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    Coincidence counting method of gamma ray and nuclear medicine diagnostic apparatus
    3.
    发明申请
    Coincidence counting method of gamma ray and nuclear medicine diagnostic apparatus 失效
    伽马射线和核医学诊断仪器的一致性计数方法

    公开(公告)号：US20060192127A1

    公开(公告)日：2006-08-31

    申请号：US11405626

    申请日：2006-04-18

    申请人： Norihito Yanagita ,  Yuuichirou Ueno ,  Kensuke Amemiya ,  Hiroshi Kitaguchi ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi ,  Takafumi Ishitsu

    发明人： Norihito Yanagita ,  Yuuichirou Ueno ,  Kensuke Amemiya ,  Hiroshi Kitaguchi ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi ,  Takafumi Ishitsu

    IPC分类号： G01T1/164

    CPC分类号： G01T1/172

    摘要： A γ-ray signal processing section 60′ determines a detection time of a γ ray based on a α-ray detection signal outputted from a semiconductor radiation detector for detecting the γ ray, and determines the energy of the γ ray. Then, a time correction circuit 70 obtains, based on the energy of the γ ray, a detection value of the detection time that corresponds to the energy of the γ ray from a time correction table indicating the relationship between the energy of the γ ray and the correction value of the detection time of the γ ray, and corrects the detection time according to the obtained correction value of the detection time. Coincidence counting is performed on the γ ray in a coincidence counting circuit 80 based on the corrected detection time.

    摘要翻译： 伽马射线信号处理部60'基于从用于检测伽马射线的半导体辐射检测器输出的α射线检测信号来确定伽马射线的检测时间，并且确定伽马射线的能量。 然后，时间校正电路70根据伽马射线的能量，从表示伽马射线的能量与γ射线的能量的关系的时刻校正表，求出与γ射线的能量对应的检测时间的检测值 伽马射线的检测时间的校正值，并根据获得的检测时间的校正值来校正检测时间。 基于校正的检测时间，在重合计数电路80中对伽马射线进行一致性计数。

    Semiconductor radiation detector and radiological imaging apparatus
    7.
    发明申请
    Semiconductor radiation detector and radiological imaging apparatus 审中-公开
    半导体辐射探测器和放射成像设备

    公开(公告)号：US20070152163A1

    公开(公告)日：2007-07-05

    申请号：US11717736

    申请日：2007-03-14

    申请人： Norihito Yanagita ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi

    发明人： Norihito Yanagita ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi

    IPC分类号： G01T1/24

    CPC分类号： G01T1/2928 ,  A61B6/037

    摘要： A radiation imaging apparatus with high spatial resolution including semiconductor radiation detectors arranged on a wiring board capable of detecting γ-rays by separating their positions in the direction of incidence of γ-rays is provided. A semiconductor radiation detector is constructed by including five semiconductor devices made up of, for example, CdTe rectangular parallelepiped plates, a cathode electrode on one side of the semiconductor device, an anode electrode on the other side of the semiconductor device and an insulator for coating five semiconductor detection devices from the outside. The semiconductor radiation detector is mounted on a wiring board using an anode pin and a cathode pin.

    摘要翻译： 提供了具有高空间分辨率的辐射成像装置，其包括布置在能够通过在伽马射线入射方向上分离它们的位置来检测伽马射线的布线板上的半导体辐射检测器。 半导体辐射检测器通过包括由例如CdTe长方体板构成的五个半导体器件，半导体器件的一侧上的阴极电极，半导体器件的另一侧的阳极电极和用于涂覆的绝缘体 五个半导体检测装置来自外部。 半导体辐射检测器使用阳极引脚和阴极引脚安装在布线板上。

    Semiconductor radiation detector and radiation detection apparatus
    8.
    发明授权
    Semiconductor radiation detector and radiation detection apparatus 有权
    半导体辐射探测器和放射线检测仪

    公开(公告)号：US07157716B2

    公开(公告)日：2007-01-02

    申请号：US11045153

    申请日：2005-01-31

    申请人： Hiroshi Kitaguchi ,  Kensuke Amemiya ,  Kazuma Yokoi ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima ,  Keitaro Hitomi ,  Tadayoshi Shoji

    发明人： Hiroshi Kitaguchi ,  Kensuke Amemiya ,  Kazuma Yokoi ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima ,  Keitaro Hitomi ,  Tadayoshi Shoji

    IPC分类号： G01T1/24

    CPC分类号： G01T1/24

    摘要： The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

    摘要翻译： 本发明提供能够提高能量分辨率的半导体辐射检测器和放射线检测装置，并且半导体辐射检测装置包括处理从半导体辐射检测器输出的放射线检测信号的半导体辐射检测器和信号处理电路。 半导体辐射检测器设置有阳极电极A和阴极电极C，阴极电极C设置成彼此面对并配置有放置在其间的半导体辐射检测元件。 半导体辐射检测元件由含有三价铊（例如三溴生铊）的含沙红石的单晶组成。 含有这种半导体辐射检测元件的半导体辐射检测器减少单晶中的晶格缺陷从而增加电荷收集效率。

    Semiconductor radiation detector and radiation detection apparatus
    9.
    发明申请
    Semiconductor radiation detector and radiation detection apparatus 有权
    半导体辐射探测器和放射线检测仪

    公开(公告)号：US20060065847A1

    公开(公告)日：2006-03-30

    申请号：US11045153

    申请日：2005-01-31

    申请人： Hiroshi Kitaguchi ,  Kensuke Amemiya ,  Kazuma Yokoi ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima ,  Keitaro Hitomi ,  Tadayoshi Shoji

    发明人： Hiroshi Kitaguchi ,  Kensuke Amemiya ,  Kazuma Yokoi ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima ,  Keitaro Hitomi ,  Tadayoshi Shoji

    IPC分类号： G01T1/24

    CPC分类号： G01T1/24

    摘要： The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

    摘要翻译： 本发明提供能够提高能量分辨率的半导体辐射检测器和放射线检测装置，并且半导体辐射检测装置包括处理从半导体辐射检测器输出的放射线检测信号的半导体辐射检测器和信号处理电路。 半导体辐射检测器设置有阳极电极A和阴极电极C，阴极电极C设置成彼此面对并配置有放置在其间的半导体辐射检测元件。 半导体辐射检测元件由含有三价铊（例如三溴生铊）的含沙红石的单晶组成。 含有这种半导体辐射检测元件的半导体辐射检测器减少单晶中的晶格缺陷从而增加电荷收集效率。