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公开(公告)号：US09111804B2
公开(公告)日：2015-08-18
申请号：US13346963
申请日：2012-01-10
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
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公开(公告)号：US08729544B2
公开(公告)日：2014-05-20
申请号：US13013054
申请日：2011-01-25
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
摘要翻译： 本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。 在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层， 漏电极层。 有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。
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公开(公告)号：US08624237B2
公开(公告)日：2014-01-07
申请号：US12511291
申请日：2009-07-29
IPC分类号： H01L29/10
CPC分类号： H01L29/78618 , G02F1/133345 , G02F1/133528 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2201/123 , G09G3/3674 , G09G2310/0286 , H01L27/1225 , H01L27/3262 , H01L29/247 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译： 一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 电极层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。
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公开(公告)号：US08980684B2
公开(公告)日：2015-03-17
申请号：US13346963
申请日：2012-01-10
IPC分类号： H01L27/12 , H01L29/786
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
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公开(公告)号：US08945981B2
公开(公告)日：2015-02-03
申请号：US12511273
申请日：2009-07-29
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78606
摘要： To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.
摘要翻译： 提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件和具有高质量生产率的半导体器件的制造方法。 总而言之，包括使用含有In，Ga和Zn的氧化物半导体膜作为半导体层的反交错（底栅极）薄膜晶体管，沟道保护层设置在与 沟道形成区域，并且在半导体层和源极和漏极之间设置有缓冲层。 通过有意地提供具有比半导体层和源极和漏极之间的半导体层更高的载流子浓度的缓冲层来形成欧姆接触。
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公开(公告)号：US08049225B2
公开(公告)日：2011-11-01
申请号：US12535711
申请日：2009-08-05
CPC分类号： H01L29/66772 , H01L29/6675 , H01L29/78618 , H01L29/7869
摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译： 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。
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公开(公告)号：US09496406B2
公开(公告)日：2016-11-15
申请号：US13547377
申请日：2012-07-12
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78618 , G02F1/133345 , G02F1/133528 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2201/123 , G09G3/3674 , G09G2310/0286 , H01L27/1225 , H01L27/3262 , H01L29/247 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译： 一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 电极层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。
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公开(公告)号：US08471252B2
公开(公告)日：2013-06-25
申请号：US12535715
申请日：2009-08-05
IPC分类号： H01L21/34 , H01L29/786
CPC分类号： H01L29/66742 , H01L29/78621 , H01L29/7869
摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译： 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地提供具有比半导体层更高的载流子浓度的金属氧化物层作为源极和漏极电极层与半导体层之间的缓冲层，从而形成欧姆接触。
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公开(公告)号：US08129717B2
公开(公告)日：2012-03-06
申请号：US12511285
申请日：2009-07-29
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
摘要翻译： 本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。 在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层， 漏电极层。 有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。
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公开(公告)号：US09666719B2
公开(公告)日：2017-05-30
申请号：US12511252
申请日：2009-07-29
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/42384 , H01L29/66969 , H01L29/78618
摘要： To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.
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