摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
摘要:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
摘要:
A γ-ray signal processing section 60′ determines a detection time of a γ ray based on a α-ray detection signal outputted from a semiconductor radiation detector for detecting the γ ray, and determines the energy of the γ ray. Then, a time correction circuit 70 obtains, based on the energy of the γ ray, a detection value of the detection time that corresponds to the energy of the γ ray from a time correction table indicating the relationship between the energy of the γ ray and the correction value of the detection time of the γ ray, and corrects the detection time according to the obtained correction value of the detection time. Coincidence counting is performed on the γ ray in a coincidence counting circuit 80 based on the corrected detection time.
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
摘要:
An X-ray CT image of a low spatial resolution image is acquired by employing a PET-X-ray CT examination apparatus. Also, a PET image is acquired by employing the PET-X-ray CT examination apparatus. Furthermore, an X-ray CT image of a high spatial resolution image is acquired by employing another X-ray CT examination apparatus. Then, the X-ray CT image equal to the low spatial resolution image is corrected by employing the X-ray CT image, so that an X-ray CT image equal to a high spatial resolution image is obtained. Since a positional relationship of the resulting X-ray CT image with respect to the PET image can be grasped, this PET image can be simply synthesized with the X-ray CT image like an image.
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
摘要:
A radiation imaging apparatus with high spatial resolution including semiconductor radiation detectors arranged on a wiring board capable of detecting γ-rays by separating their positions in the direction of incidence of γ-rays is provided. A semiconductor radiation detector is constructed by including five semiconductor devices made up of, for example, CdTe rectangular parallelepiped plates, a cathode electrode on one side of the semiconductor device, an anode electrode on the other side of the semiconductor device and an insulator for coating five semiconductor detection devices from the outside. The semiconductor radiation detector is mounted on a wiring board using an anode pin and a cathode pin.
摘要:
The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.
摘要:
The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.
摘要:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).