SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF
    5.
    发明申请
    SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF 审中-公开
    外部提升关闭后的重复使用的防腐蚀层

    公开(公告)号:US20130043214A1

    公开(公告)日:2013-02-21

    申请号:US13536267

    申请日:2012-06-28

    IPC分类号: B32B15/04 B44C1/22

    摘要: There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.

    摘要翻译: 公开了一种生长结构,其包括生长衬底,牺牲层,缓冲层,至少三个衬底保护层,至少一个外延层,至少一个接触层,以及涂覆有金属或合金的主体衬底。 在一个实施例中,该装置还包括至少三个装置结构保护层。 牺牲层可以位于生长衬底和至少一个外延层之间,其中至少三个衬底保护层位于生长衬底和牺牲层之间,并且至少三个器件结构保护层位于牺牲层之间 层和外延层。 还公开了通过蚀刻牺牲层和保护层来释放细胞结构来保持生长基质的完整性的方法。