公开(公告)号：US5856690A

公开(公告)日：1999-01-05

申请号：US763550

申请日：1996-12-10

申请人： Stanley G. Burns ,  Carl Gruber ,  Howard R. Shanks ,  Allan P. Constant ,  Allen R. Landin ,  David H. Schmidt

发明人： Stanley G. Burns ,  Carl Gruber ,  Howard R. Shanks ,  Allan P. Constant ,  Allen R. Landin ,  David H. Schmidt

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L29/788

CPC分类号： H01L29/66825 ,  H01L21/28158 ,  H01L29/4908 ,  H01L29/511 ,  H01L29/7881

摘要： A thin film floating gate transistor with improved dielectric structure. The dielectric structure serves the purpose of encapsulating the floating gate and also interfacing with the semiconductor material, .alpha.-Si:H. It thus must meet a variety of requirements. In order to provide long memory retention times, the dielectric material, at least in the regions encapsulating the floating gate, must have a high resistivity, on the order of 10.sup.17 ohm-cm or better. Silicon dioxide is the preferred material for encapsulating the floating gate. However, since silicon dioxide creates a high density of defect state when interfaced with the .alpha.-Si:H layer. An interface layer, substantially free of oxide, is interposed between the high resistivity layer and the .alpha.-Si:H. Preferably, the interface portion of the dielectric layer is silicon nitride. In some cases, it is desirable to replace the entire dielectric structure, or at least the interface layer with aluminum nitride.

摘要翻译： 具有改善电介质结构的薄膜浮栅晶体管。 电介质结构用于封装浮动栅极并且还与半导体材料α-Si：H接合。 因此必须满足各种要求。 为了提供长的记忆保留时间，介电材料至少在封装浮动栅极的区域中必须具有大约1017欧姆 - 厘米或更高的高电阻率。 二氧化硅是用于封装浮动栅极的优选材料。 然而，由于当与α-Si层形成界面时，二氧化硅产生高密度缺陷状态。 基本上不含氧化物的界面层介于高电阻率层和α-Si：H之间。 优选地，电介质层的界面部分是氮化硅。 在一些情况下，期望用氮化铝代替整个电介质结构，或至少替代界面层。