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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20120182695A1

    公开(公告)日：2012-07-19

    申请号：US13428584

    申请日：2012-03-23

    申请人： Shogo MORI ,  Shinobu TAMURA ,  Shinobu YAMAUCHI ,  Taizo KURIBAYASHI

    发明人： Shogo MORI ,  Shinobu TAMURA ,  Shinobu YAMAUCHI ,  Taizo KURIBAYASHI

    IPC分类号： H05K7/20

    CPC分类号： H01L23/367 ,  H01L23/3735 ,  H01L23/473 ,  H01L2924/0002 ,  H05K7/20263 ,  H05K7/2039 ,  H05K7/20518 ,  H01L2924/00

    摘要： A semiconductor device is disclosed that includes an insulation substrate, a metal wiring layer, a semiconductor element, a heat sink, and a stress relaxation member located between the insulation substrate and the heat sink. The heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals. The stress relaxation member includes a stress absorbing portion formed by through holes extending through the entire thickness of the stress relaxation member. Each hole is formed such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the arranging direction of the partitioning walls.

    摘要翻译： 公开了一种半导体器件，其包括绝缘基板，金属布线层，半导体元件，散热器和位于绝缘基板和散热片之间的应力松弛元件。 散热器具有沿一个方向延伸并且间隔地布置的多个分隔壁。 应力缓和构件包括通过延伸穿过应力松弛构件的整个厚度的通孔形成的应力吸收部分。 每个孔形成为使得其沿着分隔壁的纵向的尺寸大于沿着分隔壁的排列方向的尺寸。