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公开(公告)号：US20080283933A1
公开(公告)日：2008-11-20
申请号：US11803437
申请日：2007-05-15
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号： H01L29/78 , H01L21/31 , H01L21/336 , H01L23/58
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US20100221887A1
公开(公告)日：2010-09-02
申请号：US12779810
申请日：2010-05-13
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号： H01L21/336
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US08759952B2
公开(公告)日：2014-06-24
申请号：US13358365
申请日：2012-01-25
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号： H01L23/58
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US08114741B2
公开(公告)日：2012-02-14
申请号：US12779810
申请日：2010-05-13
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号： H01L21/336
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US20120119303A1
公开(公告)日：2012-05-17
申请号：US13358365
申请日：2012-01-25
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US07741171B2
公开(公告)日：2010-06-22
申请号：US11803437
申请日：2007-05-15
申请人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人： Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号： H01L21/8238
CPC分类号： H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号：US07969708B2
公开(公告)日：2011-06-28
申请号：US11933919
申请日：2007-11-01
申请人： Jung-Chih Tsao , Miao-Cheng Liao , Phil Sun , Kei-Wei Chen
发明人： Jung-Chih Tsao , Miao-Cheng Liao , Phil Sun , Kei-Wei Chen
IPC分类号： H01G4/06
摘要： A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.
摘要翻译： 一种用于形成α-钽层的方法，包括在半导体衬底上设置含氮基底层，用轰击元件轰击含氮基底层，从而形成α-钽种子层，并且在该α层上溅射一层钽 钽籽晶层，从而形成基本上为α-钽的表面层。
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公开(公告)号：US20090116169A1
公开(公告)日：2009-05-07
申请号：US11933919
申请日：2007-11-01
申请人： Jung-Chih Tsao , Miao-Cheng Liao , Phil Sun , Kei-Wei Chen
发明人： Jung-Chih Tsao , Miao-Cheng Liao , Phil Sun , Kei-Wei Chen
摘要： A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.
摘要翻译： 一种用于形成α-钽层的方法，包括在半导体衬底上设置含氮基底层，用轰击元件轰击含氮基底层，从而形成α-钽种子层，并且在该α层上溅射一层钽 钽籽晶层，从而形成基本上为α-钽的表面层。
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