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    Plasma etch reactor and method
    1.
    发明申请
    Plasma etch reactor and method 有权
    等离子体蚀刻反应器和方法

    公开(公告)号：US20050164513A1

    公开(公告)日：2005-07-28

    申请号：US11087540

    申请日：2005-03-23

    申请人： Stephen DeOrnellas ,  Leslie Jerde ,  Alferd Cofer ,  Robert Vail ,  Kurt Olson

    发明人： Stephen DeOrnellas ,  Leslie Jerde ,  Alferd Cofer ,  Robert Vail ,  Kurt Olson

    IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/02071 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32587 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60

    摘要： A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40. A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48. The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20, which range can be selected by adjusting more of the power supplies 30, 32.

    摘要翻译： 等离子体蚀刻反应器20包括上电极24，下电极24，设置在其间的外围环电极26。 上电极24接地，外围电极26由高频交流电源供电，而下电极28由低频交流电源供电以及直流电源。 反应器室22配置有气态物质的固体源50和突出的挡板40。 喷嘴36提供工艺气体的喷射流，以确保半导体晶片48表面处理气体的均匀性。 等离子体蚀刻反应器20的配置增强了反应器20中的等离子体的密度范围，该范围可以通过调节更多的电源30,32来选择。