公开(公告)号：US20220392543A1

公开(公告)日：2022-12-08

申请号：US17481225

申请日：2021-09-21

Applicant: Silicon Storage Technology, Inc.

Inventor： VIKTOR MARKOV ,  ALEXANDER KOTOV

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/14 ,  G11C16/34

Abstract: A memory device and method for a non-volatile memory cell having a gate that includes programming the memory cell to an initial program state corresponding to a target read current and a threshold voltage, including applying a program voltage having a first value to the gate, storing the first value in a memory, reading the memory cell in a first read operation using a read voltage applied to the gate that is less than the target threshold voltage to generate a first read current, and subjecting the memory cell to additional programming in response to determining that the first read current is greater than the target read current. The additional programming includes retrieving the first value from the memory, determining a second value greater than the first value, and programming the selected non-volatile memory cell that includes applying a program voltage having the second value to the gate.

公开(公告)号：US20220392549A1

公开(公告)日：2022-12-08

申请号：US17482095

申请日：2021-09-22

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor Markov ,  ALEXANDER KOTOV

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26

Abstract: A method of programing a memory device having a plurality of memory cell groups where each of the memory cell group includes N non-volatile memory cells, where N is an integer greater than or equal to 2. For each memory cell group, the method includes programming each of the non-volatile memory cells in the memory cell group to a particular program state, performing multiple read operations on each of the non-volatile memory cells in the memory cell group, identifying one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply programming all of the non-volatile memory cells in the memory cell group except the identified non-volatile memory cell, and programming the identified non-volatile memory cell in the memory cell group with user data.

公开(公告)号：US20230335212A1

公开(公告)日：2023-10-19

申请号：US17858185

申请日：2022-07-06

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor Markov ,  ALEXANDER KOTOV

IPC: G11C29/50 ,  G11C16/14 ,  G11C16/26 ,  G11C16/34

CPC classification number: G11C29/50016 ,  G11C16/14 ,  G11C16/26 ,  G11C16/349 ,  G11C29/50004 ,  G11C2029/5006 ,  G11C2029/5004

Abstract: A method for screening memory cells includes erasing the memory cells, weakly programming the memory cells to a modified erased state, performing a first read operation on the memory cells after the erasing and the weakly programming, screening any of the memory cells that exhibit a read current during the first read operation below a margin read current threshold M1, baking the memory cells after the first read operation, performing a second read operation on the memory cells after the baking, and screening any of the memory cells that exhibit a read current during the second read operation below the margin read current threshold M1.