公开(公告)号：US20100084746A1

公开(公告)日：2010-04-08

申请号：US12550340

申请日：2009-08-28

申请人： Shoji AKIYAMA ,  Atsuo ITO ,  Yoshihiro KUBOTA ,  Koichi TANAKA ,  Makoto KAWAI ,  Yuuji TOBISAKA

发明人： Shoji AKIYAMA ,  Atsuo ITO ,  Yoshihiro KUBOTA ,  Koichi TANAKA ,  Makoto KAWAI ,  Yuuji TOBISAKA

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/31051 ,  H01L21/76251 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate, heat-treating the laminated substrate and diffusing outwardly the oxide film.

摘要翻译： 提供一种制造叠层基板的方法。 该方法包括：在杨氏模量下，在硬度为150GPa以上的第一基板的至少表面形成氧化膜，然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层，至少通过氧化物膜层压第一基板和第二基板，然后将 在离子注入层中形成第二衬底以形成层压衬底，对层压衬底进行热处理并向外扩散氧化膜。

公开(公告)号：US20080121275A1

公开(公告)日：2008-05-29

申请号：US11976020

申请日：2007-10-19

申请人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Koichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

发明人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Koichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

IPC分类号： H01L31/00 ,  B05D5/12 ,  H05H1/24

CPC分类号： H01L31/186 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate; and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, in a manner that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 对所述单晶硅衬底的离子注入表面中的至少一个进行表面活化处理; 和透明绝缘体基板的表面; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作接合表面; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 在所述单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，其中所述第一导电类型区域和多个第二导电类型区域存在于所述分层的 单晶硅层的表面。 可以提供作为透明型太阳能电池的单晶硅太阳能电池，其包括由具有较高结晶度的单晶硅制成的薄膜光转换层。

公开(公告)号：US20120118354A1

公开(公告)日：2012-05-17

申请号：US13336674

申请日：2011-12-23

申请人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Kouichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

发明人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Kouichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

IPC分类号： H01L31/05

CPC分类号： H01L31/056 ,  H01L21/76254 ,  H01L31/03921 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes.

摘要翻译： 包括至少具有光反射膜，单晶硅层，透明粘合剂层和透明绝缘体基板的叠层的单晶硅太阳能电池; 形成在靠近光反射膜的硅层的表面中的第一导电类型的多个区域和第二导电类型的多个区域; 在所述硅层的平面方向上形成的多个pn结; 多个第一单独电极，各自形成在第一导电类型的多个区域中的每一个上，并且多个第二单独电极分别形成在第二导电类型的多个区域中的每一个区域上; 以及用于连接多个第一单独电极的第一集电极电极和用于连接多个第二单独电极的第二集电极。