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公开(公告)号：US20220037389A1
公开(公告)日：2022-02-03
申请号：US17501135
申请日：2021-10-14
IPC分类号： H01L27/146 , H04N5/359 , H04N5/369
摘要： The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
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公开(公告)号：US20240121529A1
公开(公告)日：2024-04-11
申请号：US18544833
申请日：2023-12-19
IPC分类号： H04N25/704 , H01L27/146 , H04N25/711 , H04N25/772
CPC分类号： H04N25/704 , H01L27/14609 , H04N25/711 , H04N25/772
摘要： To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.
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公开(公告)号：US20170358614A1
公开(公告)日：2017-12-14
申请号：US15541105
申请日：2016-01-08
发明人： KENJI AZAMI , YUSUKE OTAKE , TOSHIFUMI WAKANO
IPC分类号： H01L27/146 , H04N5/369 , H04N9/07 , H01L27/15
CPC分类号： H01L27/14605 , H01L27/14 , H01L27/146 , H01L27/1461 , H01L27/14621 , H01L27/1463 , H01L27/14689 , H01L27/156 , H04N5/369 , H04N5/378 , H04N9/045 , H04N9/07 , H04N2209/045
摘要： The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus. In a pixel array unit, pixels are two-dimensionally arranged, and the pixels are formed with a combination of: a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit, the light of the third color component having passed through a first color filter and the first photoelectric conversion unit, the first color filter being designed to pass light of a second color component; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a fifth color component with a second photoelectric conversion unit, the light of the fifth color component having passed through a second color filter and the first photoelectric conversion unit, the second color filter being designed to pass light of a fourth color component; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a sixth color component with a second photoelectric conversion unit, the light of the sixth color component having passed through the first photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).
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公开(公告)号：US20230067160A1
公开(公告)日：2023-03-02
申请号：US18053733
申请日：2022-11-08
IPC分类号： H04N5/369 , H01L27/146 , H04N5/372 , H04N5/3745
摘要： To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.
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公开(公告)号：US20210280622A1
公开(公告)日：2021-09-09
申请号：US17252810
申请日：2019-06-07
发明人： HIDENORI MAEDA , TOSHIFUMI WAKANO , YUSUKE OTAKE
IPC分类号： H01L27/146 , H01L31/107
摘要： Providing a SPAD photodiode that accurately captures a subject regardless of long distance or short distance. A solid-state imaging apparatus (1000) according to the present disclosure includes: a pixel isolator (100) that defines a photoelectric conversion region (200) for each pixel; a first semiconductor layer (106) provided in the photoelectric conversion region; and a second semiconductor layer (108) to which a voltage for electron multiplication is applied, specifically between the first semiconductor layer and the second semiconductor layer, in which the sensitivities of the plurality of pixels are varied. With this configuration, it is possible to accurately capture a subject in the SPAD photodiode regardless of long distance or short distance.
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公开(公告)号：US20190051686A1
公开(公告)日：2019-02-14
申请号：US16152040
申请日：2018-10-04
发明人： KENJI AZAMI , YUSUKE OTAKE , TOSHIFUMI WAKANO
CPC分类号： H01L27/14605 , H01L27/14 , H01L27/146 , H01L27/1461 , H01L27/14621 , H01L27/1463 , H01L27/14689 , H01L27/156 , H04N5/369 , H04N5/378 , H04N9/045 , H04N9/07 , H04N2209/045
摘要： The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).
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公开(公告)号：US20180240834A1
公开(公告)日：2018-08-23
申请号：US15556902
申请日：2016-03-17
IPC分类号： H01L27/146 , H04N5/359
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14612 , H01L27/14634 , H01L27/14641 , H01L27/14683 , H01L27/1469 , H04N5/359 , H04N5/374 , H04N5/378 , H04N5/379
摘要： The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
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公开(公告)号：US20220149103A1
公开(公告)日：2022-05-12
申请号：US17530046
申请日：2021-11-18
IPC分类号： H01L27/146 , H04N5/359 , H04N5/369
摘要： Provided are a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
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公开(公告)号：US20210270941A1
公开(公告)日：2021-09-02
申请号：US17250343
申请日：2019-07-04
发明人： RYOTA WATANABE , TOSHIFUMI WAKANO , TAKURO MURASE , TAKUYA MARUYAMA , TSUTOMU IMOTO , YUJI ISOGAI
IPC分类号： G01S7/481 , H01L31/02 , G01S7/4863
摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号：US20210144321A1
公开(公告)日：2021-05-13
申请号：US17250308
申请日：2019-07-08
IPC分类号： H04N5/369 , H04N5/3745 , H01L27/146 , H04N5/372
摘要： To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.
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