公开(公告)号：US20250128937A1

公开(公告)日：2025-04-24

申请号：US18625857

申请日：2024-04-03

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H03H3/007 ,  H03H9/10 ,  H10N30/05 ,  H10N39/00

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

公开(公告)号：US09705470B1

公开(公告)日：2017-07-11

申请号：US14617753

申请日：2015-02-09

Applicant: SiTime Corporation

Inventor： Joseph C. Doll ,  Paul M. Hagelin ,  Ginel C. Hill ,  Nicholas Miller ,  Charles I. Grosjean

IPC: H01L41/16 ,  H01L41/18 ,  H01L41/047 ,  H03H9/02 ,  H01L41/314 ,  H01L41/29 ,  H01L41/253 ,  H03H9/15

CPC classification number: H03H9/02448 ,  H03H9/02362 ,  H03H9/2452 ,  H03H2003/027 ,  H03H2009/02307 ,  H03H2009/155

Abstract: Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.

公开(公告)号：US20170093361A1

公开(公告)日：2017-03-30

申请号：US15186510

申请日：2016-06-19

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll ,  Trushal Chokshi ,  Yi Zhang ,  Aaron Partridge ,  Markus Lutz

IPC: H03H3/007 ,  H03H9/17

CPC classification number: H03H3/0077 ,  H03H9/02259 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02307 ,  H03H2009/155

Abstract: In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

公开(公告)号：US20230183060A1

公开(公告)日：2023-06-15

申请号：US18072506

申请日：2022-11-30

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H10N30/05 ,  H10N39/00 ,  H03H3/007 ,  H03H9/10

CPC classification number: B81C1/00698 ,  H03H3/0073 ,  H03H9/1057 ,  H10N30/05 ,  H10N39/00 ,  B81C1/00158 ,  B81C2201/0171

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

公开(公告)号：US09695036B1

公开(公告)日：2017-07-04

申请号：US13759013

申请日：2013-02-04

Applicant: SiTime Corporation

Inventor： Renata Melamud Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: H01L31/058 ,  H03H9/00 ,  B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405 ,  H03H9/2457

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

公开(公告)号：US20230416081A1

公开(公告)日：2023-12-28

申请号：US18340815

申请日：2023-06-23

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H10N30/05 ,  H10N39/00 ,  H03H3/007 ,  H03H9/10

CPC classification number: B81C1/00698 ,  H10N30/05 ,  H10N39/00 ,  H03H3/0073 ,  H03H9/1057 ,  B81C2201/0171 ,  B81C1/00158

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

公开(公告)号：US10676349B1

公开(公告)日：2020-06-09

申请号：US15676890

申请日：2017-08-14

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H01L41/27 ,  H01L27/20

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

公开(公告)号：US11897757B1

公开(公告)日：2024-02-13

申请号：US17384535

申请日：2021-07-23

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

公开(公告)号：US11807518B1

公开(公告)日：2023-11-07

申请号：US15627049

申请日：2017-06-19

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm-3, and preferably between 1019 cm-3 and 1021 cm-3.

公开(公告)号：US11584642B1

公开(公告)日：2023-02-21

申请号：US16861778

申请日：2020-04-29

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H01L41/27 ,  H01L27/20 ,  H03H3/007 ,  H03H9/10

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.