1252 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49112

摘要： A secondary battery according to the present exemplary embodiment is a secondary battery including a laminated electrode body provided with at least one pair of positive and negative electrodes and an outer enclosure that accommodates the laminated electrode body, wherein the outer enclosure includes one or more concave portions, inside a border corresponding to an outer edge of an electrode surface of an outermost layer of the laminated electrode body, on a surface facing the electrode surface, and wherein, when a band-shaped outer circumferential region having an area that is a half of an area inside the border is set inside the border, at least one of the concave portions is located inside the outer circumferential region.

摘要翻译： 根据本示例性实施例的二次电池是包括设置有至少一对正极和负极的层压电极体和容纳层叠电极体的外壳的二次电池，其中，所述外壳包括一个或多个凹部 在与电极表面相对的表面上的与层压电极体的最外层的电极表面的外边缘相对应的边界内，并且其中，当带状外周区域的面积为 边界内的区域设置在边界内，至少一个凹部位于外周区域的内部。

公开(公告)号：US20100276775A1

公开(公告)日：2010-11-04

申请号：US12810089

申请日：2008-12-25

申请人： Emiko Fujii

发明人： Emiko Fujii

IPC分类号： H01L31/107 ,  H01L31/0352

CPC分类号： H01L31/107 ,  H01L31/02161

摘要： The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.

摘要翻译： 半导体光接收元件1包括半导体衬底101和设置在半导体衬底101的顶部上的具有光吸收层105的半导体层。半导体光接收元件1的半导体层至少包含光吸收 层105具有台面结构，台面的侧壁设置有覆盖侧壁的保护膜113。 保护膜113是含有氢的氮化硅膜，位于台面侧壁侧的保护膜113的一个面的氢浓度低于位于保护膜113的另一面的氢浓度 与台面侧壁相对的一侧。

公开(公告)号：US08212286B2

公开(公告)日：2012-07-03

申请号：US12810089

申请日：2008-12-25

申请人： Emiko Fujii

发明人： Emiko Fujii

IPC分类号： H01L31/07 ,  H01L27/148 ,  H01L23/58

CPC分类号： H01L31/107 ,  H01L31/02161

摘要： The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.

摘要翻译： 半导体光接收元件1包括半导体衬底101和设置在半导体衬底101的顶部上的具有光吸收层105的半导体层。半导体光接收元件1的半导体层至少包含光吸收 层105具有台面结构，台面的侧壁设置有覆盖侧壁的保护膜113。 保护膜113是含有氢的氮化硅膜，位于台面侧壁侧的保护膜113的一个面的氢浓度低于位于保护膜113的另一面的氢浓度 与台面侧壁相对的一侧。