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公开(公告)号：US11011660B1
公开(公告)日：2021-05-18
申请号：US16037378
申请日：2018-07-17
IPC分类号： H01L31/0687 , H01L31/0224 , H01L31/0304 , H01L31/18 , H01L31/0693
摘要： A method of manufacturing an inverted metamorphic multijunction solar cell by providing a growth semiconductor substrate with a top surface having a doping in the range of 1×1018 to 1×1020 charge carriers/cm3; depositing a window layer for a top (light facing) subcell subsequently to be formed directly on the top surface of the growth substrate; depositing a sequence of layers of semiconductor material forming a solar cell directly on the window layer; providing a surrogate substrate on the top surface of the sequence of layers of semiconductor material, and removing a portion of the semiconductor substrate so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 μm to 10 μm, remains.
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公开(公告)号：US11658255B1
公开(公告)日：2023-05-23
申请号：US17094110
申请日：2020-11-10
IPC分类号： H01L31/0687 , H01L31/18 , H01L31/0304 , H01L31/0224 , H01L31/0693
CPC分类号： H01L31/06875 , H01L31/022425 , H01L31/03046 , H01L31/03048 , H01L31/0693 , H01L31/1844 , H01L31/1848 , H01L31/1892
摘要： A metamorphic multijunction solar cell having a growth semiconductor substrate with a top surface having a doping in the range of 1x1018 to 1x1020 charge carriers/cm3; a window layer for a top (light facing) subcell formed directly on the top surface of the growth substrate; a sequence of layers of semiconductor material forming a solar cell directly on the window layer; a surrogate substrate on the top surface of the sequence of layers of semiconductor material, wherein a portion of the semiconductor substrate is removed so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 μm to 10 μm, remains.
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公开(公告)号：US20220238747A1
公开(公告)日：2022-07-28
申请号：US17161351
申请日：2021-01-28
IPC分类号： H01L31/18 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/054
摘要： A method of manufacturing a solar cell comprising: providing a growth substrate depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming at least a first and second solar subcells depositing a semiconductor contact layer on top of the second solar subcell depositing a reflective metal layer over said semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm depositing a contact metal layer composed on said reflective metal layer mounting and bonding a supporting substrate on top of the contact metal layer and removing the growth substrate.
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公开(公告)号：US11742452B2
公开(公告)日：2023-08-29
申请号：US17717621
申请日：2022-04-11
IPC分类号： H01L31/054 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/18
CPC分类号： H01L31/1844 , H01L31/0543 , H01L31/0547 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/1892
摘要： A solar cell comprising an epitaxial sequence of layers of semiconductor material thrilling at least a first and second solar subcells; a semiconductor contact layer disposed on the bottom surface of the second solar subcell; a reflective metal layer disposed below the semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm, for reflecting light back into the second solar subcell.
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公开(公告)号：US20220254948A1
公开(公告)日：2022-08-11
申请号：US17717621
申请日：2022-04-11
IPC分类号： H01L31/18 , H01L31/054 , H01L31/0735 , H01L31/0687 , H01L31/0725
摘要： A solar cell comprising an epitaxial sequence of layers of semiconductor material thrilling at least a first and second solar subcells; a semiconductor contact layer disposed on the bottom surface of the second solar subcell; a reflective metal layer disposed below the semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm, for reflecting light back into the second solar subcell.
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