公开(公告)号：US20050220933A1

公开(公告)日：2005-10-06

申请号：US11091492

申请日：2005-03-29

申请人： Soon Hong ,  Gyu Cho ,  Yong Seo ,  Seung Han ,  Jae Yu ,  Hyun Kim

发明人： Soon Hong ,  Gyu Cho ,  Yong Seo ,  Seung Han ,  Jae Yu ,  Hyun Kim

IPC分类号： A23K1/00 ,  A23K1/16 ,  A01K1/00

CPC分类号： A23K20/142 ,  A23K10/12 ,  A23K40/10 ,  A23K40/30 ,  Y10S426/807

摘要： Provided are a method for preparing a granular animal feed additive and the granular animal feed additive prepared by the method. The method includes: filtering, with a membrane filter, a fermentation broth obtained from a lysine producing microorganism cultured in a lysine producing condition to obtain a lysine-containing filtrate and a microorganism-containing sludge; drying the filtrate to obtain a concentrate with a total solid content of 48 to 52 wt %; granule-drying the concentrate at a temperature of 50° C. to 60° C. to obtain granules; and coating the granules with a coating agent containing one or more selected from the group consisting of the sludge, a diluent or a free lysine as a lysine content adjustor, and a moisture prevention agent, to obtain lysine granules having the following properties: Lysine content (lysine sulfate)65% or more Grain size  300-1,200 μm, 90% or more Apparent density  620-720 kg/m3 Protein content   10-15% Total sugar content >0-1% Inorganic material content >0-3% Water content >0-3% Carboxylic acid content >0-8% SO4− ion content   20-25%

公开(公告)号：US20070281477A1

公开(公告)日：2007-12-06

申请号：US11445709

申请日：2006-06-02

申请人： Kyeong-Tae Lee ,  Jinhan Choi ,  Bi Jang ,  Shashank Deshmukh ,  Meihua Shen ,  Thorsten Lill ,  Jae Yu

发明人： Kyeong-Tae Lee ,  Jinhan Choi ,  Bi Jang ,  Shashank Deshmukh ,  Meihua Shen ,  Thorsten Lill ,  Jae Yu

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/32136 ,  H01L21/28273 ,  H01L21/32137

摘要： A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.

摘要翻译： 在多晶硅上等离子体蚀刻钨硅化物的方法，特别可用于制造具有密集填充区域和开放（iso）区域的闪存，其需要由于微负载而长时间过蚀刻。 在过蚀刻中晶片偏置减小。 主要的蚀刻剂包括NF 3和Cl 2。 加入氩气以防止在密/异界面处的底切。 氧和氮氧化任何暴露的硅以提高蚀刻选择性并矫正蚀刻轮廓。 可以加入SiCl 4 4以获得额外的选择性。

公开(公告)号：US20070148858A1

公开(公告)日：2007-06-28

申请号：US11479287

申请日：2006-06-29

申请人： Jae Yu ,  Jong-Kuk Kim

发明人： Jae Yu ,  Jong-Kuk Kim

IPC分类号： H01L21/8242 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/76829 ,  H01L27/10894 ,  H01L28/91

摘要： A method for forming a metal contact in a semiconductor device includes forming bit lines over a substrate defined into a cell region and a peripheral region, forming a first inter-layer dielectric (ILD) layer over the bit lines, forming a first etch stop layer over the first ILD layer, forming a capacitor in the cell region, forming a second etch stop layer over the substrate after the capacitor is formed, forming a second ILD layer over the second etch stop layer, performing a first etching process to etch portions of the second ILD layer and the second etch stop layer to thereby form first metal contact holes exposing the first etch stop layer, and performing a second etching process to etch portions of the first etch stop layer and the first ILD layer to thereby form second metal contact holes exposing the bit lines.

摘要翻译： 一种用于在半导体器件中形成金属接触的方法包括在限定在单元区域和周边区域中的衬底上形成位线，在位线之上形成第一层间电介质（ILD）层，形成第一蚀刻停止层 在第一ILD层上，在单元区域中形成电容器，在形成电容器之后在衬底上形成第二蚀刻停止层，在第二蚀刻停止层上形成第二ILD层，执行第一蚀刻工艺以蚀刻部分 第二ILD层和第二蚀刻停止层，从而形成暴露第一蚀刻停止层的第一金属接触孔，以及执行第二蚀刻工艺以蚀刻第一蚀刻停止层和第一ILD层的部分，从而形成第二金属接触 孔露出位线。

公开(公告)号：US20070023603A1

公开(公告)日：2007-02-01

申请号：US11195141

申请日：2005-08-01

申请人： Sung Oh ,  Won Kang ,  Ja Goo ,  Gyu Kim ,  Hang Yeo ,  Jae Yu

发明人： Sung Oh ,  Won Kang ,  Ja Goo ,  Gyu Kim ,  Hang Yeo ,  Jae Yu

IPC分类号： A47G29/00

CPC分类号： F16M13/027 ,  F16M11/126 ,  F16M11/18 ,  F16M11/2092 ,  F16M2200/061

摘要： A mounting system is adapted to couple to the back side of a flat panel monitor to adjust the viewing angle of the monitor. The mounting system includes a plurality of motorized arms that are communicably link to a processor. Based on an input signal from a remote control, the processor extends or retracts each of the plurality of motorized arms to adjust the viewing angle of the monitor.

摘要翻译： 安装系统适于联接到平板监视器的背面以调节监视器的视角。 安装系统包括可通信地链接到处理器的多个机动臂。 基于来自遥控器的输入信号，处理器延伸或缩回多个机动臂中的每一个以调节监视器的视角。

公开(公告)号：US20060284182A1

公开(公告)日：2006-12-21

申请号：US11455707

申请日：2006-06-20

申请人： Jin Yoon ,  Jae Yu

发明人： Jin Yoon ,  Jae Yu

IPC分类号： H01L29/04

CPC分类号： H01L29/04 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78672

摘要： A liquid crystal display device includes first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries, and a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.