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    Doped Semiconductor Nanocrystal Layers And Preparation Thereof
    1.
    发明申请
    Doped Semiconductor Nanocrystal Layers And Preparation Thereof 审中-公开
    掺杂半导体纳米晶体层及其制备方法

    公开(公告)号：US20070012907A1

    公开(公告)日：2007-01-18

    申请号：US11533036

    申请日：2006-09-19

    Applicant: Steven Hill ,  Peter Mascher ,  Jacek Wojcik ,  Edward Irving

    Inventor： Steven Hill ,  Peter Mascher ,  Jacek Wojcik ,  Edward Irving

    IPC: H01L29/06

    CPC classification number: B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/77 ,  C09K11/7706 ,  H01S3/09403

    Abstract: The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.

    Abstract translation: 掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上 层。 本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。

    Carbon passivation in solid-state light emitters
    2.
    发明授权
    Carbon passivation in solid-state light emitters 有权
    固态发光体中的碳钝化

    公开(公告)号：US07679102B2

    公开(公告)日：2010-03-16

    申请号：US11642786

    申请日：2006-12-21

    Applicant: George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill ,  Peter Mascher ,  Jacek Wojcik

    Inventor： George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill ,  Peter Mascher ,  Jacek Wojcik

    IPC: H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

    CPC classification number: H05B33/145 ,  B82Y20/00 ,  H01L33/18 ,  H05B33/22

    Abstract: A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, as well as reliability and lifetime. The emission wavelengths from the nano-particles can be made to correspond to the quantization energy of the semiconductor nano-particles, which allows the entire visible range of the spectrum be covered. Ideally an engineered structure of alternating active and buffer material layers are disposed between AC or DC electrodes, which generate an electric field. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and are designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the nano-particles in the adjacent active layer at a sufficient excitation energy to emit light efficiently at a desired wavelength.

    Abstract translation: 固态发光器件包括一个或多个活性层，其包含主体基质中的半导体纳米颗粒， 硅纳米颗粒在二氧化硅或氮化硅中。 通过缩短衰减时间和增强发射光谱以及可靠性和寿命，在活性层中引入碳提供了很大的性能提高。 可以使来自纳米颗粒的发射波长对应于半导体纳米颗粒的量子化能量，这允许覆盖光谱的整个可见光范围。 理想地，交替的有源和缓冲材料层的工程结构设置在产生电场的AC或DC电极之间。 缓冲层由宽带隙半导体或电介质材料组成，并且被设计成沿所施加的电场的方向具有厚度，以确保通过其的电子通过其吸收足够的能量来激发相邻活性物质中的纳米颗粒 层以足够的激发能量以期望的波长有效发光。

    Carbon passivation in solid-state light emitters
    3.
    发明申请
    Carbon passivation in solid-state light emitters 有权
    固态发光体中的碳钝化

    公开(公告)号：US20070181906A1

    公开(公告)日：2007-08-09

    申请号：US11642786

    申请日：2006-12-21

    Applicant: George Chik ,  Thomas MacElwee ,  lain Calder ,  E. Hill ,  Peter Mascher ,  Jacek Wojcik

    Inventor： George Chik ,  Thomas MacElwee ,  lain Calder ,  E. Hill ,  Peter Mascher ,  Jacek Wojcik

    IPC: H01L33/00

    CPC classification number: H05B33/145 ,  B82Y20/00 ,  H01L33/18 ,  H05B33/22

    Abstract: A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, as well as reliability and lifetime. The emission wavelengths from the nano-particles can be made to correspond to the quantization energy of the semiconductor nano-particles, which allows the entire visible range of the spectrum be covered. Ideally an engineered structure of alternating active and buffer material layers are disposed between AC or DC electrodes, which generate an electric field. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and are designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the nano-particles in the adjacent active layer at a sufficient excitation energy to emit light efficiently at a desired wavelength.

    Abstract translation: 固态发光器件包括一个或多个活性层，其包含主体基质中的半导体纳米颗粒， 硅纳米颗粒在二氧化硅或氮化硅中。 通过缩短衰减时间和增强发射光谱以及可靠性和寿命，在活性层中引入碳提供了很大的性能提高。 可以使来自纳米颗粒的发射波长对应于半导体纳米颗粒的量子化能量，这允许覆盖光谱的整个可见光范围。 理想地，交替的有源和缓冲材料层的工程结构设置在产生电场的AC或DC电极之间。 缓冲层由宽带隙半导体或电介质材料组成，并且被设计成沿所施加的电场的方向具有厚度，以确保通过其的电子通过其吸收足够的能量来激发相邻活性物质中的纳米颗粒 层以足够的激发能量以期望的波长有效发光。

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