公开(公告)号：US20170271251A1

公开(公告)日：2017-09-21

申请号：US15612390

申请日：2017-06-02

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Bo-Shiang Fang ,  Ho-Chuan Lin ,  Chia-Chu Lai ,  Min-Han Chuang ,  Li-Fang Lin

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/768 ,  H01L23/13

Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

公开(公告)号：US09698090B2

公开(公告)日：2017-07-04

申请号：US13753882

申请日：2013-01-30

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Bo-Shiang Fang ,  Ho-Chuan Lin ,  Chia-Chu Lai ,  Min-Han Chuang ,  Li-Fang Lin

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/14 ,  H01L23/13 ,  H01L21/768

CPC classification number: H01L23/49827 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49894 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/00

Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

公开(公告)号：US09281557B2

公开(公告)日：2016-03-08

申请号：US14090787

申请日：2013-11-26

Applicant: Siliconware Precision Industries Co., Ltd

Inventor： Chia-Chu Lai ,  Min-Han Chuang ,  Bo-Shiang Fang ,  Ho-Chuan Lin ,  Li-Fang Lin

IPC: H01Q1/50 ,  H03H5/00 ,  H03H7/42

CPC classification number: H01Q1/50 ,  H03H7/425

Abstract: A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.

Abstract translation: 提供了一种多频带平衡 - 不平衡变压器，包括主信号端口，电连接到主信号端口的主电感器，与主电感器相互感应的第一电感器，以构成第一转换电路的第一电感器;第一电容器模块， 与第一转换电路平行的两个第一信号端口电连接到第一电容器模块，电连接到第一信号端口和第一电容器模块之间的第一主电容器，与主电感器相互感应的第二电感器，以构成第二电容器 第二转换电路的电感器，与第二转换电路并联连接的第二电容器模块，电连接到第二电容器模块的两个第二信号端口，以及与第二信号端口和第二电容器模块电连接的第二主电容器 。

公开(公告)号：US20140124950A1

公开(公告)日：2014-05-08

申请号：US13753882

申请日：2013-01-30

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

Inventor： Bo-Shiang Fang ,  Ho-Chuan Lin ,  Chia-Chu Lai ,  Min-Han Chuang ,  Li-Fang Lin

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49827 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49894 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/00

Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

Abstract translation: 公开了一种半导体衬底。 半导体衬底包括：至少在其表面上形成有开口的衬底本体，其中衬底主体的表面和开口的壁由绝缘材料制成; 以及形成在所述基板主体的表面上的电路层，其中所述电路层覆盖所述开口的端部并且与所述开口电绝缘。 该开口有助于增加硅材料的电路层和衬底主体之间的绝缘结构的厚度，以防止当高频信号施加到电路层时的信号劣化。

公开(公告)号：US20150188510A1

公开(公告)日：2015-07-02

申请号：US14210789

申请日：2014-03-14

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD

Inventor： Ho-Chuan Lin ,  Chia-Chu Lai ,  Min-Han Chuang ,  Li-Fang Lin ,  Ming-Fan Tsai

IPC: H03H7/01

CPC classification number: H03H7/0115 ,  H03H7/175 ,  H03H7/1766 ,  H03H7/1775 ,  H03H7/42 ,  H03H7/463 ,  H03H2001/0085

Abstract: A circuit structure is provided, which includes: a first circuit portion having at least a capacitor; a first dielectric portion combined with the first circuit portion; a second circuit portion electrically connected to the first circuit portion and having at least an inductor; and a second dielectric portion combined with the second circuit portion, wherein the first dielectric portion has a greater dielectric constant than the second dielectric portion, thereby increasing the capacitance value and density and causing the inductor to have a high enough Q value.

Abstract translation: 提供了一种电路结构，其包括：具有至少一个电容器的第一电路部分; 与第一电路部分组合的第一电介质部分; 电连接到第一电路部分并且具有至少一个电感器的第二电路部分; 以及与第二电路部分组合的第二电介质部分，其中第一电介质部分具有比第二电介质部分更大的介电常数，从而增加电容值和密度，并使电感器具有足够高的Q值。

公开(公告)号：US20140320374A1

公开(公告)日：2014-10-30

申请号：US14090787

申请日：2013-11-26

Applicant: Siliconware Precision Industries Co., Ltd

Inventor： Chia-Chu Lai ,  Min-Han Chuang ,  Bo-Shiang Fang ,  Ho-Chuan Lin ,  Li-Fang Lin

IPC: H03H7/42 ,  H01Q1/50

CPC classification number: H01Q1/50 ,  H03H7/425

Abstract: A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.

Abstract translation: 提供了一种多频带平衡 - 不平衡变压器，包括主信号端口，电连接到主信号端口的主电感器，与主电感器相互感应的第一电感器，以构成第一转换电路的第一电感器;第一电容器模块， 与第一转换电路平行的两个第一信号端口电连接到第一电容器模块，电连接到第一信号端口和第一电容器模块之间的第一主电容器，与主电感器相互感应的第二电感器，以构成第二电容器 第二转换电路的电感器，与第二转换电路并联连接的第二电容器模块，电连接到第二电容器模块的两个第二信号端口，以及与第二信号端口和第二电容器模块电连接的第二主电容器 。