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    CRYSTALLIZATION METHODS
    2.
    发明申请
    CRYSTALLIZATION METHODS 有权
    结晶方法

    公开(公告)号：US20130055731A1

    公开(公告)日：2013-03-07

    申请号：US13601069

    申请日：2012-08-31

    申请人： Bruce E. Adams ,  Aaron Muir Hunter ,  Stephen Moffatt

    发明人： Bruce E. Adams ,  Aaron Muir Hunter ,  Stephen Moffatt

    IPC分类号： F25D31/00

    CPC分类号： H01L21/02686 ,  H01L21/02521 ,  H01L21/268

    摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

    摘要翻译： 描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。 使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。 然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。 选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

    METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD
    4.
    发明申请
    METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD 有权
    使用脉冲火焰退火方法的薄膜固相重组方法

    公开(公告)号：US20110065264A1

    公开(公告)日：2011-03-17

    申请号：US12764723

    申请日：2010-04-21

    申请人： STEPHEN MOFFATT ,  Aaron Muir Hunter ,  Bruce E. Adams

    发明人： STEPHEN MOFFATT ,  Aaron Muir Hunter ,  Bruce E. Adams

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02686 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02521

    摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.

    摘要翻译： 本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。 在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域 使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

    Methods for crystallizing a substrate using energy pulses and freeze periods
    9.
    发明授权
    Methods for crystallizing a substrate using energy pulses and freeze periods 有权
    使用能量脉冲和冷冻时间结晶基板的方法

    公开(公告)号：US09373511B2

    公开(公告)日：2016-06-21

    申请号：US13601069

    申请日：2012-08-31

    申请人： Bruce E. Adams ,  Aaron Muir Hunter ,  Stephen Moffatt

    发明人： Bruce E. Adams ,  Aaron Muir Hunter ,  Stephen Moffatt

    IPC分类号： C30B1/02 ,  H01L21/268 ,  H01L21/02

    CPC分类号： H01L21/02686 ,  H01L21/02521 ,  H01L21/268

    摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

    摘要翻译： 描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。 使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。 然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。 选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。