Apparatus and method for detecting abnormal air-fuel ratio variation
    5.
    发明授权
    Apparatus and method for detecting abnormal air-fuel ratio variation 有权
    用于检测异常空燃比变化的装置和方法

    公开(公告)号:US08805609B2

    公开(公告)日:2014-08-12

    申请号:US13477647

    申请日:2012-05-22

    IPC分类号: F02D41/14 G01M15/00

    CPC分类号: G01M15/104

    摘要: An apparatus for detecting an abnormal air-fuel ratio variation, includes an abnormality detecting unit that detects an abnormal variation in each of a plurality of fuel injection valves on the basis of an injection ratio between the plurality of fuel injection valves, a fluctuation in the output before the injection ratio is changed and the fluctuation in the output after the injection ratio is changed; and a setting unit that corrects the abnormality determination threshold for each of the plurality of fuel injection valves on the basis of the injection ratio.

    摘要翻译: 用于检测异常空燃比变化的装置包括异常检测单元,其基于多个燃料喷射阀之间的喷射比来检测多个燃料喷射阀中的每一个的异常变化, 在喷射比例变化之前的输出和喷射比之后的输出变化; 以及设定单元,其基于喷射率校正所述多个燃料喷射阀中的每一个的异常判定阈值。

    APPARATUS AND METHOD FOR DETECTING ABNORMAL AIR-FUEL RATIO VARIATION
    6.
    发明申请
    APPARATUS AND METHOD FOR DETECTING ABNORMAL AIR-FUEL RATIO VARIATION 有权
    检测异常空气 - 燃料比变化的装置和方法

    公开(公告)号:US20120297866A1

    公开(公告)日:2012-11-29

    申请号:US13477647

    申请日:2012-05-22

    IPC分类号: G01M15/04

    CPC分类号: G01M15/104

    摘要: An apparatus for detecting an abnormal air-fuel ratio variation, includes an abnormality detecting unit that detects an abnormal variation in each of a plurality of fuel injection valves on the basis of an injection ratio between the plurality of fuel injection valves, a fluctuation in the output before the injection ratio is changed and the fluctuation in the output after the injection ratio is changed; and a setting unit that corrects the abnormality determination threshold for each of the plurality of fuel injection valves on the basis of the injection ratio.

    摘要翻译: 用于检测异常空燃比变化的装置包括异常检测单元,其基于多个燃料喷射阀之间的喷射比来检测多个燃料喷射阀中的每一个的异常变化, 在喷射比例变化之前的输出和喷射比之后的输出变化; 以及设定单元,其基于喷射率校正所述多个燃料喷射阀中的每一个的异常判定阈值。

    Semiconductor device having boosting circuit
    7.
    发明授权
    Semiconductor device having boosting circuit 失效
    具有升压电路的半导体装置

    公开(公告)号:US08633758B2

    公开(公告)日:2014-01-21

    申请号:US13064237

    申请日:2011-03-11

    IPC分类号: G05F1/10 G05F3/02

    摘要: A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.

    摘要翻译: 一种半导体器件包括:升压电路,其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器 电路包括连接到升压电路的输出端子的可变电阻器。 可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

    Supply voltage generating circuit

    公开(公告)号:US08493132B2

    公开(公告)日:2013-07-23

    申请号:US12052422

    申请日:2008-03-20

    IPC分类号: G05F1/10

    摘要: A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

    Varistor and method for manufacturing varistor
    9.
    发明授权
    Varistor and method for manufacturing varistor 有权
    压敏电阻及其制造方法

    公开(公告)号:US08471673B2

    公开(公告)日:2013-06-25

    申请号:US13545505

    申请日:2012-07-10

    IPC分类号: H01C7/10

    摘要: A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

    摘要翻译: 变阻器设置有可变电阻元件主体,多个内部电极,布置在可变电阻元件主体中,以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极,布置在可变电阻元件的表面上 并连接到相应的内部电极。 外部电极具有烧结电极层,该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。 可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

    SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE
    10.
    发明申请
    SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE 有权
    可调节基极电压的半导体器件

    公开(公告)号:US20100164607A1

    公开(公告)日:2010-07-01

    申请号:US12647259

    申请日:2009-12-24

    IPC分类号: G05F1/10

    CPC分类号: G05F3/205 G05F1/46

    摘要: To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.

    摘要翻译: 为了提供一种半导体器件,包括:形成在半导体衬底中并具有要调节的阈值电压的MOS晶体管,MOS晶体管的复制晶体管,监视电路监视当复制晶体管流过具有 给定的设计值,负电压泵浦电路基于监控电路的输出产生MOS晶体管的衬底电压,并且限制电路定义负电压抽运电路的操作,而不管监视的监视结果如何 电路,响应于相对于预定值的衬底电压的过量。