公开(公告)号：US20150344299A1

公开(公告)日：2015-12-03

申请号：US14821010

申请日：2015-08-07

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Hong-Da Chang ,  Hsin-Yi Liao ,  Chun-An Huang ,  Shih-Kuang Chiu ,  Chien-An Chen

IPC: B81C1/00

CPC classification number: B81C1/00301 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0154 ,  H01L29/84 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract translation: 提供了具有压力传感器及其制造方法的晶片级封装。 将具有压力传感器的晶片接合到盖上，并且在晶片上形成电连接焊盘。 在切割盖子之后，进行引线键合和封装处理。 接合线的端部暴露并用作电连接路径。 为了形成压力传感器路径，在晶片的底面上形成底部开口。

公开(公告)号：US09487393B2

公开(公告)日：2016-11-08

申请号：US14821010

申请日：2015-08-07

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Hong-Da Chang ,  Hsin-Yi Liao ,  Chun-An Huang ,  Shih-Kuang Chiu ,  Chien-An Chen

IPC: H01L29/00 ,  B81C1/00 ,  H01L29/84

CPC classification number: B81C1/00301 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0154 ,  H01L29/84 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract translation: 提供了具有压力传感器及其制造方法的晶片级封装。 将具有压力传感器的晶片接合到盖上，并且在晶片上形成电连接焊盘。 在切割盖子之后，进行引线键合和封装处理。 接合线的端部暴露并用作电连接路径。 为了形成压力传感器路径，在晶片的底面上形成底部开口。