公开(公告)号：US5563098A

公开(公告)日：1996-10-08

申请号：US419048

申请日：1995-04-10

申请人： So-Wen Kuo ,  Chih-Hao Chang

发明人： So-Wen Kuo ,  Chih-Hao Chang

IPC分类号： H01L21/768 ,  H01L21/283 ,  H01L21/302

CPC分类号： H01L21/76895 ,  H01L21/76802 ,  Y10S438/963

摘要： A method of forming buried contact holes is described. A layer of silicon oxide is provided overlying a semiconductor substrate. A layer of polysilicon is deposited overlying the silicon oxide layer. The polysilicon layer is covered with a layer of photoresist which is exposed and developed to provide a photoresist mask. The polysilicon layer is etched away where it is not covered by the photoresist mask wherein a polymer buildup is formed on the sidewalls of the polysilicon layer. Ions are implanted into the silicon oxide layer not covered by the photoresist mask. The photoresist mask is removed whereby the polymer buildup is also removed. Thereafter, the silicon oxide layer not covered by the polysilicon layer is etched away to complete the formation of the buried contact hole with reduced polymer buildup in the fabrication of an integrated circuit.

摘要翻译： 描述形成掩埋接触孔的方法。 在半导体衬底上提供一层氧化硅。 沉积覆盖氧化硅层的多晶硅层。 多晶硅层被一层光致抗蚀剂覆盖，该层被曝光和显影以提供光致抗蚀剂掩模。 多晶硅层被蚀刻掉，其不被光致抗蚀剂掩模覆盖，其中聚合物积聚形成在多晶硅层的侧壁上。 将离子注入到未被光致抗蚀剂掩模覆盖的氧化硅层中。 除去光致抗蚀剂掩模，从而除去聚合物积聚。 此后，在集成电路的制造中，蚀刻掉不被多晶硅层覆盖的氧化硅层，以形成埋入的接触孔，并减少聚合物积聚。

公开(公告)号：US6024887A

公开(公告)日：2000-02-15

申请号：US868342

申请日：1997-06-03

申请人： So-Wen Kuo ,  Chin-Shan Hou ,  Yung Jung Chang

发明人： So-Wen Kuo ,  Chin-Shan Hou ,  Yung Jung Chang

IPC分类号： G03F7/42 ,  H01L21/265 ,  H01L21/266 ,  H01L21/311 ,  C23F1/00

CPC分类号： G03F7/427 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31138

摘要： A method for stripping an ion implanted photoresist layer from a substrate. There is first provided a substrate. There is then formed over the substrate an ion implanted photoresist layer. There is then treated the ion implated photoresist layer with a first plasma employing a first etchant gas composition comprising a fluorine containing species to form a fluorine plasma treated ion implanted photoresist layer. Finally, there is then stripped from the substrate the fluorine plasma treated ion implanted photoresist layer with a second plasma employing a second etchant gas composition comprising an oxygen containing species without the fluorine containing species. The ion implanted photoresist layer is stripped from the substrate without plasma induced damage to the substrate. The method is particularly useful for stripping from semiconductor substrates ion implanted patterned photoresist layers employed in forming ion implant regions within those semiconductor substrates prior to thermally oxidizing those semiconductor substrates to form thermal silicon oxide layers upon those semiconductor substrates.

摘要翻译： 从衬底剥离离子注入的光致抗蚀剂层的方法。 首先提供基板。 然后在衬底上形成离子注入的光致抗蚀剂层。 然后使用包含含氟物质的第一蚀刻剂气体组合物用第一等离子体处理离子埋入光致抗蚀剂层，以形成氟等离子体处理的离子注入光致抗蚀剂层。 最后，使用包含不含氟物种的含氧物质的第二蚀刻剂气体组合物，用氟等离子体处理的离子注入的光致抗蚀剂层与第二等离子体从衬底上剥离。 离子注入的光致抗蚀剂层从衬底剥离而不会对衬底造成等离子体的损伤。 该方法特别可用于从半导体衬底剥离用于在这些半导体衬底内形成离子注入区域的离子注入的图案化光致抗蚀剂层，然后在这些半导体衬底上热氧化以在这些半导体衬底上形成热氧化硅层。

公开(公告)号：US5981347A

公开(公告)日：1999-11-09

申请号：US949946

申请日：1997-10-14

申请人： So-Wen Kuo ,  Lin-June Wu ,  Li-Huan Chu

发明人： So-Wen Kuo ,  Lin-June Wu ,  Li-Huan Chu

IPC分类号： H01L21/265 ,  H01L21/324 ,  H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/324

摘要： A method for forming a metal oxide semiconductor field effect transistor (MOSFET). There is first provided a semiconductor substrate. There is then formed upon the semiconductor substrate a gate dielectric layer. There is then formed upon the gate dielectric layer a gate electrode. There is then implanted into the semiconductor substrate while employing the gate electrode as a mask a pair of unactivated source/drain regions at a pair of opposite edges of the gate electrode, where the gate dielectric layer, the gate electrode and the pair of unactivated source/drain regions form an unactivated metal oxide semiconductor field effect transistor (MOSFET). There is then annealed thermally through a first thermal annealing method the semiconductor substrate to form from the pair of unactivated source/drain regions a pair of activated source/drain regions, where the gate dielectric layer, the gate electrode and the pair of activated source/drain regions form an activated metal oxide semiconductor field effect transistor (MOSFET). Finally, there is then annealed thermally through a subsequent second thermal annealing method the semiconductor substrate to form from the activated metal oxide semiconductor field effect transistor (MOSFET) a hot carrier effect (HCE) resistant activated metal oxide semiconductor field effect transistor (MOSFET).

摘要翻译： 一种用于形成金属氧化物半导体场效应晶体管（MOSFET）的方法。 首先提供半导体衬底。 然后在半导体衬底上形成栅极电介质层。 然后在栅极电介质层上形成栅电极。 然后，在栅极电介质层，栅电极和一对未激活源的一对相对边缘处，使用栅电极作为掩模，注入半导体衬底中一对未激活的源/漏区 /漏极区域形成未激活的金属氧化物半导体场效应晶体管（MOSFET）。 然后通过第一热退火方法热退火，半导体衬底从一对未激活的源极/漏极区域形成一对激活的源极/漏极区域，其中栅极电介质层，栅极电极和一对激活源极/ 漏极区域形成激活的金属氧化物半导体场效应晶体管（MOSFET）。 最后，然后通过随后的第二热退火方法热退火，半导体衬底由激活的金属氧化物半导体场效应晶体管（MOSFET）形成热载流子效应（HCE）的激活金属氧化物半导体场效应晶体管（MOSFET）。