摘要:
Pixel regions are formed on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner with liquid crystal therebetween, wherein each pixel region includes pixel electrodes having bent portions and counter electrodes which are arranged at positions where the pixel electrodes are shifted in parallel, the pixel electrode and the counter electrode are respectively constituted of two electrodes which are overlapped to each other as an upper layer and a lower layer by way of an insulation film, and to the lower-layer side electrode of at least one electrode out of the pixel electrode and the counter electrode, projections which further project from crests of convex-portion sides of the bent portions and extend toward another electrode side are provided.
摘要:
Pixel regions are formed on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner with liquid crystal therebetween, wherein each pixel region includes pixel electrodes having bent portions and counter electrodes which are arranged at positions where the pixel electrodes are shifted in parallel, the pixel electrode and the counter electrode are respectively constituted of two electrodes which are overlapped to each other as an upper layer and a lower layer by way of an insulation film, and to the lower-layer side electrode of at least one electrode out of the pixel electrode and the counter electrode, projections which further project from crests of convex-portion sides of the bent portions and extend toward another electrode side are provided.
摘要:
Pixel regions are formed on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner with liquid crystal therebetween, wherein each pixel region includes pixel electrodes having bent portions and counter electrodes which are arranged at positions where the pixel electrodes are shifted in parallel, the pixel electrode and the counter electrode are respectively constituted of two electrodes which are overlapped to each other as an upper layer and a lower layer by way of an insulation film, and to the lower-layer side electrode of at least one electrode out of the pixel electrode and the counter electrode, projections which further project from crests of convex-portion sides of the bent portions and extend toward another electrode side are provided.
摘要:
An apparatus for driving a color display panel operating at a high frame frequency. The color display panel driving apparatus includes a line memory for storing data of 1/2 of a line at its odd-numbered addresses and then storing data of the remaining 1/2 of the line at its even-numbered addresses, a first column drive circuit including a shift register to which the data stored at the odd-numbered addresses of the line memory are supplied and which is connected at its bit outputs to column-direction signal wires associated with a left-hand half display area of the display panel, and a second column drive circuit including a shift register to which the data stored at the even-numbered addresses of the line memory are supplied and which is connected at its bit outputs to column-direction signal wires associated with a right-hand half display area of the display panel. After picture data of one line are completely stored in the line memory, the picture data are substantially simultaneously supplied from the odd-numbered and even-numbered addresses of the line memory to the first and second column drive circuits respectively.
摘要:
In a magnetic bubble memory device comprising a number of magnetic bubble propagation bit segments arrayed to form a magnetic bubble propagation path and having each a pattern of a length L in a direction of propagation of magnetic bubbles being less than 3.4 D where D is the average diameter of the magnetic bubbles and is not greater than 2.0.mu., the height H of the pattern of the magnetic bubble propagation bit segments in a direction perpendicular to the propagation direction of magnetic bubbles is set to be in a range of 0.75.times.L.ltorsim.H.ltorsim.1.1.times.L.
摘要:
An active matrix type display device includes inter-pad short-circuiting lines which are connected with signal lines, terminal portions which transmit signals from an IC chip to the signal lines, and a plurality of short-circuiting lines which are arranged outside the terminal portions and inside an end surface of a substrate and are connected with a plurality of inter-pad short-circuiting lines, wherein cut regions of the inter-pad short-circuiting lines are arranged outside the terminal portions and inside the short-circuiting lines. Since repair lines and signal-line lead line do not cross each other, it is possible to perform the highly reliable repair in respective manufacturing steps.
摘要:
In a magnetic bubble memory device comprising a number of magnetic bubble propagation paths each including magnetic bubble propagation bit segments arrayed in the direction of propagation of magnetic bubbles, the propagation paths being arranged in the direction perpendicular to the propagation direction of magnetic bubbles, d/.lambda..sub.x is set to less than 0.2, where .lambda..sub.x is the period of arrangement of the magnetic bubble propagation paths and d is the distance between close adjoining magnetic bubble propagation bit segments of adjacent magnetic bubble propagation paths.
摘要:
An active matrix type display device includes inter-pad short-circuiting lines which are connected with signal lines, terminal portions which transmit signals from an IC chip to the signal lines, and a plurality of short-circuiting lines which are arranged outside the terminal portions and inside an end surface of a substrate and are connected with a plurality of inter-pad short-circuiting lines, wherein cut regions of the inter-pad short-circuiting lines are arranged outside the terminal portions and inside the short-circuiting lines. Since repair lines and signal-line lead line do not cross each other, it is possible to perform the highly reliable repair in respective manufacturing steps.
摘要:
A high-density magnetic bubble memory device using magnetic bubbles having a diameter not larger than 2 .mu.m comprises a magnetic layer capable of sustaining the bubbles therein, and a propagation pattern formed in or on a surface of the magnetic layer. In the device, a relation H/d.ltoreq.0.8 is satisfied wherein H is the thickness of the magnetic layer and d the diameter of the bubble. When the propagation pattern is made of a permalloy, h/d (h: bubble height in that case) is not larger than 0.8. When the propagation pattern is formed through ion implantation, h'/d (h': bubble height in that case) is not larger than 0.6.
摘要:
A hybrid magnetic bubble memory device includes, magnetic bubble propagation tracks formed of partial ion-implantation and bubble propagation tracks formed of a soft magnetic material pattern. At least one of the junctions between the two type tracks is located on a corner soft magnetic material pattern where the bubble propagation direction is changed, and the hairpin conductor is superposed on the part of the corner pattern under which the magnetic material is not ion-implanted to form ion-implanted propagation tracks.