Positive-type photoresist composition
    1.
    发明授权
    Positive-type photoresist composition 失效
    正型光致抗蚀剂组合物

    公开(公告)号:US5340686A

    公开(公告)日:1994-08-23

    申请号:US173924

    申请日:1993-12-28

    CPC分类号: G03F7/0226 G03F7/0236

    摘要: A positive-type photoresist composition is described as including:(1) an alkali-soluble phenol novolak having a degree of dispersion of from 1.5 to 4.0;(2) a 1,2-quinone diazide compound; and(3) from 2 to 30% by weight, based on the above-mentioned novolak, of a low molecular weight compound having a total of from 12 to 50 carbon atoms per molecule and 2 to 8 phenolic hydroxyl groups per molecule. The degree of dispersion is determined from a weight-average molecular weight of the novolak and a number-average molecular weight of the novolak, both the weight-average and number-average molecular weights being obtained by gel penetration chromatography (GPC) defined by using standard polystyrene as a reference, such that the degree of dispersion is a ratio of the weight-average molecular weight to the number average molecular weight.The positive-type photoresist composition of the present invention is excellent in development latitude and has a high sensitivity and a high resolving power. Thus, it is suitable for use in, for example, the production of semiconductors such as integrated circuits, the production of circuit substrates for thermal heads, and photofabrication processes.

    摘要翻译: 正型光致抗蚀剂组合物包括:(1)分散度为1.5〜4.0的碱溶性酚醛清漆; (2)1,2-醌二叠氮化合物; 和(3)基于上述酚醛清漆的2至30重量%的每分子具有总共12至50个碳原子的低分子量化合物和每分子2至8个酚羟基。 分散度由酚醛清漆的重均分子量和酚醛清漆的数均分子量确定,通过使用通过凝胶渗透色谱法(GPC)得到的重均分子量和数均分子量均为 标准聚苯乙烯作为参考,使得分散度是重均分子量与数均分子量的比率。 本发明的正型光致抗蚀剂组合物的显影宽度优良,灵敏度高,分辨率高。 因此,适用于例如集成电路等半导体的制造,热敏头的电路基板的制造以及光制造工序。

    Positive photoresist composition
    2.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5565300A

    公开(公告)日:1996-10-15

    申请号:US647904

    申请日:1991-01-30

    摘要: A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt % to 0 wt %.The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.

    摘要翻译: 公开了含有碱溶性树脂和通过多羟基化合物和(a)1,2-萘醌二叠氮基-5-(和/或-4-)磺酰氯反应获得的光敏物质的光致抗蚀剂组合物,所述光致抗蚀剂组合物 感光性物质为光敏性化合物(1)〜(3)的混合物:(1)每分子具有至少一个羟基并且具有1,2-萘醌二叠氮基-5-(和/或-4 - )磺酰氯磺酸盐基团,其含量为50重量%以上的含有3〜20重量份的光敏物质的羟基; (2)感光性物质中含有多重羟基化合物中的全部羟基的化合物为感光性物质中的含量为30重量%〜0重量%的感光性化合物, 和(3)感光性物质中含有20重量%〜0重量%的含有3个以上不具有每分子1,2-萘醌二氮杂磺酰基酯化的羟基的感光性化合物。 该组合物适用于用g射线,i射线和准分子激光曝光以提供清晰的抗蚀剂图像。 光致抗蚀剂组合物还具有高灵敏度,高分辨能力,精确的再现性,以提供具有良好的截面形状,宽的显影宽度,高耐热性和良好的储存稳定性的抗蚀剂图像。

    Positive-working photoresist composition

    公开(公告)号:US5173389A

    公开(公告)日:1992-12-22

    申请号:US514811

    申请日:1990-04-26

    CPC分类号: G03F7/022

    摘要: A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.

    Positive-type photoresist composition
    4.
    发明授权
    Positive-type photoresist composition 失效
    正型光致抗蚀剂组合物

    公开(公告)号:US5248582A

    公开(公告)日:1993-09-28

    申请号:US987562

    申请日:1992-12-08

    IPC分类号: G03F7/022

    CPC分类号: G03F7/022

    摘要: A positive type photoresist composition which comprises an alkali soluble novolak resin and at least one light-sensitive material represented by the following general formulae (I) to (IV) to provide a resist pattern with high resolution, high reproduction fidelity, desirable sectional shape, wide latitude of development, high heat resistance and high storage stability: ##STR1## (wherein X represents --CO--, or --SO.sub.2 --; p represents an integer from 2 to 4; R's may be the same or different, each being --H, --OH, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted acyl group, a substituted or unsubstituted acyloxy group, ##STR2## provided that R always contains at least one of ##STR3## ; R.sub.1 represents ##STR4## a substituted or unsubstituted di- to tetra-valent alkyl group, or a substituted or unsubstituted di- to tetra-valent aromatic group; and l, m and n Represent O or an integer of from 1 to 3, provided that at least one of them is not zero).

    摘要翻译: 一种正型光致抗蚀剂组合物,其包含碱溶性酚醛清漆树脂和由以下通式(I)至(IV)表示的至少一种感光材料,以提供具有高分辨率,高再现保真度,期望的截面形状的抗蚀剂图案, 宽范围的发展,高耐热性和高储存稳定性:其中X表示-CO-或-SO 2 - ;其中X表示-CO-或-SO 2 - ; p表示2至4的整数; R可以相同或不同,各自为-H,-OH,取代或未取代的烷基,取代或未取代的烷氧基,取代或未取代的芳基,取代或未取代的 芳烷基,取代或未取代的酰基,取代或未取代的酰氧基,条件是R总是包含至少一个; R 1表示取代或未取代的二价至四价的烷基 ,或替代或未授权 抽出二价至四价芳基; 和l,m和n表示O或1至3的整数,条件是它们中的至少一个不为零)。

    Positive working photoresist composition
    5.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5652081A

    公开(公告)日:1997-07-29

    申请号:US708676

    申请日:1996-09-05

    IPC分类号: G03F7/023

    CPC分类号: G03F7/0236

    摘要: Provided is a positive working photoresist composition which comprises an alkali-soluble resin and a 1,2-quinonediazide compound, with the resin being a novolak resin obtained by the condensation reaction of monomers comprising specified phenol compounds with formaldehyde.

    摘要翻译: 提供了一种正性光致抗蚀剂组合物,其包含碱溶性树脂和1,2-醌二叠氮化合物,该树脂是通过使特定的酚化合物与甲醛的单体的缩合反应获得的酚醛清漆树脂。

    Positive photoresist composition
    6.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5683851A

    公开(公告)日:1997-11-04

    申请号:US784469

    申请日:1997-01-17

    CPC分类号: G03F7/0236

    摘要: Provided is a positive photoresist composition comprising (A) an alkali-soluble resin prepared by condensation of aldehydes and a mixture of phenols, which comprises (i) thymol, isothymol or a thymol-isothymol mixture and (ii) one or more of a phenol compound represented by the following formula (I); ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different, and each of them represents a hydrogen atom or a methyl group, and optionally, as a third monomer, (iii) a phenol compound other than m-cresol; (B) 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic acid esters as photosensitive agent; and (C) a low molecular weight compound having from 12 to 50 carbon atoms in all and from 2 to 8 phenolic hydroxy groups.

    摘要翻译: 本发明提供了一种正性光致抗蚀剂组合物,其包含(A)通过醛和酚的混合物制备的碱溶性树脂,其包含(i)百里酚,异百草酚或百里酚 - 同种异黄醇混合物和(ii)一种或多种苯酚 由下式(I)表示的化合物; (I)其中R1,R2和R3相同或不同,并且它们各自表示氢原子或甲基,任选地,作为第三单体,(iii)除了间甲酚之外的酚化合物 ; (B)1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯作为感光剂; 和(C)全部和2-8个酚羟基具有12至50个碳原子的低分子量化合物。

    Light-sensitive resin composition with 1,2-naphthoquinone diazide
compound having spirobichroman or spirobiinoane ring
    7.
    发明授权
    Light-sensitive resin composition with 1,2-naphthoquinone diazide compound having spirobichroman or spirobiinoane ring 失效
    具有螺二溴或螺二炔环的1,2-萘醌二叠氮化合物的感光树脂组合物

    公开(公告)号:US4883739A

    公开(公告)日:1989-11-28

    申请号:US245190

    申请日:1988-09-16

    CPC分类号: G03F7/022

    摘要: A light-sensitive resin composition comprising a light-sensitive substance represented by the formula (A) shown below and an alkali-soluble resin: ##STR1## wherein R.sub.1 to R.sub.8 are independently hydrogen, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an aralkyl group, an aryl group, an amino group, a monoalkylamino group, a dialkylamino group, an acylamino group, an alkylcarbamoyl group, an arylcarbamoyl group, an alkylsulfamoyl group, an arylsulfamoyl group, a carboxyl group, a cyano group, a nitro group, an acyl group, an alkyloxycarbonyl group, an aryloxycarbonyl group, an acyloxy group, -OD, or ##STR2## (wherein R is hydrogen, or an alkyl group, and D is a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group);R.sub.9 to R.sub.12 are independently hydrogen or a lower alkyl group; andZ is oxygen or a single bond; provided that at least one of R.sub.1 to R.sub.8 is -OD or ##STR3##

    Method for debindering of powder molded body
    8.
    发明授权
    Method for debindering of powder molded body 失效
    粉末成型体脱粘方法

    公开(公告)号:US06649106B2

    公开(公告)日:2003-11-18

    申请号:US10070553

    申请日:2002-03-07

    IPC分类号: B29B1500

    摘要: A method for debindering of powder molded body, including dipping, in an extracting solution an aqueous surfactant solution, a ceramic powder or metal powder molded body containing a binder with at least two kinds of binder components, to selectively extract and remove at least one kind of binder component from the molded body, and then removing the binder components remaining in the molded body after extraction. This debindering method permits rapid debindering while preventing the generation of defects such as cracks and the like, is highly safe to human health and environment, and requires a low facility cost.

    摘要翻译: 一种粉末成型体的脱粘方法,包括在萃取溶液中浸渍表面活性剂水溶液,含有粘合剂的陶瓷粉末或金属粉末成型体至少具有两种粘合剂成分,以选择性地提取和除去至少一种 的粘合剂成分,然后在萃取后除去留在成型体中的粘合剂成分。 这种脱粘方法允许快速脱粘,同时防止诸如裂纹等的缺陷的产生对人体健康和环境是高度安全的,并且需要低设备成本。

    Fine pattern forming method
    9.
    发明授权
    Fine pattern forming method 失效
    精细图案形成方法

    公开(公告)号:US06497996B1

    公开(公告)日:2002-12-24

    申请号:US09562076

    申请日:2000-05-01

    IPC分类号: G03F736

    CPC分类号: G03F7/095 G03F7/0757

    摘要: As shown in FIG. 1A, a first resist film 2 comprising organic high molecules and a second resist film 3 comprising a photosensitive material are sequentially applied to a substrate 1 by the spin coat method or the spray method for forming a two-layer resist. Then, a mask 4 with which a metallic fine opening pattern 6 is formed on a mask substrate 5 comprising a dielectric, such as glass, is tightly contacted with the two-layer resist. Then, light is projected onto the back of the mask substrate to carry out exposure with near field light 7 which is effused from the opening portions of the mask 4 where no metal is formed. Then, a pattern is formed by processing the second resist layer 3 for development with a developing solution. Thereafter, with the pattern in the second resist layer 3 being used as a mask, the first resist layer 2 is dry-etched with O2 plasma to form a fine pattern having a high aspect ratio, and with the pattern in the two-layer resist, the substrate is worked by etching, vapor deposition, or the like, before the two-layer resist is peeled off.

    摘要翻译: 如图所示。 如图1A所示,通过旋涂法或用于形成双层抗蚀剂的喷涂方法将包含有机高分子的第一抗蚀剂膜2和包含感光材料的第二抗蚀剂膜3依次施加到基板1上。 然后,在包括诸如玻璃的电介质的掩模基板5上形成有金属细孔图案6的掩模4与双层抗蚀剂紧密接触。 然后,将光投射到掩模基板的背面上,以从未形成金属的掩模4的开口部分流出的近场光7进行曝光。 然后,通过用显影液处理用于显影的第二抗蚀剂层3来形成图案。 此后,利用第二抗蚀剂层3中的图案作为掩模,用O 2等离子体干蚀刻第一抗蚀剂层2,以形成具有高纵横比的精细图案,并且在两层抗蚀剂中的图案 在剥离两层抗蚀剂之前,通过蚀刻,蒸镀等进行基板的加工。

    Photographic elements with development inhibitor precursor
    10.
    发明授权
    Photographic elements with development inhibitor precursor 失效
    摄影元素与开发抑制剂前体

    公开(公告)号:US4511644A

    公开(公告)日:1985-04-16

    申请号:US560054

    申请日:1983-12-09

    摘要: A photographic element comprised of a support having provided thereon at least one silver halide emulsion layer, the element containing a development inhibitor precursor. The development inhibitor precursor is represented by the following general formula (I): ##STR1## wherein A represents an unsubstituted or substituted phenyl group or a 5-membered or 6-membered nitrogen-containing heterocyclic ring; R.sup.1 represents a hydrogen atom or a monovalent substituent; and R.sup.2 represents an organic ballasting group. The element is capable of providing color images having improved image quality particularly with respect to having a low density in the Dmin areas. The photographic element can be processed over a wide range of processing temperatures. Further, the element can be preserved for long periods of time without having a reduction in the density in the Dmax areas.

    摘要翻译: 由在其上提供有至少一个卤化银乳剂层的支撑体组成的照相元件,该元件含有显影抑制剂前体。 开发抑制剂前体由以下通式(I)表示:其中A表示未取代或取代的苯基或5元或6元含氮杂环; R1表示氢原子或一价取代基; R2表示有机压载组。 该元件能够提供具有改善的图像质量的彩色图像,特别是关于在Dmin区域中具有低密度。 可以在宽范围的加工温度下处理照相元件。 此外,元件可以长期保存,而不会降低Dmax区域中的密度。