Apparatus and method for controlling oscillation output of magnetron
    1.
    发明授权
    Apparatus and method for controlling oscillation output of magnetron 失效
    控制磁控管振荡输出的装置和方法

    公开(公告)号:US5395453A

    公开(公告)日:1995-03-07

    申请号:US215810

    申请日:1994-03-22

    Applicant: Shozo Noda

    Inventor: Shozo Noda

    Abstract: An apparatus for controlling an oscillation output of a magnetron includes a switch circuit controlled of ON/OFF states thereof by a pulse signal, a rectifying circuit for supplying microwave power pulses to the magnetron, and a transformer having a primary side and a secondary side. The primary side has a first terminal and a second terminal, where the first terminal is connected to an A.C. power supply, the second terminal is connected to the switch circuit. The secondary side is connected to the rectifying circuit. The switch circuit is turned ON/OFF by the pulse signal so that a duty factor of the microwave power pulses output from the rectifying circuit and a repetition frequency of the duty cycle thereof become constant.

    Abstract translation: 用于控制磁控管的振荡输出的装置包括通过脉冲信号控制其ON / OFF状态的开关电路,用于向磁控管提供微波功率脉冲的整流电路,以及具有初级侧和次级侧的变压器。 初级侧具有第一端子和第二端子,其中第一端子连接到交流电源,第二端子连接到开关电路。 次级侧连接到整流电路。 通过脉冲信号使开关电路接通/断开,使得从整流电路输出的微波功率脉冲的占空因数和其占空比的重复频率变得恒定。

    Manufacturing apparatus of semiconductor device
    2.
    发明授权
    Manufacturing apparatus of semiconductor device 有权
    半导体器件制造装置

    公开(公告)号:US07513981B2

    公开(公告)日:2009-04-07

    申请号:US11089538

    申请日:2005-03-25

    CPC classification number: H01L21/2855 C23C14/0063 C23C14/564 H01L21/76841

    Abstract: A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, −4° C.

    Abstract translation: 负载锁定室(12)通过阻尼器等连接在成膜室(11)的前部。 将供给有N2气体和气雾状或雾状H 2 O的管连接到负载锁定室(12)。 管道从气化器(13)引出。 在负载锁定室(12)的内部,设置放置有晶片(20)的搬运部15,而在负载锁定室(12)的外部,冷却器(14)借助于 设置液氮。 承载部15的温度保持在例如-4℃。

    Manufacturing apparatus and manufacturing method of semiconductor device
    3.
    发明申请
    Manufacturing apparatus and manufacturing method of semiconductor device 有权
    半导体器件的制造装置及其制造方法

    公开(公告)号:US20050241932A1

    公开(公告)日:2005-11-03

    申请号:US11089538

    申请日:2005-03-25

    CPC classification number: H01L21/2855 C23C14/0063 C23C14/564 H01L21/76841

    Abstract: A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, −4° C.

    Abstract translation: 负载锁定室(12)通过阻尼器等连接在成膜室(11)的前部。 供给N 2气体和气态或雾状H 2 O 2的管被连接到负载锁定室(12)。 管道从气化器(13)引出。 在负载锁定室(12)的内部,设置放置有晶片(20)的搬运部15,而在负载锁定室(12)的外部,冷却器(14)借助于 设置液氮。 承载部15的温度保持在例如-4℃。

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