公开(公告)号：US11897757B1

公开(公告)日：2024-02-13

申请号：US17384535

申请日：2021-07-23

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

公开(公告)号：US11807518B1

公开(公告)日：2023-11-07

申请号：US15627049

申请日：2017-06-19

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm-3, and preferably between 1019 cm-3 and 1021 cm-3.