公开(公告)号：US10586822B2

公开(公告)日：2020-03-10

申请号：US15858803

申请日：2017-12-29

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H01L27/146 ,  H01L23/00 ,  H04N5/335 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/374

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

公开(公告)号：US20180122847A1

公开(公告)日：2018-05-03

申请号：US15858803

申请日：2017-12-29

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H01L27/146 ,  H04N5/3745 ,  H01L23/00 ,  H04N5/374 ,  H04N5/335

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/379 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

公开(公告)号：US20150155325A1

公开(公告)日：2015-06-04

申请号：US14615253

申请日：2015-02-05

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/379 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。

公开(公告)号：US08988575B2

公开(公告)日：2015-03-24

申请号：US14109446

申请日：2013-12-17

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H01L23/00 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。

公开(公告)号：US20140104471A1

公开(公告)日：2014-04-17

申请号：US14109446

申请日：2013-12-17

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H04N5/374 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。