公开(公告)号：US09932691B2

公开(公告)日：2018-04-03

申请号：US14945840

申请日：2015-11-19

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Martin Moeller ,  Frank Muemmler

IPC: C30B13/26 ,  C30B13/32 ,  C30B13/20 ,  C30B29/06

CPC classification number: C30B13/32 ,  C30B13/20 ,  C30B13/26 ,  C30B29/06

Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

公开(公告)号：US20130160698A1

公开(公告)日：2013-06-27

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 区域，其结晶边界的外边缘与结晶边界的外边缘之间的外三重点Ta与结晶边界的中心Z之间的距离Delta受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

公开(公告)号：US12104274B2

公开(公告)日：2024-10-01

申请号：US17784742

申请日：2020-12-03

Applicant: SILTRONIC AG

Inventor： Wolfgang Staudacher ,  Georg Raming

IPC: C30B15/04 ,  C30B15/10 ,  C30B15/26 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/10 ,  C30B15/26 ,  C30B29/06

Abstract: Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.

公开(公告)号：US09932690B2

公开(公告)日：2018-04-03

申请号：US14417967

申请日：2013-07-01

Applicant: SILTRONIC AG

Inventor： Georg Raming ,  Ludwig Altmannshofer

IPC: C30B13/20 ,  C30B13/30 ,  C30B13/16 ,  C30B29/06

CPC classification number: C30B13/20 ,  C30B13/16 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

公开(公告)号：US09828693B2

公开(公告)日：2017-11-28

申请号：US14711942

申请日：2015-05-14

Applicant: SILTRONIC AG

Inventor： Georg Brenninger ,  Georg Raming

IPC: C30B13/08 ,  C30B13/20 ,  C30B11/00 ,  C30B13/14 ,  C30B13/30 ,  C30B29/06 ,  C30B11/10 ,  C30B15/12 ,  C30B15/02

CPC classification number: C30B13/20 ,  C30B11/001 ,  C30B11/003 ,  C30B11/10 ,  C30B13/08 ,  C30B13/14 ,  C30B13/30 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  Y10T117/108

Abstract: A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

公开(公告)号：US09422634B2

公开(公告)日：2016-08-23

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20 ,  C30B13/30 ,  C30B29/06

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

公开(公告)号：US20150203987A1

公开(公告)日：2015-07-23

申请号：US14417967

申请日：2013-07-01

Applicant: SILTRONIC AG

Inventor： Georg Raming ,  Ludwig Altmannshofer

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/16 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

Abstract translation: 一种用于通过在熔融区中结晶单晶来制造单晶的装置，包括壳体，在熔融区中产生热的电感器，围绕并向结晶单晶施加热辐射的再热器，以及分离底部， 在再热器的下端向下限定再热器和壳体的壁之间的中间空间。