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公开(公告)号：US20230049306A1
公开(公告)日：2023-02-16
申请号：US17758580
申请日：2021-01-13
发明人： TSUTOMU IMOTO
IPC分类号： H01L27/146
摘要： A light receiving element according to the present disclosure includes a sensor substrate (102) and a circuit board (101). The sensor substrate (102) is provided with a light receiving region (103), a pair of voltage application electrodes, and an incident surface electrode (104). The light receiving region (103) photoelectrically converts incident light into signal charges. A voltage is alternately applied to the pair of voltage application electrodes to generate, in the light receiving region (103), an electric field that time-divides the signal charges and distributes the signal charges to a pair of charge accumulation electrodes. The incident surface electrode (104) is provided on an incident surface of light in the light receiving region (103), and a voltage equal to or lower than a ground potential is applied to the incident surface electrode. The circuit board (101) is provided on a surface facing the incident surface of the light, of the sensor substrate (102). The circuit board (101) is provided with a pixel transistor that processes the signal charges accumulated in the charge accumulation electrodes.
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公开(公告)号：US20210320218A1
公开(公告)日：2021-10-14
申请号：US17250349
申请日：2019-07-04
发明人： TSUTOMU IMOTO , YUJI ISOGAI , TAKUYA MARUYAMA , TAKURO MURASE , RYOTA WATANABE
IPC分类号： H01L31/12 , H01L31/0232 , H01L31/02 , H01L27/144 , H04N5/369 , G01S17/08 , G01S7/481
摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, a first substrate arranged between the on-chip lens and the wiring layer, and a second substrate bonded to the first substrate via the wiring layer, the first substrate includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the second substrate includes a plurality of pixel transistors that performs an operation of reading charges detected in the first and second charge detection portions. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号：US20210270941A1
公开(公告)日：2021-09-02
申请号：US17250343
申请日：2019-07-04
发明人： RYOTA WATANABE , TOSHIFUMI WAKANO , TAKURO MURASE , TAKUYA MARUYAMA , TSUTOMU IMOTO , YUJI ISOGAI
IPC分类号： G01S7/481 , H01L31/02 , G01S7/4863
摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号：US20200028017A1
公开(公告)日：2020-01-23
申请号：US16504875
申请日：2019-07-08
发明人： TSUTOMU IMOTO , YUJI ISOGAI , TAKUYA MARUYAMA , TAKURO MURASE , RYOTA WATANABE , TAKESHI YAMAZAKI
IPC分类号： H01L31/101 , H01L31/0232 , H01L31/02 , H01L31/0224
摘要： A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.
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公开(公告)号：US20230061837A1
公开(公告)日：2023-03-02
申请号：US17759953
申请日：2021-01-06
发明人： TSUTOMU IMOTO , MASAHIRO HOSOYA , YUSUKE OTAKE
IPC分类号： H01L27/146 , G01S17/10 , G01S7/4865 , H01L23/00
摘要： A sensor device according to the present technology includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed, and each of the first wire, the second wire, and the third wire is formed by bonding a first portion formed in the first wire formation layer and extending in a first direction and a second portion formed in the second wire formation layer and extending in the first direction.
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