公开(公告)号：US20120032160A1

公开(公告)日：2012-02-09

申请号：US13280596

申请日：2011-10-25

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI ,  Kaoru KATO

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI ,  Kaoru KATO

IPC分类号： H01L51/30

CPC分类号： C07D209/88 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0508

摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

摘要翻译： 本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。 在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物 ） 用来。 通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

公开(公告)号：US20120199839A1

公开(公告)日：2012-08-09

申请号：US13447446

申请日：2012-04-16

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L51/52

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的有机晶体管。 本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。 根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层 具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

公开(公告)号：US20110111555A1

公开(公告)日：2011-05-12

申请号：US13010395

申请日：2011-01-20

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US20100297809A1

公开(公告)日：2010-11-25

申请号：US12850652

申请日：2010-08-05

申请人： Ryota IMAHAYASHI ,  Shinobu FURUKAWA ,  Atsuo ISOBE ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Ryota IMAHAYASHI ,  Shinobu FURUKAWA ,  Atsuo ISOBE ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L51/40

CPC分类号： H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

摘要翻译： 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

公开(公告)号：US20090267077A1

公开(公告)日：2009-10-29

申请号：US12498512

申请日：2009-07-07

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L33/00 ,  H01L31/12

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的有机晶体管。 本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。 根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层 具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

公开(公告)号：US20100136740A1

公开(公告)日：2010-06-03

申请号：US12699962

申请日：2010-02-04

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US20060237731A1

公开(公告)日：2006-10-26

申请号：US11379014

申请日：2006-04-17

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L31/12

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

公开(公告)号：US20100151621A1

公开(公告)日：2010-06-17

申请号：US12683193

申请日：2010-01-06

申请人： Yoshiharu HIRAKATA ,  Tetsuji ISHITANI ,  Shuji FUKAI ,  Ryota IMAHAYASHI

发明人： Yoshiharu HIRAKATA ,  Tetsuji ISHITANI ,  Shuji FUKAI ,  Ryota IMAHAYASHI

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  G02F1/1368 ,  G02F2202/025 ,  H01L51/0002 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0051 ,  H01L51/0053

摘要： In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

摘要翻译： 在制造使用有机TFT的器件时，必须开发通道长度短或沟道宽度窄的元件，以减小器件的尺寸。 基于上述，本发明的目的是提供一种改进了特性的有机TFT。 鉴于上述问题，本发明的一个特征是在沉积有机半导体膜之后烘烤元件。 更具体地，本发明的一个特征是有机半导体膜在大气压或减压下加热。 此外，烘烤过程可以在惰性气体气氛中进行。

公开(公告)号：US20110215326A1

公开(公告)日：2011-09-08

申请号：US13037547

申请日：2011-03-01

申请人： Hiromichi GODO ,  Ryota IMAHAYASHI ,  Kiyoshi KATO

发明人： Hiromichi GODO ,  Ryota IMAHAYASHI ,  Kiyoshi KATO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78636 ,  H01L29/7869

摘要： Disclosed is a semiconductor device including: an insulating layer; a source electrode and a drain electrode embedded in the insulating layer; an oxide semiconductor layer in contact and over the insulating layer, the source electrode, and the drain electrode; a gate insulating layer over and covering the oxide semiconductor layer; and a gate electrode over the gate insulating layer, where the upper surfaces of the insulating layer, the source electrode, and the drain electrode exist coplanarly. The upper surface of the insulating layer, which is in contact with the oxide semiconductor layer, has a root-mean-square (RMS) roughness of 1 nm or less, and the difference in height between the upper surface of the insulating layer and the upper surface of the source electrode or the drain electrode is less than 5 nm. This structure contributes to the suppression of defects of the semiconductor device and enables their miniaturization.

摘要翻译： 公开了一种半导体器件，包括：绝缘层; 源极电极和漏电极，嵌入绝缘层中; 与所述绝缘层，所述源极电极和所述漏电极接触的氧化物半导体层; 覆盖氧化物半导体层的栅极绝缘层; 以及栅极绝缘层上的栅电极，其中绝缘层，源电极和漏电极的上表面共面存在。 与氧化物半导体层接触的绝缘层的上表面的均方根（RMS）粗糙度为1nm以下，绝缘层的上表面与 源电极或漏电极的上表面小于5nm。 这种结构有助于抑制半导体器件的缺陷并使其能够小型化。

公开(公告)号：US20100062546A1

公开(公告)日：2010-03-11

申请号：US12550520

申请日：2009-08-31

申请人： Yuta ENDO ,  Ryota IMAHAYASHI ,  Ryosuke MURATA

发明人： Yuta ENDO ,  Ryota IMAHAYASHI ,  Ryosuke MURATA

IPC分类号： H01L21/66 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L22/12 ,  H01L22/20

摘要： An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate.

摘要翻译： 本发明的目的是提高半导体衬底的使用效率，而不会降低制造工艺的效率。 本发明的另一个目的是通过有效地利用在制造SOI衬底的过程中重复使用而减小厚度的半导体衬底来实现成本降低。 在制造SOI衬底的过程中，半导体衬底作为接合衬底使用预定次数，或者只要满足预定条件即可。 在第一单晶半导体衬底不能用作接合衬底的情况下，其结合到第二单晶半导体衬底。 然后，在制造SOI衬底的过程中，使用由第一单晶半导体衬底和彼此接合的第二单晶半导体衬底形成的叠层衬底作为接合衬底。