System for predicting life of a rotary machine, method for predicting life of a manufacturing apparatus which uses a rotary machine and a manufacturing apparatus
    1.
    发明授权
    System for predicting life of a rotary machine, method for predicting life of a manufacturing apparatus which uses a rotary machine and a manufacturing apparatus 失效
    用于预测旋转机器寿命的系统,用于预测使用旋转机器的制造装置的寿命的方法和制造装置

    公开(公告)号:US06898551B2

    公开(公告)日:2005-05-24

    申请号:US10418275

    申请日:2003-04-18

    摘要: A system for predicting life of a rotary machine, includes a vibration gauge configured to measure time series data of a peak acceleration of the rotary machine; a band pass filter configured to filter an analog signal of the time series data of the peak acceleration measured by the vibration gauge in a frequency band including a first analysis frequency expressed as a product of an equation including a number of rotor blades of the rotary machine and a normal frequency unique to the rotary machine; and a data processing unit configured to predict a life span of the rotary machine by characteristics of the filtered analog data of the time series data of the peak acceleration with the first analysis frequency.

    摘要翻译: 一种用于预测旋转机器寿命的系统,包括配置成测量旋转机器的峰值加速度的时间序列数据的振动计; 带通滤波器,被配置为滤波由振动计测量的峰值加速度的时间序列数据的模拟信号,所述频率带包括第一分析频率的频带,所述第一分析频率表示为包括旋转机器的多个转子叶片的等式的乘积 和旋转机器唯一的正常频率; 以及数据处理单元,其被配置为通过具有第一分析频率的峰值加速度的时间序列数据的经滤波的模拟数据的特性来预测旋转机器的寿命。

    Manufacturing apparatus and method for predicting life of a manufacturing apparatus which uses a rotary machine
    2.
    发明授权
    Manufacturing apparatus and method for predicting life of a manufacturing apparatus which uses a rotary machine 失效
    用于预测使用旋转机器的制造装置的寿命的制造装置和方法

    公开(公告)号:US07065469B2

    公开(公告)日:2006-06-20

    申请号:US10390698

    申请日:2003-03-19

    IPC分类号: G01M7/02

    摘要: A manufacturing apparatus which includes a rotary machine, includes: a plurality of accelerometers configured to measure diagnosis time series data attached to the rotary machine at locations where variations of the rotary machine are different; a frequency analysis device configured to perform a frequency analysis on the diagnosis time series data measured by the plurality of accelerometers; a time series data recording module configured to generate diagnosis data based on variations in characteristics of vibration corresponding to an analysis target frequency and to record the diagnosis data; and a life prediction unit configured to analyze the diagnosis data to determine a life span of the rotary machine.

    摘要翻译: 一种包括旋转机器的制造装置,包括:多个加速度计,被配置为在旋转机器的变化不同的位置处测量附接到旋转机器的诊断时间序列数据; 频率分析装置,被配置为对由所述多个加速度计测量的诊断时间序列数据执行频率分析; 时间序列数据记录模块,被配置为基于与分析目标频率相对应的振动特性的变化产生诊断数据并记录诊断数据; 以及寿命预测单元,其构造成分析所述诊断数据以确定所述旋转机器的寿命。

    Processing system and operating method of processing system
    3.
    发明申请
    Processing system and operating method of processing system 审中-公开
    处理系统和处理系统的操作方法

    公开(公告)号:US20050284575A1

    公开(公告)日:2005-12-29

    申请号:US11196398

    申请日:2005-08-04

    摘要: A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.

    摘要翻译: 本发明的处理系统包括:反应容器,其中放置有待处理的基板,处理气体供给机构,其将处理气体在处理过程中提供给反应容器;清洗气体供给机构 在清洁过程中向反应容器提供腐蚀性清洁气体,连接到反应室的气体排出构件,加热反应容器的特定部分的加热单元和气体排出通路构件, 温度检测单元,其检测特定部分的温度;温度控制单元,其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元, 改变单元,其在过程到基板和清洁过程之间改变目标温度。 通过温度变化单元,将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度,同时将目标温度设定为温度 在清洗过程中可能会抑制特定部分的腐蚀。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US20090001442A1

    公开(公告)日:2009-01-01

    申请号:US12145109

    申请日:2008-06-24

    IPC分类号: H01L29/786 H01L21/336

    摘要: A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.

    摘要翻译: 一种非易失性半导体存储器件,包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底,绝缘材料的表面被半导体层覆盖,并且设置在半导体层上的多个存储单元,存储器 电池包括通过覆盖半导体层的表面而提供的第一电介质膜,设置在绝缘材料上方和第一电介质膜上的多个电荷存储层,设置在每个电荷存储层上的多个第二电介质膜,多个 设置在每个第二电介质膜上的导电层,以及杂质扩散层,其部分或整体形成在绝缘材料的至少上方和半导体层的内部,并且其底端的至少一部分由绝缘体的上表面 材料。

    Cleaning method for a semiconductor device manufacturing apparatus
    5.
    发明授权
    Cleaning method for a semiconductor device manufacturing apparatus 失效
    半导体装置制造装置的清洗方法

    公开(公告)号:US06989281B2

    公开(公告)日:2006-01-24

    申请号:US10957609

    申请日:2004-10-05

    IPC分类号: H01L21/00

    CPC分类号: H01L21/67253

    摘要: A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

    摘要翻译: 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理,将具有预定波长的光施加到监视部分,以间接监视形成在被检体上的膜的厚度,引入 清除气体,其能够将沉积在监测部分上的物质去除到处理室中,测量作为在监测部分附近反射的应用光的反射光,测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

    Method of manufacturing semiconductor device
    6.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08114755B2

    公开(公告)日:2012-02-14

    申请号:US12146143

    申请日:2008-06-25

    IPC分类号: H01L21/76

    CPC分类号: H01L21/764

    摘要: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

    摘要翻译: 一种制造半导体器件的方法包括:去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分,在凹部中形成第一外延半导体层,形成第二外延半导体层 在所述突出部分和所述第一外延半导体层上,用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分,以露出所述第一外延半导体层的一部分,并且蚀刻所述第一外延半导体层 从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    7.
    发明申请
    Nonvolatile semiconductor memory device and method of manufacturing the same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US20100171164A1

    公开(公告)日:2010-07-08

    申请号:US12659703

    申请日:2010-03-17

    IPC分类号: H01L27/115 H01L29/788

    摘要: A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.

    摘要翻译: 一种非易失性半导体存储器件,包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底,绝缘材料的表面被半导体层覆盖,并且设置在半导体层上的多个存储单元,存储器 电池包括通过覆盖半导体层的表面而提供的第一电介质膜,设置在绝缘材料上方和第一电介质膜上的多个电荷存储层,设置在每个电荷存储层上的多个第二电介质膜,多个 设置在每个第二电介质膜上的导电层,以及杂质扩散层,其部分或整体形成在绝缘材料的至少上方和半导体层的内部,并且其底端的至少一部分由绝缘体的上表面 材料。

    Cleaning method for a semiconductor device manufacturing apparatus
    9.
    发明申请
    Cleaning method for a semiconductor device manufacturing apparatus 失效
    半导体装置制造装置的清洗方法

    公开(公告)号:US20050059203A1

    公开(公告)日:2005-03-17

    申请号:US10957609

    申请日:2004-10-05

    CPC分类号: H01L21/67253

    摘要: A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

    摘要翻译: 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理,将具有预定波长的光施加到监视部分,以间接监视形成在被检体上的膜的厚度,引入 清除气体,其能够将沉积在监测部分上的物质去除到处理室中,测量作为在监测部分附近反射的应用光的反射光,测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。