公开(公告)号：US20210320218A1

公开(公告)日：2021-10-14

申请号：US17250349

申请日：2019-07-04

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： TSUTOMU IMOTO ,  YUJI ISOGAI ,  TAKUYA MARUYAMA ,  TAKURO MURASE ,  RYOTA WATANABE

IPC分类号： H01L31/12 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/144 ,  H04N5/369 ,  G01S17/08 ,  G01S7/481

摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, a first substrate arranged between the on-chip lens and the wiring layer, and a second substrate bonded to the first substrate via the wiring layer, the first substrate includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the second substrate includes a plurality of pixel transistors that performs an operation of reading charges detected in the first and second charge detection portions. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

公开(公告)号：US20220390611A1

公开(公告)日：2022-12-08

申请号：US17755980

申请日：2020-10-08

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： TAKUYA MARUYAMA ,  YUSUKE OTAKE

IPC分类号： G01S17/931 ,  G01S17/08 ,  G01S17/89 ,  G01S7/4863

摘要： Provided is a light receiving element capable of lowering the on-voltage of a transfer transistor and suppressing transfer failures at a low on-voltage. The light receiving element includes a plurality of pixels arranged in a matrix, each of the plurality of pixels including: a photoelectric conversion unit; first and second charge storage units that store charges generated by the photoelectric conversion unit; first and second transfer transistors that transfer the charges from the photoelectric conversion unit to the first and second charge storage units, respectively; first and second amplification transistors that amplify potentials of the first and second charge storage units, respectively; and a connection wiring that electrically connects the first charge storage unit and the first amplification transistor, wherein a first transfer control wiring electrically connected to a gate of the first transfer transistor of each of the pixels in the same row extends in a row direction in a first wiring layer, and the connection wiring extends to the first wiring layer.

公开(公告)号：US20210270941A1

公开(公告)日：2021-09-02

申请号：US17250343

申请日：2019-07-04

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： RYOTA WATANABE ,  TOSHIFUMI WAKANO ,  TAKURO MURASE ,  TAKUYA MARUYAMA ,  TSUTOMU IMOTO ,  YUJI ISOGAI

IPC分类号： G01S7/481 ,  H01L31/02 ,  G01S7/4863

摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

公开(公告)号：US20200028017A1

公开(公告)日：2020-01-23

申请号：US16504875

申请日：2019-07-08

申请人： Sony Semiconductor Solutions Corporation

发明人： TSUTOMU IMOTO ,  YUJI ISOGAI ,  TAKUYA MARUYAMA ,  TAKURO MURASE ,  RYOTA WATANABE ,  TAKESHI YAMAZAKI

IPC分类号： H01L31/101 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/0224

摘要： A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.