摘要:
A method for fabricating a mask for patterning a radiation sensitive layer in a lithographic printer is disclosed. An attenuating (absorptive or reflective) layer is coated over a substantially transparent base substrate such that after processing a two-dimensional spatially varying attenuating pattern is created with a continuously or discretely varying transmission or reflection function. In accordance with the present invention the two-dimensional attenuating pattern is formed by e-beam patterning of radiation sensitive layer to create a three-dimensional surface relief pattern. This pattern is transferred to the attenuating layer by an anisotropic etch, typically a directional reactive plasma etch. The attenuation of this radiation absorbing or reflecting layer varies with layer thickness. In one embodiment of this invention the attenuation of the mask would vary spatially in a continuous manner. In a second embodiment the attenuation of the mask (either reflective or absorptive) would vary spatially in discrete steps. One application of the mask created by this invention would be used to replicate a three-dimensional surface relief onto a second substrate by lithographic means. The replicated surface relief pattern could be used to store information, act as a mold for the formation of complex micro parts and to control etching of complex surfaces in micro optics, microelectronics and MEMS devices. The mask can be used as a phase shift mask to print high resolution profiles for the fabrication of microelectronics or to store and preserve images.
摘要:
Multilayer film stacks and gray scale processing methods are employed for fabricating phase-shifting masks (PSMs) utilized in lithography. Desired optical transmission and phase-shifting functions of the mask are achieved by controlling the optical properties and thickness of constituent film layers. The mask can be tuned for optimal performance at various wavelengths to an extent beyond that obtainable using a single layer film to control both attenuation and phase shifting of incident light. The processing methods exploit multi-level electron beam or optical beam lithography techniques, and the etch selectivity afforded by selection of appropriate materials for the film stack, to obtain improved yields and reduced processing costs for fabrication of PSMs. In particular, diamond-like carbon (DLC) materials formed by ion beam deposition and having a stress of 1 GPa or less are utilized as etch stop layers.
摘要:
A system and method for reducing periodic intensity variation in a video image includes applying input signals representing video image data to multiple circuit components by sequentially shifting the input signals through the circuit components to produce output signals that match corresponding input signals. Matching the output signals to the input signals overcomes the effect of inherent differences in characteristics of analog circuit components. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.