摘要:
An output circuit of a solid state imaging device comprises: a source follower circuit that amplifies a voltage value signal converted by a charge detecting portion in accordance with an amount of a signal charge stored by each of pixels and outputs the amplified voltage value signal; a reset transistor that discards the signal charge in the charge detecting portion, which had been subjected to formation of the voltage value signal, to a reset drain in an application of a reset pulse; a bias voltage generating circuit that applies a bias voltage, generated from a power supply, through a resistor to a gate of the reset transistor to which the reset pulse is applied from a reset pulse generating circuit through a coupling capacitor; and a protecting device that applies a voltage of the power supply to a node of the gate and the coupling capacitor to charge the coupling capacitor by the power supply when the power supply is turned ON.
摘要:
A decorating method includes the steps of coating a base material with a coating composition comprising 45-95 parts of urethane methacrylate, 1-50 parts of a compound having at least an intra-molecular radical polymeric double bond, and 0.1-15 parts of photopolymerization initiator. The coating is hardened to form an under coat. Vacuum deposition of indium and/or tin in a crystalline structure-independent way is performed to form a non-conductive thin film. Then, a UV-hardening resin, poly acrylic-urethane resin, or acrylate-silica resin is applied, which is hardened to form a hard coat layer.
摘要:
A decorating method includes the steps of coating a base material with a coating composition comprising 45-95 parts of urethane methacrylate, 1-50 parts of a compound having at least an intra-molecular radical polymeric double bond, and 0.1-15 parts of photopolymerization initiator. The coating is hardened to form an under coat. Vacuum deposition of indium and/or tin in a crystalline structure-independent way is performed to form a non-conductive thin film. Then, a UV-hardening resin, poly acrylic-urethane resin, or acrylate-silica resin is applied, which is hardened to form a hard coat layer.
摘要:
An output circuit of a solid state imaging device comprises: a source follower circuit that amplifies a voltage value signal converted by a charge detecting portion in accordance with an amount of a signal charge stored by each of pixels and outputs the amplified voltage value signal; a reset transistor that discards the signal charge in the charge detecting portion, which had been subjected to formation of the voltage value signal, to a reset drain in an application of a reset pulse; a bias voltage generating circuit that applies a bias voltage, generated from a power supply, through a resistor to a gate of the reset transistor to which the reset pulse is applied from a reset pulse generating circuit through a coupling capacitor; and a protecting device that applies a voltage of the power supply to a node of the gate and the coupling capacitor to charge the coupling capacitor by the power supply when the power supply is turned ON.