公开(公告)号：US09422634B2

公开(公告)日：2016-08-23

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20 ,  C30B13/30 ,  C30B29/06

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

公开(公告)号：US20130160698A1

公开(公告)日：2013-06-27

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 区域，其结晶边界的外边缘与结晶边界的外边缘之间的外三重点Ta与结晶边界的中心Z之间的距离Delta受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。