公开(公告)号：US06898551B2

公开(公告)日：2005-05-24

申请号：US10418275

申请日：2003-04-18

申请人： Shuichi Samata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao ,  Takeo Furuhata

发明人： Shuichi Samata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao ,  Takeo Furuhata

IPC分类号： F04B51/00 ,  F04B49/10 ,  G01H1/00 ,  G05B23/02 ,  G21C17/00 ,  G06F19/00

CPC分类号： G05B23/0229 ,  G01H1/003 ,  G05B23/0283

摘要： A system for predicting life of a rotary machine, includes a vibration gauge configured to measure time series data of a peak acceleration of the rotary machine; a band pass filter configured to filter an analog signal of the time series data of the peak acceleration measured by the vibration gauge in a frequency band including a first analysis frequency expressed as a product of an equation including a number of rotor blades of the rotary machine and a normal frequency unique to the rotary machine; and a data processing unit configured to predict a life span of the rotary machine by characteristics of the filtered analog data of the time series data of the peak acceleration with the first analysis frequency.

摘要翻译： 一种用于预测旋转机器寿命的系统，包括配置成测量旋转机器的峰值加速度的时间序列数据的振动计; 带通滤波器，被配置为滤波由振动计测量的峰值加速度的时间序列数据的模拟信号，所述频率带包括第一分析频率的频带，所述第一分析频率表示为包括旋转机器的多个转子叶片的等式的乘积 和旋转机器唯一的正常频率; 以及数据处理单元，其被配置为通过具有第一分析频率的峰值加速度的时间序列数据的经滤波的模拟数据的特性来预测旋转机器的寿命。

公开(公告)号：US07065469B2

公开(公告)日：2006-06-20

申请号：US10390698

申请日：2003-03-19

申请人： Shuichi Samata ,  Takeo Furuhata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao

发明人： Shuichi Samata ,  Takeo Furuhata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao

IPC分类号： G01M7/02

CPC分类号： G01M15/12 ,  G05B23/0221 ,  G05B23/0283

摘要： A manufacturing apparatus which includes a rotary machine, includes: a plurality of accelerometers configured to measure diagnosis time series data attached to the rotary machine at locations where variations of the rotary machine are different; a frequency analysis device configured to perform a frequency analysis on the diagnosis time series data measured by the plurality of accelerometers; a time series data recording module configured to generate diagnosis data based on variations in characteristics of vibration corresponding to an analysis target frequency and to record the diagnosis data; and a life prediction unit configured to analyze the diagnosis data to determine a life span of the rotary machine.

摘要翻译： 一种包括旋转机器的制造装置，包括：多个加速度计，被配置为在旋转机器的变化不同的位置处测量附接到旋转机器的诊断时间序列数据; 频率分析装置，被配置为对由所述多个加速度计测量的诊断时间序列数据执行频率分析; 时间序列数据记录模块，被配置为基于与分析目标频率相对应的振动特性的变化产生诊断数据并记录诊断数据; 以及寿命预测单元，其构造成分析所述诊断数据以确定所述旋转机器的寿命。

公开(公告)号：US06885972B2

公开(公告)日：2005-04-26

申请号：US10229005

申请日：2002-08-28

申请人： Shuichi Samata ,  Yukihiro Ushiku ,  Takeo Furuhata ,  Takashi Nakao ,  Ken Ishii

发明人： Shuichi Samata ,  Yukihiro Ushiku ,  Takeo Furuhata ,  Takashi Nakao ,  Ken Ishii

IPC分类号： F04B51/00 ,  G05B19/4065 ,  H01L21/02 ,  G06F19/00

CPC分类号： G05B19/4065 ,  G05B2219/37252 ,  Y02P90/86

摘要： A method for predicting life span of a rotary machine used in a manufacturing apparatus, includes: measuring rotary machine acceleration evaluation time series data with a sampling interval being less than a half the cycle of an analysis target frequency, a number of samplings being at least four times the analysis target frequency; generating evaluation diagnosis data based on variations in characteristics corresponding to the analysis target frequency by subjecting the evaluation time series data to frequency analysis; and determining the life span of the rotary machine using the evaluation diagnosis data.

摘要翻译： 一种用于预测制造装置中使用的旋转机械的使用寿命的方法，包括：以取样间隔小于分析对象频率的周期的一半来测量旋转机械加速度评价时间序列数据，取样次数至少为 四倍分析目标频率; 通过对评价时间序列数据进行频率分析，生成基于与分析对象频率对应的特性的变化的评价诊断数据; 以及使用评估诊断数据确定所述旋转机器的使用寿命。

公开(公告)号：US20050107984A1

公开(公告)日：2005-05-19

申请号：US11020477

申请日：2004-12-27

申请人： Shuichi Samata ,  Yukihiro Ushiku ,  Takashi Nakao ,  Takeo Furuhata

发明人： Shuichi Samata ,  Yukihiro Ushiku ,  Takashi Nakao ,  Takeo Furuhata

IPC分类号： B25B13/56 ,  B25F1/04 ,  F04C18/18 ,  F04C29/00 ,  G06F11/30

CPC分类号： F04C18/18 ,  B25B13/56 ,  B25F1/04 ,  F04C28/28 ,  F04C29/0085 ,  F04C2220/12 ,  F04C2220/30 ,  F04C2270/07 ,  F04C2270/80

摘要： A method for predicting life of a rotary machine used in a manufacturing apparatus, includes: determining a starting time of an abnormal condition just before a failure of a monitor rotary machine used in a monitor manufacturing process, from monitor time-series data for characteristics of the monitor rotary machine, statistically analyzing the monitor time-series data, and finding a value for the characteristics at the starting time of the abnormal condition as a threshold of the abnormal condition; measuring diagnosis time-series data for the characteristic of a motor current of a diagnosis rotary machine during a manufacturing process; preparing diagnosis data from the diagnosis time-series data; and determining a time for the diagnosis data exceeding the threshold as the life of the diagnosis rotary machine.

摘要翻译： 一种用于预测制造设备中使用的旋转机器的寿命的方法，包括：根据监视器制造过程中使用的监视旋转机器故障之前的异常状况的开始时间，从监视时间序列数据 监视旋转机，对监视时间序列数据进行统计分析，并将异常状态开始时的特性值作为异常状态的阈值求和; 在制造过程中测量诊断旋转机器的电机电流特性的诊断时间序列数据; 从诊断时间序列数据准备诊断数据; 并且将诊断数据超过阈值的时间确定为诊断旋转机器的寿命。

公开(公告)号：US20060097303A1

公开(公告)日：2006-05-11

申请号：US11312388

申请日：2005-12-21

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L29/94

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

公开(公告)号：US07126178B2

公开(公告)日：2006-10-24

申请号：US11068848

申请日：2005-03-02

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

公开(公告)号：US06946699B2

公开(公告)日：2005-09-20

申请号：US10410442

申请日：2003-04-10

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L31/119

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

摘要翻译： 半导体器件包括半导体衬底; 形成在所述半导体衬底或沉积在所述半导体衬底上的层中的沟槽; 沉积在所述沟槽中并在其顶表面中具有凹部的第一导电层; 掩埋层，其埋入第一导电层的凹部，并且由熔点低于第一导电层的熔点的材料制成; 以及形成在所述沟槽内的所述掩埋层上并电连接到所述第一导电层的第二导电层。

公开(公告)号：US06982198B2

公开(公告)日：2006-01-03

申请号：US11068853

申请日：2005-03-02

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L21/8242

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

摘要翻译： 半导体器件包括半导体衬底; 形成在所述半导体衬底或沉积在所述半导体衬底上的层中的沟槽; 沉积在所述沟槽中并在其顶表面中具有凹部的第一导电层; 掩埋层，其埋入第一导电层的凹部，并且由熔点低于第一导电层的熔点的材料制成; 以及形成在所述沟槽内的所述掩埋层上并电连接到所述第一导电层的第二导电层。

公开(公告)号：US20050170582A1

公开(公告)日：2005-08-04

申请号：US11068848

申请日：2005-03-02

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L31/119

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

公开(公告)号：US20050167720A1

公开(公告)日：2005-08-04

申请号：US11068853

申请日：2005-03-02

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L31/119

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.