摘要:
A positive-type photoresist composition is described as including:(1) an alkali-soluble phenol novolak having a degree of dispersion of from 1.5 to 4.0;(2) a 1,2-quinone diazide compound; and(3) from 2 to 30% by weight, based on the above-mentioned novolak, of a low molecular weight compound having a total of from 12 to 50 carbon atoms per molecule and 2 to 8 phenolic hydroxyl groups per molecule. The degree of dispersion is determined from a weight-average molecular weight of the novolak and a number-average molecular weight of the novolak, both the weight-average and number-average molecular weights being obtained by gel penetration chromatography (GPC) defined by using standard polystyrene as a reference, such that the degree of dispersion is a ratio of the weight-average molecular weight to the number average molecular weight.The positive-type photoresist composition of the present invention is excellent in development latitude and has a high sensitivity and a high resolving power. Thus, it is suitable for use in, for example, the production of semiconductors such as integrated circuits, the production of circuit substrates for thermal heads, and photofabrication processes.
摘要:
A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt % to 0 wt %.The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.
摘要:
A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.
摘要:
A positive type photoresist composition which comprises an alkali soluble novolak resin and at least one light-sensitive material represented by the following general formulae (I) to (IV) to provide a resist pattern with high resolution, high reproduction fidelity, desirable sectional shape, wide latitude of development, high heat resistance and high storage stability: ##STR1## (wherein X represents --CO--, or --SO.sub.2 --; p represents an integer from 2 to 4; R's may be the same or different, each being --H, --OH, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted acyl group, a substituted or unsubstituted acyloxy group, ##STR2## provided that R always contains at least one of ##STR3## ; R.sub.1 represents ##STR4## a substituted or unsubstituted di- to tetra-valent alkyl group, or a substituted or unsubstituted di- to tetra-valent aromatic group; and l, m and n Represent O or an integer of from 1 to 3, provided that at least one of them is not zero).
摘要:
Provided is a positive working photoresist composition which comprises an alkali-soluble resin and a 1,2-quinonediazide compound, with the resin being a novolak resin obtained by the condensation reaction of monomers comprising specified phenol compounds with formaldehyde.
摘要:
Provided is a positive photoresist composition comprising (A) an alkali-soluble resin prepared by condensation of aldehydes and a mixture of phenols, which comprises (i) thymol, isothymol or a thymol-isothymol mixture and (ii) one or more of a phenol compound represented by the following formula (I); ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different, and each of them represents a hydrogen atom or a methyl group, and optionally, as a third monomer, (iii) a phenol compound other than m-cresol; (B) 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic acid esters as photosensitive agent; and (C) a low molecular weight compound having from 12 to 50 carbon atoms in all and from 2 to 8 phenolic hydroxy groups.
摘要:
A light-sensitive resin composition comprising a light-sensitive substance represented by the formula (A) shown below and an alkali-soluble resin: ##STR1## wherein R.sub.1 to R.sub.8 are independently hydrogen, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an aralkyl group, an aryl group, an amino group, a monoalkylamino group, a dialkylamino group, an acylamino group, an alkylcarbamoyl group, an arylcarbamoyl group, an alkylsulfamoyl group, an arylsulfamoyl group, a carboxyl group, a cyano group, a nitro group, an acyl group, an alkyloxycarbonyl group, an aryloxycarbonyl group, an acyloxy group, -OD, or ##STR2## (wherein R is hydrogen, or an alkyl group, and D is a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group);R.sub.9 to R.sub.12 are independently hydrogen or a lower alkyl group; andZ is oxygen or a single bond; provided that at least one of R.sub.1 to R.sub.8 is -OD or ##STR3##
摘要:
A method for debindering of powder molded body, including dipping, in an extracting solution an aqueous surfactant solution, a ceramic powder or metal powder molded body containing a binder with at least two kinds of binder components, to selectively extract and remove at least one kind of binder component from the molded body, and then removing the binder components remaining in the molded body after extraction. This debindering method permits rapid debindering while preventing the generation of defects such as cracks and the like, is highly safe to human health and environment, and requires a low facility cost.
摘要:
As shown in FIG. 1A, a first resist film 2 comprising organic high molecules and a second resist film 3 comprising a photosensitive material are sequentially applied to a substrate 1 by the spin coat method or the spray method for forming a two-layer resist. Then, a mask 4 with which a metallic fine opening pattern 6 is formed on a mask substrate 5 comprising a dielectric, such as glass, is tightly contacted with the two-layer resist. Then, light is projected onto the back of the mask substrate to carry out exposure with near field light 7 which is effused from the opening portions of the mask 4 where no metal is formed. Then, a pattern is formed by processing the second resist layer 3 for development with a developing solution. Thereafter, with the pattern in the second resist layer 3 being used as a mask, the first resist layer 2 is dry-etched with O2 plasma to form a fine pattern having a high aspect ratio, and with the pattern in the two-layer resist, the substrate is worked by etching, vapor deposition, or the like, before the two-layer resist is peeled off.
摘要:
A photographic element comprised of a support having provided thereon at least one silver halide emulsion layer, the element containing a development inhibitor precursor. The development inhibitor precursor is represented by the following general formula (I): ##STR1## wherein A represents an unsubstituted or substituted phenyl group or a 5-membered or 6-membered nitrogen-containing heterocyclic ring; R.sup.1 represents a hydrogen atom or a monovalent substituent; and R.sup.2 represents an organic ballasting group. The element is capable of providing color images having improved image quality particularly with respect to having a low density in the Dmin areas. The photographic element can be processed over a wide range of processing temperatures. Further, the element can be preserved for long periods of time without having a reduction in the density in the Dmax areas.