公开(公告)号：US20200076369A1

公开(公告)日：2020-03-05

申请号：US16562337

申请日：2019-09-05

申请人： Simon Fraser University

发明人： Zachary Raymond NUNN ,  Erol GIRT

IPC分类号： H03B15/00 ,  G11C11/16 ,  G01R33/09

摘要： A magnetic structure is provided. The magnetic structure may have a first magnetic layer with a first magnetization direction, a second magnetic layer with a second magnetization direction and a coupling layer interposed between the first and second magnetic layers. The coupling layer may include at least one non-magnetic element and at least one magnetic element. The atomic ratio of the at least one non-magnetic element to the at least one magnetic element is (100-x):x, where x is an atomic concentration parameter. Atomic concentration parameter, x, may cause the first magnetic layer to be non-collinearly coupled to the second magnetic layer such that, in the absence of external magnetic field, the first magnetization direction is oriented at a non-collinear angle relative to the second magnetization direction.

公开(公告)号：US20190221246A1

公开(公告)日：2019-07-18

申请号：US16228725

申请日：2018-12-20

申请人： Simon Fraser University

发明人： Zachary Raymond NUNN ,  Erol GIRT

IPC分类号： G11C11/16 ,  H01F1/01 ,  G01R33/12 ,  H01L43/08 ,  G01R33/09 ,  H01L43/10 ,  G11C11/15

CPC分类号： G11C11/1673 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  H01F1/015 ,  H01F1/017 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.