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公开(公告)号：US12088278B2
公开(公告)日：2024-09-10
申请号：US17219525
申请日：2021-03-31
Applicant: Skyworks Global Pte. Ltd.
Inventor： Kwang Jae Shin , Jiansong Liu , Jong Duk Han , Jae Hyung Lee , Yiliu Wang , Yosuke Hamaoka , Alexandre Augusto Shirakawa , Benfeng Zhang
CPC classification number: H03H9/205 , H03H3/02 , H03H3/04 , H03H9/02015 , H03H9/02086 , H03H9/173 , H03H9/175 , H03H9/54 , H03H9/564 , H03H9/568 , H04B1/40 , H03H2003/0442
Abstract: Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.
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公开(公告)号：US11595018B2
公开(公告)日：2023-02-28
申请号：US16877674
申请日：2020-05-19
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Jiansong Liu , Yuhao Liu , Li Chen , Yiliu Wang , Benjamin Paul Abbott , Kwang Jae Shin , Chun Sing Lam
Abstract: A film bulk acoustic wave resonator (FBAR) comprises a recessed frame region including an undulating perimeter.
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公开(公告)号：US11082023B2
公开(公告)日：2021-08-03
申请号：US16576529
申请日：2019-09-19
Applicant: Skyworks Global Pte. Ltd.
Inventor： Kwang Jae Shin , Jiansong Liu
IPC: H03H9/02 , H03H9/17 , H03H9/56 , H03H9/05 , H03H9/13 , H03H9/70 , H03F3/189 , H04B1/3827 , H03F3/20
Abstract: Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.
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公开(公告)号：US20200373901A1
公开(公告)日：2020-11-26
申请号：US16877674
申请日：2020-05-19
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Jiansong Liu , Yuhao Liu , Li Chen , Yiliu Wang , Benjamin Paul Abbott , Kwang Jae Shin , Chun Sing Lam
Abstract: A film bulk acoustic wave resonator (FBAR) comprises a recessed frame region including an undulating perimeter.
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公开(公告)号：US20250007494A1
公开(公告)日：2025-01-02
申请号：US18758878
申请日：2024-06-28
Applicant: Skyworks Global Pte. Ltd.
Inventor： Jiansong Liu , Kwang Jae Shin , Li Chen
Abstract: A bulk acoustic wave device includes a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode. A first raised frame structure outside of a middle area of an active domain of the bulk acoustic wave device, the raised frame structure including a first raised frame layer positioned between the first electrode and the second electrode and having a lower acoustic impedance than the first electrode. A mass-loading layer is disposed between the first raised frame layer and the piezoelectric layer. A thickness of the mass-loading layer is less than 50% of the thickness of the first raised frame layer. The first raised frame layer extends further into the active domain of the bulk acoustic wave device than the mass-loading layer.
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Patent Agency Ranking
公开(公告)号：US20220321101A1
公开(公告)日：2022-10-06
申请号：US17651632
申请日：2022-02-18
Applicant: Skyworks Global Pte. Ltd.
Inventor： Jiansong Liu , Kwang Jae Shin , Alexandre Augusto Shirakawa , Yiliu Wang
Abstract: Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.
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公开(公告)号：US20220094323A1
公开(公告)日：2022-03-24
申请号：US17471604
申请日：2021-09-10
Applicant: Skyworks Global Pte. Ltd.
Inventor： Benfeng Zhang , Jiansong Liu , Benjamin Paul Abbott , Kwang Jae Shin , Alexandre Augusto Shirakawa
Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides.
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8.发明申请公开(公告)号：US20200373911A1
公开(公告)日：2020-11-26
申请号：US16881285
申请日：2020-05-22
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Yiliu Wang , Yasufumi Kaneda , Xianyi Li , Kwang Jae Shin , Stephane Richard Marie Wloczysiak , Jiansong Liu , Nan Wu
Abstract: A ladder filter comprises a plurality of series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port of the ladder filter and a plurality of shunt bulk acoustic wave resonators electrically connected in parallel between adjacent ones of the plurality of series arm bulk acoustic wave resonators and ground, at least one of the plurality of shunt bulk acoustic wave resonators including raised frame regions having a first width, at least one of the plurality of series arm bulk acoustic wave resonators having one of raised frame regions having a second width less than the first width or lacking raised frame regions.
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公开(公告)号：US20230006642A1
公开(公告)日：2023-01-05
申请号：US17810364
申请日：2022-07-01
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Jiansong Liu , Kwang Jae Shin , Jae Hyung Lee , Jong Duk Han
Abstract: A bulk acoustic wave resonator device comprises a piezoelectric material layer, a first metal layer having a lower surface disposed on the upper surface of the piezoelectric material layer, a second metal layer having an upper surface disposed on the lower surface of the piezoelectric material layer, and an oxide raised frame disposed between the lower surface of the first metal layer and the upper surface of the second metal layer and surrounding a central active region of the bulk acoustic wave resonator device, the central active region having a first side and a second side, the oxide raised frame having a width on the first side of the central active region that is different from the width of the oxide raised frame on the second side of the central active region to improve an operating parameter of the bulk acoustic wave resonator.
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公开(公告)号：US20220103151A1
公开(公告)日：2022-03-31
申请号：US17218950
申请日：2021-03-31
Applicant: Skyworks Global Pte. Ltd.
Inventor： Kwang Jae Shin , Jiansong Liu , Jong Duk Han , Jae Hyung Lee , Yiliu Wang , Yosuke Hamaoka , Alexandre Augusto Shirakawa , Benfeng Zhang
Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.
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