METHOD FOR FORMING FREE STANDING MICROSTRUCTURES
    3.
    发明申请
    METHOD FOR FORMING FREE STANDING MICROSTRUCTURES 审中-公开
    形成自由定位微结构的方法

    公开(公告)号:US20060273065A1

    公开(公告)日:2006-12-07

    申请号:US11421715

    申请日:2006-06-01

    IPC分类号: C23F1/00

    摘要: A method of forming free standing microstructures includes providing a substrate and forming a sacrificial layer on the substrate. A thin-film structural layer is then formed around and over the sacrificial layer. The sacrificial layer may be formed from an electrically conductive or non-electrically conductive material in certain embodiments of the invention. Nanometer-scale pores are then introduced through the thin-film structural layer by a non-lithographic method, such as anodic etching. Via the pores, at least a portion of the sacrificial layer is etched away or otherwise removed from underneath the thin-film structural layer. The free standing microstructures may be sealed by application of a sealing layer on top thereof. The microstructure may form an encapsulating cavity and provide integrated on-wafer packaging if separate microdevices are disposed inside the cavity. The entire process may be done at or near room temperature in some cases.

    摘要翻译: 形成自由立体微结构的方法包括提供衬底并在衬底上形成牺牲层。 然后在牺牲层周围形成薄膜结构层。 在本发明的某些实施例中,牺牲层可以由导电或非导电材料形成。 然后通过非平版印刷法,例如阳极蚀刻,通过薄膜结构层引入纳米级的孔。 通过孔,牺牲层的至少一部分被蚀刻掉或以其它方式从薄膜结构层下方移除。 可以通过在其顶部施加密封层来密封自立式微结构。 如果单独的微型器件设置在空腔内,则微结构可以形成封装空腔并提供集成的晶片封装。 在某些情况下,整个过程可以在室温或室温附近完成。