公开(公告)号：US20080311713A1

公开(公告)日：2008-12-18

申请号：US12185740

申请日：2008-08-04

申请人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

发明人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

IPC分类号： H01L21/8238

CPC分类号： H01L29/1054 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

摘要翻译： 本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。 因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

公开(公告)号：US07741169B2

公开(公告)日：2010-06-22

申请号：US12185740

申请日：2008-08-04

申请人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen Yi Hsieh

发明人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen Yi Hsieh

IPC分类号： H01L21/8238 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

摘要翻译： 本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。 因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

公开(公告)号：US20070069298A1

公开(公告)日：2007-03-29

申请号：US11324085

申请日：2005-12-29

申请人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen Hsieh

发明人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen Hsieh

IPC分类号： H01L23/62

CPC分类号： H01L29/1054 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

摘要翻译： 本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。 因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

公开(公告)号：US6046109A

公开(公告)日：2000-04-04

申请号：US998734

申请日：1997-12-29

申请人： Chungpin Liao ,  Denny D. Tang ,  Shin-Chii Lu

发明人： Chungpin Liao ,  Denny D. Tang ,  Shin-Chii Lu

IPC分类号： B01J19/12 ,  H01L21/263 ,  H01L21/265 ,  H01L21/322 ,  H01L21/76 ,  H01L27/08 ,  H01L21/302

CPC分类号： H01L21/76 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221

摘要： The present invention solves the problem of how to form local regions of semi-insulating material within a single crystal substrate. It does this by irradiating the semiconductor with a high energy beam capable of producing radiation damage along its path. As a consequence of such radiation damage the resistivity of the semiconductor in the irradiated area is increased by several orders of magnitude, causing it to become semi-insulating. Semi-insulating regions of this type are effective as electrically isolating regions and can be used, for example, to decouple analog from digital circuits or to maintain high Q in integrated inductors after these devices have been made. The radiation used could be electromagnetic (such as X-rays or gamma rays) or it could comprise energetic particles such as protons, deuterons, etc. Confinement of the beam to local regions within the semiconductor is accomplished by means of suitable masks.

摘要翻译： 本发明解决了如何在单晶衬底内形成半绝缘材料的局部区域的问题。 它通过用能够沿其路径产生辐射损伤的高能量束照射半导体来实现。 作为这种辐射损伤的结果，照射区域中的半导体的电阻率增加几个数量级，导致其变成半绝缘。 这种类型的半绝缘区域作为电绝缘区域是有效的，并且可以用于例如在模拟器件被制造之后，使模拟与数字电路分离或者在集成电感器中保持高Q。 所使用的辐射可以是电磁的（例如X射线或γ射线），或者它可以包括能量粒子，例如质子，氘核等。通过合适的掩模实现束到半导体内的局部区域的限制。