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公开(公告)号：US20130160698A1
公开(公告)日：2013-06-27
申请号：US13705207
申请日：2012-12-05
Applicant: Siltronic AG
Inventor： Georg Raming , Ludwig Altmannshofer , Gundars Ratnieks , Johann Landrichinger , Josef Lobmeyer , Alfred Holzinger
IPC: C30B13/20
CPC classification number: C30B13/20 , C30B13/30 , C30B29/06 , Y10T117/1088
Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.
Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 区域，其结晶边界的外边缘与结晶边界的外边缘之间的外三重点Ta与结晶边界的中心Z之间的距离Delta受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。
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公开(公告)号：US09410262B2
公开(公告)日：2016-08-09
申请号：US13969818
申请日：2013-08-19
Applicant: Siltronic AG
Inventor： Josef Lobmeyer , Georg Brenninger , Waldemar Stein
Abstract: A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.
Abstract translation: 通过以下方法制造硅单晶：其中硅板被感应加热; 颗粒状硅在硅板上熔化; 并且由此产生的熔融硅流过板的中心的流动管道到硅单晶结晶的相界面，其中具有比该板电阻率低的硅并且位于板上的硅环被感应加热 然后感应加热板，并使环熔化。
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公开(公告)号：US09422634B2
公开(公告)日：2016-08-23
申请号：US13705207
申请日：2012-12-05
Applicant: Siltronic AG
Inventor： Georg Raming , Ludwig Altmannshofer , Gundars Ratnieks , Johann Landrichinger , Josef Lobmeyer , Alfred Holzinger
CPC classification number: C30B13/20 , C30B13/30 , C30B29/06 , Y10T117/1088
Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.
Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。
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公开(公告)号：US20140060421A1
公开(公告)日：2014-03-06
申请号：US13969818
申请日：2013-08-19
Applicant: Siltronic AG
Inventor： Josef Lobmeyer , Georg Brenninger , Waldemar Stein
IPC: C30B13/20
Abstract: A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.
Abstract translation: 通过以下方法制造硅单晶：其中硅板被感应加热; 颗粒状硅在硅板上熔化; 并且由此产生的熔融硅流过板的中心的流动管道到硅单晶结晶的相界面，其中具有比该板电阻率低的硅并且位于板上的硅环被感应加热 然后感应加热板，并使环熔化。
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