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1.发明申请METHODS OF PREPARING FLEXIBLE PHOTOVOLTAIC DEVICES USING EPITAXIAL LIFTOFF, AND PRESERVING THE INTEGRITY OF GROWTH SUBSTRATES USED IN EPITAXIAL GROWTH 有权使用外延起绒制备柔性光伏器件的方法，并保持外延生长中使用的生长基质的一致性公开(公告)号：US20110186910A1
公开(公告)日：2011-08-04
申请号：US12878261
申请日：2010-09-09
IPC分类号： H01L29/06 , H01L21/302 , H01L31/0352
CPC分类号： H01L31/1892 , H01L21/7813 , H01L31/0735 , H01L31/1852 , H01L31/1896 , Y02E10/544
摘要： There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
摘要翻译： 公开了通过使用外延剥离来制造诸如柔性光伏（PV）器件的光敏器件的方法。 本文还描述了制备包含具有生长衬底的结构的柔性PV器件的方法，其中保护层的选择性蚀刻产生了适合于再利用的平滑生长衬底。
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公开(公告)号：US08378385B2
公开(公告)日：2013-02-19
申请号：US12878261
申请日：2010-09-09
IPC分类号： H01L29/06 , H01L21/302 , H01L31/0352
CPC分类号： H01L31/1892 , H01L21/7813 , H01L31/0735 , H01L31/1852 , H01L31/1896 , Y02E10/544
摘要： There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
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3.发明申请SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF 审中-公开外部提升关闭后的重复使用的防腐蚀层公开(公告)号：US20130043214A1
公开(公告)日：2013-02-21
申请号：US13536267
申请日：2012-06-28
CPC分类号： H01L31/1896 , Y02E10/50 , Y10T428/31678
摘要： There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.
摘要翻译： 公开了一种生长结构，其包括生长衬底，牺牲层，缓冲层，至少三个衬底保护层，至少一个外延层，至少一个接触层，以及涂覆有金属或合金的主体衬底。 在一个实施例中，该装置还包括至少三个装置结构保护层。 牺牲层可以位于生长衬底和至少一个外延层之间，其中至少三个衬底保护层位于生长衬底和牺牲层之间，并且至少三个器件结构保护层位于牺牲层之间 层和外延层。 还公开了通过蚀刻牺牲层和保护层来释放细胞结构来保持生长基质的完整性的方法。
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公开(公告)号：US20090095349A1
公开(公告)日：2009-04-16
申请号：US11869954
申请日：2007-10-10
申请人： Stephen R. Forrest , Guodan Wei , Kuen-Ting Shiu
发明人： Stephen R. Forrest , Guodan Wei , Kuen-Ting Shiu
IPC分类号： H01L31/0264 , H01L21/04
CPC分类号： B82Y30/00 , H01L31/03046 , H01L31/035281 , H01L31/0735 , Y02E10/544 , Y10S977/932 , Y10S977/948
摘要： A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.
摘要翻译： 一种器件包括半导体材料的多个栅栏层和第二半导体材料的量子点的多个交替层，该第二半导体材料的第二半导体材料的交替层被嵌入在与p型和n型之间的堆叠中的第三半导体材料之间并直接接触 半导体材料。 第二半导体材料的每个量子点和第三半导体材料形成具有II型带对准的异质结。 还提供了一种用于制造这种装置的方法。
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公开(公告)号：US07915521B2
公开(公告)日：2011-03-29
申请号：US11869954
申请日：2007-10-10
申请人： Stephen R. Forrest , Guodan Wei , Kuen-Ting Shiu
发明人： Stephen R. Forrest , Guodan Wei , Kuen-Ting Shiu
IPC分类号： H01L31/042 , H01L31/00 , H01L21/00
CPC分类号： B82Y30/00 , H01L31/03046 , H01L31/035281 , H01L31/0735 , Y02E10/544 , Y10S977/932 , Y10S977/948
摘要： A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.
摘要翻译： 一种器件包括半导体材料的多个栅栏层和第二半导体材料的量子点的多个交替层，该第二半导体材料的第二半导体材料的交替层被嵌入在与p型和n型之间的堆叠中的第三半导体材料之间并直接接触 半导体材料。 第二半导体材料的每个量子点和第三半导体材料形成具有II型带对准的异质结。 还提供了一种用于制造这种装置的方法。
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公开(公告)号：US07343061B2
公开(公告)日：2008-03-11
申请号：US11274873
申请日：2005-11-15
CPC分类号： G02B6/12004 , G02B6/1228 , G02B2006/12083 , G02B2006/12133 , H01L31/02327 , H01S5/026 , H01S5/0264 , H01S5/1014 , H01S5/1032 , H01S5/1064 , H01S5/3213 , H01S5/50
摘要： An asymmetric twin waveguide (ATG) structure with an integrated amplifier and detector fabricated in a single active waveguide layer is disclosed. The structure comprises an active waveguide layer formed on a passive waveguide layer. The active and passive waveguides have different effective indices of refraction such that a first mode of light is confined primarily to the active waveguide and a second mode of light is confined primarily to the passive waveguide in the area where the waveguides overlap.
摘要翻译： 公开了在单个有源波导层中制造的具有集成放大器和检测器的不对称双波导（ATG）结构。 该结构包括形成在无源波导层上的有源波导层。 有源和无源波导具有不同的有效折射率，使得第一模式主要被限制在有源波导上，并且第二光模式主要被限制在波导重叠的区域中的无源波导。
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7.发明申请PHOTOACTIVE DEVICES INCLUDING PORPHYRINOIDS WITH COORDINATING ADDITIVES 有权包括具有协调添加剂的PORPHYRINOID的光学器件公开(公告)号：US20150048314A1
公开(公告)日：2015-02-19
申请号：US13271993
申请日：2011-10-12
申请人： Stephen R. Forrest , Jeramy Zimmerman , Eric K. Yu , Mark E. Thompson , Cong Trinh , Matthew Whited , Viacheslav Diev
发明人： Stephen R. Forrest , Jeramy Zimmerman , Eric K. Yu , Mark E. Thompson , Cong Trinh , Matthew Whited , Viacheslav Diev
CPC分类号： H01L51/0092 , B82Y10/00 , H01L51/0003 , H01L51/001 , H01L51/0046 , H01L51/0047 , H01L51/0077 , H01L51/0078 , H01L51/009 , H01L51/424 , H01L51/4253 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： Coordinating additives are included in porphyrinoid-based materials to promote intermolecular organization and improve one or more photoelectric characteristics of the materials. The coordinating additives are selected from fullerene compounds and organic compounds having free electron pairs. Combinations of different coordinating additives can be used to tailor the characteristic properties of such porphyrinoid-based materials, including porphyrin oligomers. Bidentate ligands are one type of coordinating additive that can form coordination bonds with a central metal ion of two different porphyrinoid compounds to promote porphyrinoid alignment and/or pi-stacking. The coordinating additives can shift the absorption spectrum of a photoactive material toward higher wavelengths, increase the external quantum efficiency of the material, or both.
摘要翻译： 配合添加剂包括在卟啉类材料中，以促进分子间组织，改善材料的一种或多种光电特性。 配位添加剂选自具有自由电子对的富勒烯化合物和有机化合物。 可以使用不同配位添加剂的组合来定制这种卟啉类物质的特征，包括卟啉低聚物。 二齿配体是可以与两种不同卟啉类化合物的中心金属离子形成配位键的一种配位添加剂，以促进卟啉类比对和/或π-叠层。 配位添加剂可将光活性材料的吸收光谱向较高波长移动，提高材料的外部量子效率，或两者兼有。
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8.发明授权公开(公告)号：US09029837B2
公开(公告)日：2015-05-12
申请号：US13271993
申请日：2011-10-12
申请人： Stephen R. Forrest , Jeramy Zimmerman , Eric K. Yu , Mark E. Thompson , Cong Trinh , Matthew Whited , Vlacheslav Diev
发明人： Stephen R. Forrest , Jeramy Zimmerman , Eric K. Yu , Mark E. Thompson , Cong Trinh , Matthew Whited , Vlacheslav Diev
CPC分类号： H01L51/0092 , B82Y10/00 , H01L51/0003 , H01L51/001 , H01L51/0046 , H01L51/0047 , H01L51/0077 , H01L51/0078 , H01L51/009 , H01L51/424 , H01L51/4253 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： Coordinating additives are included in porphyrinoid-based materials to promote intermolecular organization and improve one or more photoelectric characteristics of the materials. The coordinating additives are selected from fullerene compounds and organic compounds having free electron pairs. Combinations of different coordinating additives can be used to tailor the characteristic properties of such porphyrinoid-based materials, including porphyrin oligomers. Bidentate ligands are one type of coordinating additive that can form coordination bonds with a central metal ion of two different porphyrinoid compounds to promote porphyrinoid alignment and/or pi-stacking. The coordinating additives can shift the absorption spectrum of a photoactive material toward higher wavelengths, increase the external quantum efficiency of the material, or both.
摘要翻译： 配合添加剂包括在卟啉类材料中，以促进分子间组织，改善材料的一种或多种光电特性。 配位添加剂选自具有自由电子对的富勒烯化合物和有机化合物。 可以使用不同配位添加剂的组合来定制这种卟啉类物质的特征，包括卟啉低聚物。 二齿配体是可以与两种不同卟啉类化合物的中心金属离子形成配位键的一种配位添加剂，以促进卟啉类比对和/或π-叠层。 配位添加剂可将光活性材料的吸收光谱向较高波长移动，提高材料的外部量子效率，或两者兼有。
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公开(公告)号：US09793481B2
公开(公告)日：2017-10-17
申请号：US12331062
申请日：2008-12-09
申请人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
发明人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
IPC分类号： H01L51/00
CPC分类号： H01L51/0021
摘要： A method is provided. A first layer is provided over a substrate, the first layer comprising a first material. A patterned second layer is applied over the first layer via stamping. The second layer comprising a second material. The second layer covers a first portion of the first layer, and does not cover a second portion of the first layer. The second portion of the first layer is removed via a subtractive process while the first portion of the first layer is protected from removal by the patterned second layer.
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公开(公告)号：US09496315B2
公开(公告)日：2016-11-15
申请号：US12859496
申请日：2010-08-19
IPC分类号： H01L51/44 , H01L27/30 , B82Y10/00 , H01L27/28 , H01L51/10 , H01L51/00 , H01L51/05 , H01L51/42
CPC分类号： H01L27/307 , B82Y10/00 , H01L27/283 , H01L51/0046 , H01L51/0078 , H01L51/0541 , H01L51/105 , H01L51/424
摘要： Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.
摘要翻译： 提供了顶栅，底接触有机薄膜晶体管。 晶体管可以包括金属双层电极，以帮助器件内的电荷移动。 在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔 沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。
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