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    Chair
    1.
    发明授权
    Chair 有权
    椅子

    公开(公告)号：US08783770B2

    公开(公告)日：2014-07-22

    申请号：US13129897

    申请日：2009-03-11

    申请人： Kouichi Tanaka ,  Hiroki Denmyouji ,  Kiyomi Matsuo

    发明人： Kouichi Tanaka ,  Hiroki Denmyouji ,  Kiyomi Matsuo

    IPC分类号： A61G15/00 ,  A47C7/02 ,  A47C1/034

    CPC分类号： A47C1/0342 ,  A47C7/024 ,  A61G5/006 ,  A61G5/1054 ,  A61G5/1067 ,  A61G5/1075 ,  A61G5/121 ,  A61G5/125 ,  A61G5/127 ,  A61G5/128 ,  A61G2203/74

    摘要： A chair includes: a backrest with a waist support projecting part; a horizontal forward seat; a backward seat pivotally supported so as to be able to swing downward relative to the forward seat; a leg support pivotally supported at a front end of the forward seat; links for changing a positional relation between the rear end of the backward seat and the lower end of the backrest so that a distance from the waist support projecting part to the backward seat is reduced from a standing posture to a tilted posture as the backrest is tilted backward; and a connection link for connecting the lower end of the backrest and a part of the leg support lower than the upper end of the leg support so as to cause the leg support to swing forward as the backrest is tilted backward.

    摘要翻译： 椅子包括：具有腰部支撑突出部分的靠背; 水平前座 枢转地支撑以便能够相对于前座向下摆动的后座; 枢转地支撑在前座的前端的腿支撑件; 用于改变后座椅的后端和靠背的下端之间的位置关系的连杆，使得从腰部支撑突出部到后座的距离随着靠背倾斜而从立姿变为倾斜姿势 落后; 以及用于将靠背的下端和腿部支撑件的一部分连接到腿部支撑件的上端以下的连接连杆，以便当靠背倾斜时使腿部支撑件向前摆动。

    Method for manufacturing bonded wafer
    2.
    发明授权
    Method for manufacturing bonded wafer 有权
    贴合晶圆的制造方法

    公开(公告)号：US08314006B2

    公开(公告)日：2012-11-20

    申请号：US12934788

    申请日：2009-04-10

    申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

    摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

    METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SOLAR CELL AND SINGLE CRYSTAL SILICON SOLAR CELL
    3.
    发明申请
    METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SOLAR CELL AND SINGLE CRYSTAL SILICON SOLAR CELL 审中-公开
    制造单晶硅太阳能电池和单晶硅太阳能电池的方法

    公开(公告)号：US20120118354A1

    公开(公告)日：2012-05-17

    申请号：US13336674

    申请日：2011-12-23

    申请人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Kouichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

    发明人： Atsuo ITO ,  Shoji AKIYAMA ,  Makoto KAWAI ,  Kouichi TANAKA ,  Yuuji TOBISAKA ,  Yoshihiro KUBOTA

    IPC分类号： H01L31/05

    CPC分类号： H01L31/056 ,  H01L21/76254 ,  H01L31/03921 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes.

    摘要翻译： 包括至少具有光反射膜，单晶硅层，透明粘合剂层和透明绝缘体基板的叠层的单晶硅太阳能电池; 形成在靠近光反射膜的硅层的表面中的第一导电类型的多个区域和第二导电类型的多个区域; 在所述硅层的平面方向上形成的多个pn结; 多个第一单独电极，各自形成在第一导电类型的多个区域中的每一个上，并且多个第二单独电极分别形成在第二导电类型的多个区域中的每一个区域上; 以及用于连接多个第一单独电极的第一集电极电极和用于连接多个第二单独电极的第二集电极。

    Method for manufacturing bonded substrate with sandblast treatment
    5.
    发明授权
    Method for manufacturing bonded substrate with sandblast treatment 有权
    喷砂处理方法

    公开(公告)号：US08088670B2

    公开(公告)日：2012-01-03

    申请号：US12081297

    申请日：2008-04-14

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/304 ,  H01L21/30 ,  H01L27/12 ,  H01L21/18

    CPC分类号： H01L21/76254 ,  H01L21/3046 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68359

    摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.

    摘要翻译： 当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于 绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。 提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于 绝缘体基板的背面。

    ENDOSCOPE HOOD
    6.
    发明申请
    ENDOSCOPE HOOD 审中-公开
    内窥镜

    公开(公告)号：US20110245610A1

    公开(公告)日：2011-10-06

    申请号：US13040011

    申请日：2011-03-03

    申请人： Kouichi TANAKA

    发明人： Kouichi TANAKA

    IPC分类号： A61B1/00

    CPC分类号： A61B1/00101 ,  A61B1/00089 ,  A61B1/126 ,  A61B5/0066 ,  A61B5/0084

    摘要： An endoscope hood includes: a hood part placed on a forward side of a part of a periphery of the leading end surface of an insertion part of an endoscope or an entirety of the periphery; an abutment surface formed in the hood part on a surface opposite to a central axis of the insertion part, the abutment surface being formed on a plane which obliquely intersects with the central axis; and a pass-through hole which is formed in the hood part, and allows a probe of the endoscope pushed out from a tube passage exit to pass therethrough from a side of the central axis to a side of the abutment surface in the hood part, wherein the abutment surface is pressed against a region to be measured in a state where the probe has passed through a pass-through hole, to thereby fix the probe to the region to be measured in a state where the probe is abutted thereagainst in an axial direction of the probe.

    摘要翻译： 内窥镜罩包括：罩部，其放置在内窥镜的插入部的前端面的一部分的周边的前方或者周边的整体上; 在与所述插入部的中心轴线相反的表面上形成在所述罩部中的抵接面，所述抵接面形成在与所述中心轴倾斜相交的平面上; 以及形成在所述罩部中的通孔，并且允许从所述管通道出口推出的所述内窥镜的探头从所述中心轴线的一侧通过所述罩部中的所述抵接面的一侧， 其中所述邻接表面在所述探针已经穿过通孔的状态下被压靠在待测区域上，从而将所述探针固定在所述待测区域上，所述状态是所述探针沿轴向抵接的状态 探头方向。

    Method for preparing substrate having monocrystalline film
    7.
    发明授权
    Method for preparing substrate having monocrystalline film 有权
    制备具有单晶膜的衬底的方法

    公开(公告)号：US08030176B2

    公开(公告)日：2011-10-04

    申请号：US12380090

    申请日：2009-02-24

    申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

    发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

    IPC分类号： H01L21/46

    CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

    摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

    摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

    METHOD FOR MANUFACTURING SOI WAFER
    8.
    发明申请
    METHOD FOR MANUFACTURING SOI WAFER 有权
    SOI WAFER制造方法

    公开(公告)号：US20110003462A1

    公开(公告)日：2011-01-06

    申请号：US12920363

    申请日：2009-03-23

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

    IPC分类号： H01L21/306

    CPC分类号： H01L21/76254 ,  H01L21/30608

    摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

    摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 在浸渍的剥离后的SOI晶片上，在900℃以上的温度下进行热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。