摘要:
An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要:
An apparatus for detecting imbalance abnormality in an air-fuel ratio between cylinders in a multi-cylinder internal combustion engine according to the present invention increases a fuel injection quantity to a predetermined target cylinder to detect imbalance abnormality in an air-fuel ratio between cylinders at least based upon a rotation variation of the target cylinder after increasing the fuel injection quantity. The increase in the fuel injection quantity is carried out in the middle of performing the post-fuel-cut rich control. Since timing of the post-fuel cut rich control is used to increase the fuel injection quantity, the exhaust emission deterioration due to abnormality detection execution can be prevented as much as possible.
摘要:
An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要:
An apparatus for detecting imbalance abnormality in an air-fuel ratio between cylinders in a multi-cylinder internal combustion engine according to the present invention increases a fuel injection quantity to a predetermined target cylinder to detect imbalance abnormality in an air-fuel ratio between cylinders at least based upon a rotation variation of the target cylinder after increasing the fuel injection quantity. The increase in the fuel injection quantity is carried out in the middle of performing the post-fuel-cut rich control. Since timing of the post-fuel cut rich control is used to increase the fuel injection quantity, the exhaust emission deterioration due to abnormality detection execution can be prevented as much as possible.
摘要:
An apparatus for detecting an abnormal air-fuel ratio variation, includes an abnormality detecting unit that detects an abnormal variation in each of a plurality of fuel injection valves on the basis of an injection ratio between the plurality of fuel injection valves, a fluctuation in the output before the injection ratio is changed and the fluctuation in the output after the injection ratio is changed; and a setting unit that corrects the abnormality determination threshold for each of the plurality of fuel injection valves on the basis of the injection ratio.
摘要:
An apparatus for detecting an abnormal air-fuel ratio variation, includes an abnormality detecting unit that detects an abnormal variation in each of a plurality of fuel injection valves on the basis of an injection ratio between the plurality of fuel injection valves, a fluctuation in the output before the injection ratio is changed and the fluctuation in the output after the injection ratio is changed; and a setting unit that corrects the abnormality determination threshold for each of the plurality of fuel injection valves on the basis of the injection ratio.
摘要:
A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要:
A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.
摘要:
A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要:
To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.